公开(公告)号：US20070068453A1

公开(公告)日：2007-03-29

申请号：US11549306

申请日：2006-10-13

申请人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

发明人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

IPC分类号： B05C13/02 ,  B05C11/00

CPC分类号： G01K11/12 ,  G01K11/00 ,  G01K11/125 ,  G03F7/38

摘要： A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.

摘要翻译： 在光刻工艺中在衬底处理期间确定衬底的局部区域处的温度的方法包括以下步骤：用光源在衬底上的多个位置处独立地照射包括光致抗蚀剂图案的光致抗蚀剂图案，使得光 从光致抗蚀剂图案的多个位置衍射; 测量来自多个位置的衍射光，以确定与来自多个位置的相应位置相关联的测量的衍射值; 以及将测量的衍射值与文库进行比较，以确定多个位置处的光致抗蚀剂层的预照射过程温度。

公开(公告)号：US07948096B2

公开(公告)日：2011-05-24

申请号：US11408472

申请日：2006-04-21

申请人： Bang-Ching Ho ,  Jen-Chieh Shih

发明人： Bang-Ching Ho ,  Jen-Chieh Shih

IPC分类号： H01L23/58

CPC分类号： G03F7/2041 ,  G03F7/70341

摘要： A semiconductor device having a specific contact angle for immersion lithography is disclosed. The semiconductor device includes a substrate and a top layer disposed on the substrate. The top layer used in an immersion lithography process includes a composition such that a fluid droplet that occurs during the immersion lithographic process and is not part of an exposure fluid puddle, will have a contact angle between about 40° and about 80° with a surface of the top layer.

摘要翻译： 公开了具有用于浸没式光刻的特定接触角的半导体器件。 半导体器件包括衬底和设置在衬底上的顶层。 在浸没式光刻工艺中使用的顶层包括组合物，使得在浸没式光刻工艺期间发生并且不是曝光流体池的一部分的流体液滴将具有约40°至约80°的接触角，其表面 的顶层。

公开(公告)号：US07452822B2

公开(公告)日：2008-11-18

申请号：US11352815

申请日：2006-02-13

申请人： Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

发明人： Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

IPC分类号： H01L21/302

CPC分类号： H01L21/76808

摘要： A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material layer followed by reacting the acid with the plug filling material layer to form a soluble portion which is then removed using a solvent. A remaining portion of the plug filling material is cured and a BARC layer may be formed over the process surface prior to patterning trenches in an overlying resist layer and forming a dual damascene structure.

摘要翻译： 一种用于在半导体器件制造工艺中形成双镶嵌结构的方法，其中可以包括覆盖在工艺表面上的塞子填充材料的厚度部分的通孔塞通过将酸扩散到塞填充材料层中，然后使酸与 塞子填充材料层以形成可溶部分，然后使用溶剂除去。 塞子填充材料的剩余部分被固化，并且可以在上覆的抗蚀剂层中的沟槽图案形成双重镶嵌结构之前，在工艺表面上形成BARC层。

公开(公告)号：US07279793B2

公开(公告)日：2007-10-09

申请号：US11007031

申请日：2004-12-08

申请人： Bang-Ching Ho ,  Jen-Chieh Shih

发明人： Bang-Ching Ho ,  Jen-Chieh Shih

IPC分类号： H01L21/00 ,  H01L31/0232

CPC分类号： H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An anti-reflective coating layer for the manufacturing of semiconductor devices is disclosed. In one example, a partial semiconductor device includes a substrate; a bottom anti-reflective coating (BARC) layer over the substrate, and the BARC layer is transformed from being hydrophobic to being hydrophilic during a lithography process; and a photoresist layer over the BARC layer.

摘要翻译： 公开了一种用于制造半导体器件的抗反射涂层。 在一个示例中，部分半导体器件包括衬底; 在衬底上的底部抗反射涂层（BARC）层，并且BARC层在光刻工艺期间从疏水转变为亲水的; 以及BARC层上的光致抗蚀剂层。

公开(公告)号：US07135259B2

公开(公告)日：2006-11-14

申请号：US10447010

申请日：2003-05-28

申请人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

发明人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

IPC分类号： H01L21/66

CPC分类号： G01K11/12 ,  G01K11/00 ,  G01K11/125 ,  G03F7/38

摘要： A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.

摘要翻译： 在光刻工艺中在衬底处理期间确定衬底的局部区域处的温度的方法包括以下步骤：用光源在衬底上的多个位置处独立地照射包括光致抗蚀剂图案的光致抗蚀剂图案，使得光 从光致抗蚀剂图案的多个位置衍射; 测量来自多个位置的衍射光，以确定与来自多个位置的相应位置相关联的测量的衍射值; 以及将测量的衍射值与文库进行比较，以确定多个位置处的光致抗蚀剂层的预照射过程温度。

公开(公告)号：US20060228894A1

公开(公告)日：2006-10-12

申请号：US11095216

申请日：2005-03-31

申请人： Bang-Ching Ho ,  Jen-Chieh Shih

发明人： Bang-Ching Ho ,  Jen-Chieh Shih

IPC分类号： H01L21/47

CPC分类号： H01L21/31144 ,  G03F7/40 ,  H01L21/0273

摘要： Provided is a method for manufacturing a semiconductor device. In one example, the method includes forming a negative photoresist layer over an underlying layer, where the negative photoresist layer is soluble by a developer when formed. The negative photoresist layer is patterned using a chromium-less mask. The patterning alters at least a portion of the negative photoresist layer so that the altered portion is not soluble by the developer. The patterned negative photoresist layer is developed to form at least one opening in the negative photoresist layer by removing an unaltered portion of the negative photoresist layer. The negative photoresist layer is then heated, which causes the negative photoresist layer to flow.

摘要翻译： 提供一种半导体器件的制造方法。 在一个实例中，该方法包括在下层上形成负光致抗蚀剂层，其中负光致抗蚀剂层在形成时可被显影剂溶解。 使用无铬掩模对负性光致抗蚀剂层进行图案化。 该图形改变至少一部分负性光致抗蚀剂层，使得改变的部分不被显影剂溶解。 通过去除负光致抗蚀剂层的未改变的部分，显影图案化的负性光致抗蚀剂层以在负性光致抗蚀剂层中形成至少一个开口。 然后加热负性光致抗蚀剂层，这导致负性光致抗蚀剂层流动。

公开(公告)号：US20060189172A1

公开(公告)日：2006-08-24

申请号：US11408472

申请日：2006-04-21

申请人： Bang-Ching Ho ,  Jen-Chieh Shih

发明人： Bang-Ching Ho ,  Jen-Chieh Shih

IPC分类号： H01L21/00

CPC分类号： G03F7/2041 ,  G03F7/70341

摘要： A method for performing immersion lithography on a semiconductor wafer is disclosed. The method includes positioning the semiconductor wafer beneath a lens and applying a fluid between a top surface of the semiconductor wafer and the lens. An additive can be provided to the top surface so that any droplet of the fluid that forms on the top surface of the semiconductor wafer will have a contact angle between about 40° and about 80°.

公开(公告)号：US20060110945A1

公开(公告)日：2006-05-25

申请号：US10994500

申请日：2004-11-22

申请人： Bang-Ching Ho ,  Jen-Chieh Shih

发明人： Bang-Ching Ho ,  Jen-Chieh Shih

IPC分类号： H01L21/00

CPC分类号： G03F7/2041 ,  G03F7/70341

摘要： A method for performing immersion lithography on a semiconductor wafer is disclosed. The method includes positioning the semiconductor wafer beneath a lens and applying a fluid between a top surface of the semiconductor wafer and the lens. An additive can be provided to the top surface so that any droplet of the fluid that forms on the top surface of the semiconductor wafer will have a contact angle between about 40° and about 80°.

摘要翻译： 公开了一种在半导体晶片上进行浸没光刻的方法。 该方法包括将半导体晶片定位在透镜下方并在半导体晶片的顶表面和透镜之间施加流体。 可以向顶表面提供添加剂，使得在半导体晶片的顶表面上形成的任何流体液滴将具有约40°至约80°之间的接触角。

公开(公告)号：US07751025B2

公开(公告)日：2010-07-06

申请号：US11549306

申请日：2006-10-13

申请人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

发明人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

IPC分类号： G03B27/32 ,  G03D5/00 ,  B05C11/00

CPC分类号： G01K11/12 ,  G01K11/00 ,  G01K11/125 ,  G03F7/38

摘要： A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.

摘要翻译： 在光刻工艺中在衬底处理期间确定衬底的局部区域处的温度的方法包括以下步骤：用光源在衬底上的多个位置处独立地照射包括光致抗蚀剂图案的光致抗蚀剂图案，使得光 从光致抗蚀剂图案的多个位置衍射; 测量来自多个位置的衍射光，以确定与来自多个位置的相应位置相关联的测量的衍射值; 以及将测量的衍射值与文库进行比较，以确定多个位置处的光致抗蚀剂层的预照射过程温度。

公开(公告)号：US20070190778A1

公开(公告)日：2007-08-16

申请号：US11352815

申请日：2006-02-13

申请人： Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

发明人： Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808

摘要： A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material layer followed by reacting the acid with the plug filling material layer to form a soluble portion which is then removed using a solvent. A remaining portion of the plug filling material is cured and a BARC layer may be formed over the process surface prior to patterning trenches in an overlying resist layer and forming a dual damascene structure.

摘要翻译： 一种用于在半导体器件制造工艺中形成双镶嵌结构的方法，其中可以包括覆盖在工艺表面上的塞子填充材料的厚度部分的通孔塞通过将酸扩散到塞填充材料层中，然后使酸与 塞子填充材料层以形成可溶部分，然后使用溶剂除去。 塞子填充材料的剩余部分被固化，并且可以在上覆的抗蚀剂层中的沟槽图案形成双重镶嵌结构之前，在工艺表面上形成BARC层。