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公开(公告)号：US09236530B2
公开(公告)日：2016-01-12
申请号：US13431834
申请日：2012-03-27
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16
摘要： A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.
摘要翻译： 一种在Ga面c面（Al，Ga，In）N基板上使用具有大于至少0.35度朝向m方向的晶面的c面表面提供（Al，Ga，In）N薄膜的方法。 发光器件形成在光滑（Al，Ga，In）N薄膜上。 在光滑表面上制造的器件表现出改进的性能。
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公开(公告)号：US20130075770A1
公开(公告)日：2013-03-28
申请号：US13431834
申请日：2012-03-27
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16
摘要： A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.
摘要翻译： 一种在Ga面c面（Al，Ga，In）N基板上使用具有大于至少0.35度朝向m方向的晶面的c面表面提供（Al，Ga，In）N薄膜的方法。 发光器件形成在光滑（Al，Ga，In）N薄膜上。 在光滑表面上制造的器件表现出改进的性能。
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3.发明授权Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface 有权部分或完全松弛的合金上的半极性或非极性氮化物器件在异质界面处具有失配位错公开(公告)号：US09159553B2
公开(公告)日：2015-10-13
申请号：US12861532
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC分类号： H01S5/00 , H01L21/02 , B82Y20/00 , H01L33/00 , H01S5/32 , H01S5/343 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
摘要翻译： 具有松散晶格常数的无位错高质量模板，通过空间限制异质界面周围的错配位错制造。 这可以用作高In组合设备的模板层。 具体地说，本发明制备了高质量的InGaN模板（In组成为约5-10％），并且可以在这些模板上生长比其它模板高得多的In-InGaN量子阱（QW）（或多量子阱（MQW）） 有可能
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4.发明申请SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE 有权部分或完全放松的合金的二极体氮化物在异质结中具有杂质偏离公开(公告)号：US20110064103A1
公开(公告)日：2011-03-17
申请号：US12861532
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
摘要翻译： 具有松散晶格常数的无位错高质量模板，通过空间限制异质界面周围的错配位错制造。 这可以用作高In组合设备的模板层。 具体地说，本发明制备了高质量的InGaN模板（In组成为约5-10％），并且可以在这些模板上生长比其它模板高得多的In-InGaN量子阱（QW）（或多量子阱（MQW）） 有可能
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公开(公告)号：US09646827B1
公开(公告)日：2017-05-09
申请号：US13593128
申请日：2012-08-23
申请人： Arpan Chakraborty , Anurag Tyagi
发明人： Arpan Chakraborty , Anurag Tyagi
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02658 , H01L33/0075
摘要： Disclosed is a method for processing GaN based substrate material for manufacturing light-emitting diodes, lasers, and other types of devices. In various embodiments, a GaN substrate is exposed to nitrogen and hydrogen at a high temperature. This process causes the surface of the GaN substrate to anneal and become smooth. Then other processes, such as growing epitaxial layers over the surface of GaN substrate, can be performed over the smooth surface of the GaN substrate.
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6.发明授权Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations 有权通过部分或完全松弛的具有失配位错的铝铟镓氮层，在半极性氮化物量子阱中进行各向异性应变控制公开(公告)号：US08481991B2
公开(公告)日：2013-07-09
申请号：US12861652
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC分类号： H01L29/66
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
摘要： An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
摘要翻译： 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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7.发明申请ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 有权通过部分或完全放松的铝氮化镓氮化物层与杂质分离的二氧化氮量子阱中的各向异性应变控制公开(公告)号：US20110062415A1
公开(公告)日：2011-03-17
申请号：US12861652
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
摘要： An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
摘要翻译： 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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公开(公告)号：US09024349B2
公开(公告)日：2015-05-05
申请号：US11656759
申请日：2007-01-22
申请人： Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
发明人： Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
CPC分类号： H01L33/62 , H01L23/3114 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/501 , H01L33/507 , H01L33/508 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
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9.发明授权Gallium-nitride-on-handle substrate materials and devices and method of manufacture 有权镓氮化物处理衬底材料和器件及其制造方法公开(公告)号：US08786053B2
公开(公告)日：2014-07-22
申请号：US13012674
申请日：2011-01-24
IPC分类号： H01L29/06 , H01L31/0304 , H01L31/0352 , H01L31/036
CPC分类号： H01L33/32 , H01L21/6835 , H01L21/76254 , H01L24/29 , H01L24/83 , H01L29/02 , H01L29/0692 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/50 , H01L2221/68327 , H01L2221/6835 , H01L2221/68381 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2224/83193 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/00014 , H01L2924/00
摘要： A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.
摘要翻译： 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。
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10.发明授权Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices 有权大面积的非极性或半极性的含镓和氮的衬底和所产生的器件公开(公告)号：US08492185B1
公开(公告)日：2013-07-23
申请号：US13548931
申请日：2012-07-13
IPC分类号： H01L21/00
CPC分类号： H01L21/02395 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/0075
摘要： A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.
摘要翻译： 描述了制造具有高质量，低堆垛层错密度和相对低的位错密度的大面积非极性或半极性GaN晶片的方法。 晶圆可用作后续体积生长的晶种，也可用作LED和激光二极管的基板。
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