- 专利标题： Semiconductor devices and preparation methods thereof
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申请号： US17430856申请日： 2021-03-08
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公开(公告)号： US12132022B2公开(公告)日： 2024-10-29
- 发明人: Zengyan Fan
- 申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址： CN Hefei
- 专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址： CN Hefei
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 优先权： CN 2010279566.8 2020.04.10
- 国际申请： PCT/CN2021/079567 2021.03.08
- 国际公布： WO2021/203887A 2021.10.14
- 进入国家日期： 2021-08-13
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/31
摘要：
The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device comprises: a semiconductor substrate; a passivation layer, arranged on an upper surface of the semiconductor substrate; a protective layer, arranged on an upper surface of the passivation layer, a dummy opening being formed on the protective layer; and, a dummy bump, partially located in the dummy opening and closely attached to the protective layer.
公开/授权文献
- US20230054495A1 SEMICONDUCTOR DEVICES AND PREPARATION METHODS THEREOF 公开/授权日：2023-02-23
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