公开(公告)号：US09117867B2

公开(公告)日：2015-08-25

申请号：US13536098

申请日：2012-06-28

申请人： Bernard L. Hwang ,  Jose Antonio Marin ,  Son T. Nguyen

发明人： Bernard L. Hwang ,  Jose Antonio Marin ,  Son T. Nguyen

IPC分类号： H01L21/683 ,  H01L21/687

CPC分类号： H01L21/6833 ,  H01L21/68785 ,  Y10T279/23

摘要： Embodiments of electrostatic chucks for substrate processing are provided herein. In some embodiments, an electrostatic chuck may include a puck for supporting a substrate, the puck formed from a dielectric material and having a chucking electrode disposed within the puck proximate a support surface of the puck to electrostatically retain the substrate when disposed on the puck; a base having a ring extending from the base to support the puck; and a spacer disposed between the base and the puck to support the puck above the base such that a gap is formed between the puck and the base, wherein the spacer supports the puck proximate a peripheral edge of the puck.

摘要翻译： 本文提供了用于基板处理的静电卡盘的实施例。 在一些实施例中，静电卡盘可以包括用于支撑基底的圆盘，所述圆盘由电介质材料形成，并且具有设置在靠近所述圆盘的支撑表面的所述圆盘内的卡盘电极，以在设置在所述圆盘上时静电地保持所述基板; 具有从所述基部延伸以支撑所述圆盘的环的基部; 以及间隔件，其设置在所述基部和所述圆盘之间，以将所述圆盘支撑在所述基座上方，使得在所述圆盘和所述基座之间形成间隙，其中所述间隔件支撑靠近所述圆盘的周边边缘的所述圆盘。

公开(公告)号：US08546273B2

公开(公告)日：2013-10-01

申请号：US13192139

申请日：2011-07-27

申请人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

发明人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

IPC分类号： H01L21/469

CPC分类号： H01L21/3144 ,  C23C8/02 ,  C23C8/36 ,  C23C8/80 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/318

摘要： Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH3) and an inert gas while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer.

摘要翻译： 本文提供了形成含氮层的方法和装置。 在一些实施方案中，形成含氮层的方法可以包括将其上设置有第一层的衬底放置在处理室的衬底支撑件上; 将基底加热到至少约250摄氏度的温度; 以及将第一层暴露于由基本上由氨（NH 3）和惰性气体组成的工艺气体形成的射频（RF）等离子体，同时将处理室保持在约10mTorr至约40mTorr的压力下，以至少将 第一层的上部成为含氮层。

公开(公告)号：US08481433B2

公开(公告)日：2013-07-09

申请号：US12749088

申请日：2010-03-29

申请人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

发明人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

IPC分类号： H01L21/469

CPC分类号： H01L21/3144 ,  C23C8/02 ,  C23C8/36 ,  C23C8/80 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/318

摘要： Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH3).

摘要翻译： 本文提供了形成含氮层的方法和装置。 在一些实施例中，一种方法包括将其上设置有第一层的衬底放置在处理室的衬底支撑件上; 将基底加热到至少约250摄氏度的温度; 以及将第一层暴露于由包括氮气的工艺气体形成的射频（RF）等离子体，同时将处理室保持在约10mTorr至约40mTorr的压力，以将至少第一层的上部转化为氮 包含层。 在一些实施方案中，工艺气体包括氨（NH 3）。

公开(公告)号：US20110281442A1

公开(公告)日：2011-11-17

申请号：US13192139

申请日：2011-07-27

申请人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

发明人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

IPC分类号： H01L21/318 ,  H01L21/316

CPC分类号： H01L21/3144 ,  C23C8/02 ,  C23C8/36 ,  C23C8/80 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/318

摘要： Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH3) and an inert gas while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer.

摘要翻译： 本文提供了形成含氮层的方法和装置。 在一些实施方案中，形成含氮层的方法可以包括将其上设置有第一层的衬底放置在处理室的衬底支撑件上; 将基底加热到至少约250摄氏度的温度; 以及将第一层暴露于由基本上由氨（NH 3）和惰性气体组成的工艺气体形成的射频（RF）等离子体，同时将处理室保持在约10mTorr至约40mTorr的压力下，以至少将 第一层的上部成为含氮层。

公开(公告)号：US09312154B2

公开(公告)日：2016-04-12

申请号：US12763522

申请日：2010-04-20

申请人： Binh Tran ,  Anqing Cui ,  Bernard L. Hwang ,  Son T. Nguyen ,  Anh N. Nguyen ,  Sean M. Seutter ,  Xianzhi Tao

发明人： Binh Tran ,  Anqing Cui ,  Bernard L. Hwang ,  Son T. Nguyen ,  Anh N. Nguyen ,  Sean M. Seutter ,  Xianzhi Tao

IPC分类号： H01L21/67 ,  C23C16/455 ,  C23C16/44 ,  H01L21/687

CPC分类号： H01L21/6719 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45512 ,  C23C16/45561 ,  H01L21/68742 ,  H01L21/68785

摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.

摘要翻译： 本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。 本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有减小的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能 在多个处理室之间进行匹配，以及改进的处理室可维护性。

公开(公告)号：US20170250060A1

公开(公告)日：2017-08-31

申请号：US15594297

申请日：2017-05-12

申请人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvili

发明人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvili

IPC分类号： H01J37/32 ,  H01L21/687 ,  H01L21/67

CPC分类号： H01J37/32724 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

摘要： A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.

公开(公告)号：US08999106B2

公开(公告)日：2015-04-07

申请号：US11960300

申请日：2007-12-19

申请人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini ,  Michael J. Mark

发明人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini ,  Michael J. Mark

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/68742 ,  H01J37/321 ,  H01J37/32623 ,  H01L21/67069 ,  H01L21/68735

摘要： The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.

摘要翻译： 本发明总体上提供了用于在处理过程中控制边缘性能的方法和装置。 本发明的一个实施例提供了一种装置，其包括限定处理体积的室主体，被配置为将处理气体流入处理体积的气体入口以及设置在处理体积中的支撑基座。 支撑基座包括具有基板支撑表面的顶板，该基板支撑表面被配置为在背面上接收和支撑基板;以及边缘表面，其被构造成沿着基板的外边缘围绕基板，以及在基板的顶表面之间的高度差 基板和边缘表面用于控制基板的边缘区域对处理气体的曝光。

公开(公告)号：US20120164845A1

公开(公告)日：2012-06-28

申请号：US13415753

申请日：2012-03-08

申请人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

发明人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

IPC分类号： H01L21/318 ,  H01L21/263

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

摘要翻译： 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

公开(公告)号：US20100080904A1

公开(公告)日：2010-04-01

申请号：US12240120

申请日：2008-09-29

申请人： Nir Merry ,  Son T. Nguyen

发明人： Nir Merry ,  Son T. Nguyen

IPC分类号： C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45563

摘要： Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.

摘要翻译： 本文公开了处理衬底的方法和设备。 处理室包括室主体，基板支撑基座，泵口和气体注入漏斗。 腔体具有内部体积，并且衬底支撑基座设置在腔体的内部体积中。 泵口连接到内部体积并且设置在离基板支撑基座的中心轴线偏心的位置。 泵端口提供靠近基板支撑基座的表面的方位不均匀的泵送，并且在使用期间在内部体积内产生高压和低压的局部区域。 气体注入漏斗设置在室主体的顶部并与衬底支撑基座相对。 气体注入漏斗偏离衬底支撑基座的中心轴线并且设置在低压区域中。

公开(公告)号：US20090283252A1

公开(公告)日：2009-11-19

申请号：US12122616

申请日：2008-05-16

申请人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

发明人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

IPC分类号： G05D23/00 ,  F28F1/10 ,  H05B1/00 ,  H05B1/02

CPC分类号： F28F7/02

摘要： A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.

摘要翻译： 一种用于加热或冷却流体的方法和装置。 连接到多个分配喷嘴的入口导管，与设备外围的通道流体连通。 插入件和套筒协同地限定与流体流体连通的薄间隙，流体流过该间隙。 在薄间隙附近的热插入物通过出口管道流出或流出流体。