Invention Grant
- Patent Title: Thin film transistor and method for fabricating the same, array substrate and display device
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Application No.: US15320332Application Date: 2016-03-07
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Publication No.: US10256315B2Publication Date: 2019-04-09
- Inventor: Chunsheng Jiang , Xuyuan Li , Wei Liu , Xiaming Zhu
- Applicant: Boe Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Calfee, Halter & Griswold LLP
- Priority: CN201510166870 20150409
- International Application: PCT/CN2016/075769 WO 20160307
- International Announcement: WO2016/161863 WO 20161013
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/423 ; H01L29/786 ; H01L29/49 ; H01L29/45
Abstract:
A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The thin film transistor comprises a copper gate, a gate insulating layer, an active layer, a source, and a drain. The thin film transistor further comprises a copper alloy layer which is arranged on a side of the gate facing the active layer.
Public/Granted literature
- US20170256621A1 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2017-09-07
Information query
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