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    ORGANIC ELECTROLUMINESCENT TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE
    2.
    发明申请
    ORGANIC ELECTROLUMINESCENT TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE 有权
    有机电致发光器件阵列基板及其制造方法及其显示装置

    公开(公告)号：US20170025491A1

    公开(公告)日：2017-01-26

    申请号：US15171269

    申请日：2016-06-02

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Xuyuan Li ,  Liqiang Chen ,  Chunsheng Jiang ,  Changcheng Xu

    IPC: H01L27/32 ,  H01L51/56

    CPC classification number: H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/3246 ,  H01L27/3248 ,  H01L2227/323

    Abstract: An embodiment of the present disclosure provides an organic electroluminescent transistor array substrate, including a substrate, and a gate layer, a gate insulating layer, a semiconductor layer, a source layer, a pixel defining layer, an electroluminescent layer and a drain layer formed on the substrate, wherein, the source layer and the drain layer are located in different levels, the source layer includes plural source electrode units corresponding to sub-pixel units respectively, the pixel defining layer includes plural pixel defining units corresponding to the source electrode units respectively, and the respective source electrode units are embedded within the pixel defining units corresponding thereto.

    Abstract translation: 本公开的实施例提供了一种有机电致发光晶体管阵列基板，包括基板，以及形成在基板上的栅极层，栅极绝缘层，半导体层，源极层，像素限定层，电致发光层和漏极层 基板，其中源极层和漏极层位于不同的电平，源极层包括分别对应于子像素单元的多个源电极单元，像素限定层包括分别对应于源电极单元的多个像素限定单元 并且各个源电极单元嵌入与其对应的像素限定单元内。

    Thin film transistor, thin film transistor manufacturing method and array substrate
    4.
    发明授权
    Thin film transistor, thin film transistor manufacturing method and array substrate 有权

    公开(公告)号：US10199510B2

    公开(公告)日：2019-02-05

    申请号：US14906490

    申请日：2015-08-12

    Applicant: Boe Technology Group Co., Ltd.

    Inventor： Xuyuan Li

    IPC: H01L29/786 ,  H01L21/02 ,  H01L21/44 ,  H01L29/45 ,  H01L29/66 ,  H01L27/12

    Abstract: The present disclosure relates to a thin film transistor, a method for manufacturing a thin film transistor and an array substrate. The thin film transistor comprises an active layer, a source and a drain, the source comprising a source first conductive layer and a source first buffer layer, the drain comprising a drain first conductive layer and a drain first buffer layer; at least a part of an upper surface of the source first buffer layer and at least a part of an upper surface of the drain first buffer layer being in contact with a lower surface of the active layer, at least a part of a side wall of the source first conductive layer and at least a part of a side wall of the drain first conductive layer being in contact with the active layer, the side wall of the source first conductive layer and the side wall of the drain first conductive layer in contact with the active layer being formed with an oxide layer. The composition of the active layer of the above thin film transistor would not be damaged by the source first conductive layer and the drain first conductive layer, in which way higher electron mobility can be guaranteed for the thin film transistor, and the thin film transistor is maintained in a good electric property and stability.

    Pixel defining layer and manufacturing method thereof, display panel and display device
    5.
    发明授权
    Pixel defining layer and manufacturing method thereof, display panel and display device 有权

    公开(公告)号：US09653526B2

    公开(公告)日：2017-05-16

    申请号：US14912267

    申请日：2015-10-20

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Xuyuan Li

    IPC: H01L51/56 ,  H01L27/32 ,  H01L51/52

    CPC classification number: H01L27/3246 ,  H01L27/32 ,  H01L51/0003 ,  H01L51/0012 ,  H01L51/52 ,  H01L51/56

    Abstract: The present invention discloses a pixel defining layer and a manufacturing method thereof, a display panel and a display device. The pixel defining layer comprises a first pixel defining layer and a second pixel defining layer stacked on the first pixel defining layer, wherein the first pixel defining layer has a plurality of first openings corresponding to light-emitting regions of respective sub-pixels in one-to-one correspondence, the second pixel defining layer has a plurality of second openings corresponding to the first openings in one-to-one correspondence, a cross section of the first opening is in a regular trapezoidal shape which is narrow at top and wide at bottom, and a cross section of the second opening is in an inverted trapezoidal shape which is wide at top and narrow at bottom. The present invention can effectively avoid the short between the anode and the cathode and the open of the cathode.

    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR MANUFACTURING METHOD AND ARRAY SUBSTRATE
    6.
    发明申请
    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR MANUFACTURING METHOD AND ARRAY SUBSTRATE 审中-公开

    公开(公告)号：US20170110594A1

    公开(公告)日：2017-04-20

    申请号：US14906490

    申请日：2015-08-12

    Applicant: Boe Technology Group Co., Ltd.

    Inventor： Xuyuan Li

    IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/45 ,  H01L21/44

    CPC classification number: H01L29/78696 ,  H01L21/02244 ,  H01L21/44 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

    Abstract: The present disclosure relates to a thin film transistor, a method for manufacturing a thin film transistor and an array substrate. The thin film transistor comprises an active layer, a source and a drain, the source comprising a source first conductive layer and a source first buffer layer, the drain comprising a drain first conductive layer and a drain first buffer layer; at least a part of an upper surface of the source first buffer layer and at least a part of an upper surface of the drain first buffer layer being in contact with a lower surface of the active layer, at least a part of a side wall of the source first conductive layer and at least a part of a side wall of the drain first conductive layer being in contact with the active layer, the side wall of the source first conductive layer and the side wall of the drain first conductive layer in contact with the active layer being formed with an oxide layer. The composition of the active layer of the above thin film transistor would not be damaged by the source first conductive layer and the drain first conductive layer, in which way higher electron mobility can be guaranteed for the thin film transistor, and the thin film transistor is maintained in a good electric property and stability.

    Bottom Emission Organic Electroluminescence Display Device, Preparation Method Thereof, and Display Apparatus
    7.
    发明申请
    Bottom Emission Organic Electroluminescence Display Device, Preparation Method Thereof, and Display Apparatus 有权
    底发射有机电致发光显示装置及其制备方法及显示装置

    公开(公告)号：US20160218161A1

    公开(公告)日：2016-07-28

    申请号：US14905130

    申请日：2015-06-19

    Applicant: BOE TECHNOLOGY GROUP CO. LTD.

    Inventor： Xuyuan Li

    IPC: H01L27/32

    CPC classification number: H01L27/3244 ,  H01L27/3241 ,  H01L27/3258 ,  H01L51/5275

    Abstract: A bottom emission organic electroluminescence display, a preparation method thereof, and a display apparatus are provided. The display includes a base substrate (100), and at least one dielectric thin film layer group (200) and a thin film transistor (300) that are successively arranged on the base substrate; each dielectric thin film layer group (200) comprising at least two stacked dielectric thin film layers (201, 202, 203), the refractive indices of which are increased progressively from the base substrate towards the thin film transistor. Because at least one group of at least two stacked dielectric thin film layers, the refractive indices of which are increased progressively from the base substrate towards the thin film transistor, are added between the base substrate and the thin film transistor, not only the reflectance of the surface of the metal layers contained in the thin film transistor (300) may be decreased, but also the loss rate of the emitted light may be decreased, thereby improving the image quality and display effect.

    Abstract translation: 提供了底部发射有机电致发光显示器，其制备方法和显示装置。 所述显示器包括基底基板（100）以及依次布置在所述基底基板上的至少一个电介质薄膜层组（200）和薄膜晶体管（300） 每个电介质薄膜层组（200）包括至少两个堆叠的电介质薄膜层（201,202,203），其折射率从基底朝向薄膜晶体管逐渐增加。 因为至少两组叠层的电介质薄膜层（其折射率从基底朝向薄膜晶体管逐渐增加）被添加到基底衬底和薄膜晶体管之间，不仅反射率 可以减少包含在薄膜晶体管（300）中的金属层的表面，而且可以减少发射光的损耗率，从而提高图像质量和显示效果。

    Display substrate, manufacturing method and driving method thereof, and display device
    9.
    发明授权
    Display substrate, manufacturing method and driving method thereof, and display device 有权

    公开(公告)号：US09859339B2

    公开(公告)日：2018-01-02

    申请号：US15307090

    申请日：2016-03-31

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Hongda Sun ,  Xuyuan Li ,  Meili Wang

    IPC: H01L27/32 ,  H01L21/77 ,  H01L51/52 ,  H01L51/56

    CPC classification number: H01L27/32 ,  H01L21/77 ,  H01L27/3246 ,  H01L27/3274 ,  H01L51/52 ,  H01L51/5296 ,  H01L51/56

    Abstract: A display substrate, a manufacturing method and a driving method thereof, and a display device are provided. The display substrate includes a substrate, a gate layer disposed on the substrate, a gate insulating layer disposed on the gate layer, a pixel defining layer disposed on the gate insulating layer, the pixel defining layer includes a plurality of defining regions, a light emitting layer in the defining regions of the pixel defining layer disposed on the gate insulating layer, wherein the light emitting layer includes an electron excitation layer, a light excitation layer and a hole excitation layer, and a source/drain layer disposed on the light emitting layer. According to an embodiment of the present disclosure, light emission and control of light emission can be realized merely by a three-layer structure of a gate layer, a light emitting layer and a source/drain layer, and compared with the OLED light emitting structure of the prior art, the layer structure is simpler, the light emitted is less blocked, and luminous efficiency is higher.

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