公开(公告)号：US11721711B2

公开(公告)日：2023-08-08

申请号：US16879016

申请日：2020-05-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takayasu Kanesada ,  Koji Hara

IPC: H01L27/146 ,  H04N25/772

CPC classification number: H01L27/14627 ,  H01L27/1464 ,  H01L27/14636 ,  H04N25/772

Abstract: A disclosed photoelectric conversion device includes: a semiconductor layer in which a photoelectric converter is provided; a substrate arranged on one face side of the semiconductor layer; and an interconnection structure arranged between the semiconductor layer and the substrate. The interconnection structure includes a first insulating film made of a first insulating material and a second insulating film provided on the semiconductor layer side of the first insulating film and made of a second insulating material, the first insulating material permeates more hydrogen than the second insulating material, an insulating member made of the first insulating material is located between the first insulating film and the semiconductor layer, and the first insulating film and the insulating member are connected to each other via an opening provided in the second insulating film.

公开(公告)号：US20160268332A1

公开(公告)日：2016-09-15

申请号：US15055949

申请日：2016-02-29

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takayasu Kanesada

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629

Abstract: A method for manufacturing a solid-state image sensor, the method comprising preparing a substrate including a photoelectric conversion portion, forming, on the substrate, a structure which includes a first member made of a material containing silicon oxide and a second member arranged on the first member and made of a material containing silicon carbide, forming an opening in a position above the photoelectric conversion portion in the structure by removing a part of the first and the second members, and forming a transparent member in the opening, wherein the second member is formed at a first temperature and the transparent member is formed at a second temperature lower than the first temperature.

Abstract translation: 一种制造固态图像传感器的方法，所述方法包括制备包括光电转换部分的基板，在所述基板上形成包括由包含氧化硅的材料制成的第一部件和布置在所述第二部件上的第二部件的结构 第一部件，由含有碳化硅的材料制成，通过去除第一和第二部件的一部分，在该结构中的光电转换部分上方形成开口，并在该开口中形成透明部件，其中第二部件 形成在第一温度下，并且透明构件形成在低于第一温度的第二温度。

公开(公告)号：US20140375853A1

公开(公告)日：2014-12-25

申请号：US14294484

申请日：2014-06-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yusuke Tsukagoshi ,  Shunsuke Nakatsuka ,  Takayasu Kanesada

IPC: H01L27/146 ,  H04N5/335 ,  H01L31/18

CPC classification number: H01L27/14625 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14685

Abstract: A method of manufacturing a solid-state imaging apparatus, comprising preparing a semiconductor substrate including a photoelectric conversion portion and a structure which includes an insulating member formed on the photoelectric conversion portion and a wiring pattern formed in the insulating member, forming a film made of SiC and/or SiCN on the structure, forming an opening immediately above the photoelectric conversion portion by removing part of the film and part of the insulating member, and depositing a member in the opening and on the film, and forming a light-guide portion by polishing the member so as to expose the film.

Abstract translation: 一种制造固态成像装置的方法，包括制备包括光电转换部分的半导体衬底和形成在所述光电转换部分上形成的绝缘构件的结构和形成在所述绝缘构件中的布线图案，形成由 SiC和/或SiCN，通过除去膜的一部分和绝缘构件的一部分，形成光电转换部分正上方的开口，并将元件沉积在开口和膜上，并形成导光部分 通过抛光该构件以使该膜露出。

公开(公告)号：US11488998B2

公开(公告)日：2022-11-01

申请号：US16853592

申请日：2020-04-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Akihiro Kawano ,  Yukinobu Suzuki ,  Takayasu Kanesada

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/48 ,  H01L23/532 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor apparatus configured to decrease occurrence of exfoliation between a conductor layer and an insulator layer is provided. A first region containing silicon and copper is disposed between a first conductor portion and a first insulator portion. A second region containing silicon and copper is disposed between a second conductor portion and a second insulator portion. The first region has a maximum nitrogen concentration higher than that of the second region.

公开(公告)号：US09608031B2

公开(公告)日：2017-03-28

申请号：US15055949

申请日：2016-02-29

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takayasu Kanesada

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629

Abstract: A method for manufacturing a solid-state image sensor, the method comprising preparing a substrate including a photoelectric conversion portion, forming, on the substrate, a structure which includes a first member made of a material containing silicon oxide and a second member arranged on the first member and made of a material containing silicon carbide, forming an opening in a position above the photoelectric conversion portion in the structure by removing a part of the first and the second members, and forming a transparent member in the opening, wherein the second member is formed at a first temperature and the transparent member is formed at a second temperature lower than the first temperature.

公开(公告)号：US20150179867A1

公开(公告)日：2015-06-25

申请号：US14579171

申请日：2014-12-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tetsuya Kimura ,  Takayasu Kanesada ,  Toru Eto ,  Takaharu Kondo

IPC: H01L31/18 ,  H01L31/0232

CPC classification number: H01L31/02327 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: In a method for manufacturing a photoelectric conversion device which includes: a substrate including a photoelectric conversion element; and a light guide which includes an insulator having an opening corresponding to the photoelectric conversion element and containing silicon oxide and a member located in the opening and containing silicon nitride, the method includes: forming a first silicon nitride film which forms the member in the opening by a parallel plate type plasma CVD apparatus; and forming a second silicon nitride film which forms the member in the opening and on the first silicon nitride film by a high density plasma CVD apparatus. In the photoelectric conversion device, the first silicon nitride film has a thickness of 55 nm or more.

Abstract translation: 一种光电转换装置的制造方法，包括：具有光电转换元件的基板; 以及导光体，其具有绝缘体，所述绝缘体具有与所述光电转换元件对应的开口并且含有氧化硅和位于所述开口内且含有氮化硅的构件，所述方法包括：在所述开口部中形成形成所述构件的第一氮化硅膜 通过平行板式等离子体CVD装置; 以及通过高密度等离子体CVD装置形成在开口中和第一氮化硅膜上形成部件的第二氮化硅膜。 在光电转换装置中，第一氮化硅膜的厚度为55nm以上。

公开(公告)号：US20200343293A1

公开(公告)日：2020-10-29

申请号：US16853592

申请日：2020-04-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Akihiro Kawano ,  Yukinobu Suzuki ,  Takayasu Kanesada

IPC: H01L27/146

Abstract: A semiconductor apparatus configured to decrease occurrence of exfoliation between a conductor layer and an insulator layer is provided. A first region containing silicon and copper is disposed between a first conductor portion and a first insulator portion. A second region containing silicon and copper is disposed between a second conductor portion and a second insulator portion. The first region has a maximum nitrogen concentration higher than that of the second region.

公开(公告)号：US09871072B2

公开(公告)日：2018-01-16

申请号：US15165957

申请日：2016-05-26

Applicant: CANON KABUSHIKI KAISHA

Inventor： Akihiro Kawano ,  Yukinobu Suzuki ,  Nobutaka Ukigaya ,  Takayasu Kanesada ,  Takeshi Aoki ,  Hiroshi Takakusagi

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14632 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H04N5/369

Abstract: A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.

公开(公告)号：US20170358622A1

公开(公告)日：2017-12-14

申请号：US15600978

申请日：2017-05-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takayasu Kanesada

IPC: H01L27/146

CPC classification number: H01L31/18 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L31/0232

Abstract: A method of manufacturing a solid-state image sensor is provided. A first insulating member and an electrically conductive member is formed above a semiconductor substrate. A connecting portion of an upper surface of the electrically conductive member is covered with part of the first insulating member. First openings corresponding to the photoelectric conversion units are formed in the first insulating member. A second insulating member covering the first insulating member is then formed. The second insulating member is partially removed to expose the part of the first insulating member covering the connecting portion. A third insulating member that covers the first and second insulating members is then formed. The third insulating member is partially removed to expose the second insulating member. A second opening to expose the connecting portion is then formed to form a plug.

公开(公告)号：US20200381469A1

公开(公告)日：2020-12-03

申请号：US16879016

申请日：2020-05-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takayasu Kanesada ,  Koji Hara

IPC: H01L27/146 ,  H04N5/3745

Abstract: A disclosed photoelectric conversion device includes: a semiconductor layer in which a photoelectric converter is provided; a substrate arranged on one face side of the semiconductor layer; and an interconnection structure arranged between the semiconductor layer and the substrate. The interconnection structure includes a first insulating film made of a first insulating material and a second insulating film provided on the semiconductor layer side of the first insulating film and made of a second insulating material, the first insulating material permeates more hydrogen than the second insulating material, an insulating member made of the first insulating material is located between the first insulating film and the semiconductor layer, and the first insulating film and the insulating member are connected to each other via an opening provided in the second insulating film.