Patent search ap:("BELL TELEPHONE LABOR INC") AND inv:"DAWON KAHNG" Page 1

1.

发明授权
Method of making a varactor diode by epitaxial growth and diffusion 失效
Title translation: 通过外延生长和扩散制造变容二极管的方法

公开(公告)号：US3149395A

公开(公告)日：1964-09-22

申请号：US5734560

申请日：1960-09-20

Applicant: BELL TELEPHONE LABOR INC

Inventor： BRAY ANTHONY R , DAWON KAHNG

IPC: C30B31/02 , H01L21/00 , H01L21/205 , H01L21/22 , H01L29/00 , H01L29/06 , H01L29/36 , H01L29/92 , H01L29/93 , H01L31/18

CPC classification number: H01L29/93 , C30B31/02 , H01L21/00 , H01L21/22 , H01L29/00 , H01L29/06 , H01L29/36 , H01L29/92 , H01L31/18 , Y10S148/007 , Y10S148/037 , Y10S148/115 , Y10S148/151 , Y10S438/916

2.

发明授权
Small area semiconductor device 失效
Title translation: 小面积半导体器件

公开(公告)号：US3360851A

公开(公告)日：1968-01-02

申请号：US49190765

申请日：1965-10-01

Applicant: BELL TELEPHONE LABOR INC

Inventor： DAWON KAHNG , RYDER ROBERT M

IPC: H01L21/00 , H01L21/60 , H01L23/29 , H01L23/485 , H01L23/488 , H01L27/00

CPC classification number: H01L23/488 , H01L21/00 , H01L23/291 , H01L23/485 , H01L24/80 , H01L27/00 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01032 , H01L2924/01046 , H01L2924/01055 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12036 , H01L2924/30105 , H01L2924/30107 , H01L2924/00

$Light modulator using a variable spacing diffraction grating$

3.

发明授权
Light modulator using a variable spacing diffraction grating 失效
Title translation: 使用可变间距衍射光栅的光调制器

公开(公告)号：US3259014A

公开(公告)日：1966-07-05

申请号：US12113961

申请日：1961-06-30

Applicant: BELL TELEPHONE LABOR INC

Inventor： JOHNSON LEO F , DAWON KAHNG

IPC: G02B26/00 , G02B26/02

CPC classification number: G02B26/02 , G02B26/002

4.

发明授权
Varactor diode with concentration of deep lying impurities and enabling circuitry 失效
Title translation: 变容二极管具有浓度较高的杂质和使能电路

公开(公告)号：US3176151A

公开(公告)日：1965-03-30

申请号：US8891261

申请日：1961-02-13

Applicant: BELL TELEPHONE LABOR INC

Inventor： ATALLA MARTIN M , DAWON KAHNG

IPC: H01L29/00

CPC classification number: H01L29/00 , Y10S148/062

5.

发明授权
Low temperature negative resistance device 失效
Title translation: 低温负电阻器件

公开(公告)号：US3121808A

公开(公告)日：1964-02-18

申请号：US13801161

申请日：1961-09-14

Applicant: BELL TELEPHONE LABOR INC

Inventor： DAWON KAHNG , SMITH GEORGE E

IPC: G11C11/44 , H01L21/00 , H01L29/00

CPC classification number: H01L21/00 , G11C11/44 , H01L29/00

6.

发明授权
Camera tube target including n-type semiconductor having higher concentration of deep donors than shallow donors 失效
Title translation: 相机管目标包括具有比浅供体更深的供体浓度较高的n型半导体

公开(公告)号：US3403278A

公开(公告)日：1968-09-24

申请号：US61445767

申请日：1967-02-07

Applicant: BELL TELEPHONE LABOR INC

Inventor： DAWON KAHNG , MORTON JACK A

IPC: H01J29/45 , H01L31/00

CPC classification number: H01J29/456 , H01L31/00 , Y10S148/139 , Y10S148/172

7.

发明授权
Method for making electrode connections to potassium tantalate-niobate 失效
Title translation: 电极与钽酸铌酸钾连接的方法

公开(公告)号：US3323947A

公开(公告)日：1967-06-06

申请号：US41913864

申请日：1964-12-17

Applicant: BELL TELEPHONE LABOR INC

Inventor： DAWON KAHNG , LIGENZA JOSEPH R , WEMPLE STUART H

IPC: G02F1/00 , H01B1/00 , H01J37/32 , H01L21/00

CPC classification number: H01J37/32 , G02F1/0018 , H01B1/00 , H01J37/32192 , H01J37/32229 , H01J2237/338 , H01L21/00

8.

发明授权
Barrier diode with metal contact and method of making 失效
Title translation: 具有金属接触的阻挡二极管和制造方法

公开(公告)号：US3290127A

公开(公告)日：1966-12-06

申请号：US35566364

申请日：1964-03-30

Applicant: BELL TELEPHONE LABOR INC

Inventor： DAWON KAHNG , LEPSELTER MARTIN P

IPC: C23C26/00 , H01L21/00 , H01L23/485 , H01L29/00 , H01L29/872

CPC classification number: H01L29/872 , C23C26/00 , H01L21/00 , H01L23/485 , H01L29/00 , H01L2924/0002 , Y10S428/929 , Y10S428/934 , Y10S428/938 , Y10T428/12528 , Y10T428/1259 , Y10T428/12611 , Y10T428/12778 , Y10T428/12812 , Y10T428/12889 , Y10T428/12896 , H01L2924/00

9.

发明授权
Electric field controlled semiconductor device 失效
Title translation: 电场控制半导体器件

公开(公告)号：US3102230A

公开(公告)日：1963-08-27

申请号：US3280160

申请日：1960-05-31

Applicant: BELL TELEPHONE LABOR INC

Inventor： DAWON KAHNG

IPC: H01L23/29 , H01L29/00

CPC classification number: H01L23/291 , H01L29/00 , H01L2924/0002 , H01L2924/3011 , H01L2924/00

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