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公开(公告)号：US10411058B2
公开(公告)日：2019-09-10
申请号：US15849229
申请日：2017-12-20
发明人： Tsutomu Tange , Yukinobu Suzuki , Aiko Kato , Koji Hara , Takehito Okabe
IPC分类号： H01L27/146 , H01L21/768 , H01L29/78 , H01L29/08
摘要： A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.
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公开(公告)号：US09673253B2
公开(公告)日：2017-06-06
申请号：US15139569
申请日：2016-04-27
发明人： Koji Hara , Nobutaka Ukigaya , Takeshi Aoki , Yukinobu Suzuki
IPC分类号： H01L27/00 , H01L27/146
CPC分类号： H01L27/14698 , H01L27/14636 , H01L27/14643
摘要： A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.
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公开(公告)号：US20220115429A1
公开(公告)日：2022-04-14
申请号：US17558814
申请日：2021-12-22
发明人： Toshiyuki Ogawa , Sho Suzuki , Takehito Okabe , Mitsuhiro Yomori , Yukinobu Suzuki , Akihiro Kawano , Tsutomu Tange
IPC分类号： H01L27/146 , H04N5/369
摘要： Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
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4.发明申请PHOTOELECTRIC CONVERSION DEVICE, IMAGE PICKUP SYSTEM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权光电转换装置，图像拾取系统和制造光电转换装置的方法公开(公告)号：US20160353044A1
公开(公告)日：2016-12-01
申请号：US15165957
申请日：2016-05-26
发明人： Akihiro Kawano , Yukinobu Suzuki , Nobutaka Ukigaya , Takayasu Kanesada , Takeshi Aoki , Hiroshi Takakusagi
IPC分类号： H04N5/378 , H04N5/225 , H01L27/146
CPC分类号： H01L27/14632 , H01L27/14609 , H01L27/1462 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H04N5/369
摘要： A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.
摘要翻译： 光电转换装置具有设置在具有光电转换区域的硅层上的绝缘膜，绝缘膜具有与光电转换区域重叠的部分，设置在绝缘膜上的氧化硅膜，具有重叠部分的氧化硅膜 通过光电转换区域，设置在绝缘体膜和氧化硅膜之间的导电构件和设置在导电构件和氧化硅膜之间的氧化硅层，其中与氧化硅的光电转换区域重叠的部分 膜与与绝缘膜的光电转换区重叠的部分接触，氧化硅膜的氢浓度大于氧化硅层的氢浓度。
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公开(公告)号：US11488998B2
公开(公告)日：2022-11-01
申请号：US16853592
申请日：2020-04-20
IPC分类号： H01L27/146 , H01L23/00 , H01L23/48 , H01L23/532 , H01L23/485 , H01L23/522
摘要： A semiconductor apparatus configured to decrease occurrence of exfoliation between a conductor layer and an insulator layer is provided. A first region containing silicon and copper is disposed between a first conductor portion and a first insulator portion. A second region containing silicon and copper is disposed between a second conductor portion and a second insulator portion. The first region has a maximum nitrogen concentration higher than that of the second region.
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公开(公告)号：US11121160B2
公开(公告)日：2021-09-14
申请号：US16601888
申请日：2019-10-15
发明人： Sho Suzuki , Takehito Okabe , Mitsuhiro Yomori , Takuya Hara , Keita Torii , Yukinobu Suzuki , Tomoyuki Tezuka , Norihiko Nakata , Daichi Seto , Kenji Togo
IPC分类号： H01L27/146
摘要： Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.
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公开(公告)号：US20180182802A1
公开(公告)日：2018-06-28
申请号：US15849229
申请日：2017-12-20
发明人： Tsutomu Tange , Yukinobu Suzuki , Aiko Kato , Koji Hara , Takehito Okabe
IPC分类号： H01L27/146 , H01L23/522 , H01L23/532 , H01L21/768
CPC分类号： H01L27/14636 , H01L21/28518 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877 , H01L23/485 , H01L27/14612 , H01L27/14685 , H01L29/0847 , H01L29/78
摘要： A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.
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公开(公告)号：US09385262B2
公开(公告)日：2016-07-05
申请号：US14468166
申请日：2014-08-25
发明人： Yukinobu Suzuki
IPC分类号： H01L27/30 , H01L31/18 , H01L23/522 , H01L23/528 , H01L27/146
CPC分类号： H01L31/18 , H01L23/5226 , H01L23/5283 , H01L27/14636 , H01L27/14643 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device provided with an interlayer insulating film formed on a semiconductor substrate, and a plurality of wiring layers formed on the interlayer insulating film. The method includes forming of a first wiring layer closest to the semiconductor substrate among the plurality of wiring layers, and forming of an alloy of a titanium layer and a metal layer by heating treatment. The forming of the first wiring layer includes: forming of a titanium layer on an interlayer insulating film; forming of a metal layer containing a metal capable of forming an alloy with titanium in the titanium layer; forming of an orientation layer on the metal layer; and forming of an aluminum layer on the orientation layer.
摘要翻译： 一种制造半导体器件的方法，所述半导体器件设置有形成在半导体衬底上的层间绝缘膜，以及形成在所述层间绝缘膜上的多个布线层。 该方法包括在多个布线层中形成最靠近半导体衬底的第一布线层，以及通过加热处理形成钛层和金属层的合金。 第一布线层的形成包括：在层间绝缘膜上形成钛层; 在钛层中形成含有能够与钛形成合金的金属的金属层; 在金属层上形成取向层; 以及在取向层上形成铝层。
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公开(公告)号：US11682686B2
公开(公告)日：2023-06-20
申请号：US17558814
申请日：2021-12-22
发明人： Toshiyuki Ogawa , Sho Suzuki , Takehito Okabe , Mitsuhiro Yomori , Yukinobu Suzuki , Akihiro Kawano , Tsutomu Tange
IPC分类号： H01L27/146 , H04N5/369 , H04N25/70
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/14685 , H04N25/70 , H01L27/1464 , H01L27/1469 , H01L27/14634
摘要： Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
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公开(公告)号：US11244978B2
公开(公告)日：2022-02-08
申请号：US16600753
申请日：2019-10-14
发明人： Toshiyuki Ogawa , Sho Suzuki , Takehito Okabe , Mitsuhiro Yomori , Yukinobu Suzuki , Akihiro Kawano , Tsutomu Tange
IPC分类号： H01L27/146 , H04N5/369
摘要： Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
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