公开(公告)号：US20120187412A1

公开(公告)日：2012-07-26

申请号：US13012674

申请日：2011-01-24

申请人： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

发明人： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

IPC分类号： H01L29/20

CPC分类号： H01L33/32 ,  H01L21/6835 ,  H01L21/76254 ,  H01L24/29 ,  H01L24/83 ,  H01L29/02 ,  H01L29/0692 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/50 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

摘要： A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

摘要翻译： 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。

公开(公告)号：US08786053B2

公开(公告)日：2014-07-22

申请号：US13012674

申请日：2011-01-24

申请人： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

发明人： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

IPC分类号： H01L29/06 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/036

CPC分类号： H01L33/32 ,  H01L21/6835 ,  H01L21/76254 ,  H01L24/29 ,  H01L24/83 ,  H01L29/02 ,  H01L29/0692 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/50 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

摘要： A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

摘要翻译： 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。

公开(公告)号：US08492185B1

公开(公告)日：2013-07-23

申请号：US13548931

申请日：2012-07-13

申请人： Mark P. D'Evelyn ,  James Speck ,  William Houck ,  Mathew Schmidt ,  Arpan Chakraborty

发明人： Mark P. D'Evelyn ,  James Speck ,  William Houck ,  Mathew Schmidt ,  Arpan Chakraborty

IPC分类号： H01L21/00

CPC分类号： H01L21/02395 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0075

摘要： A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.

摘要翻译： 描述了制造具有高质量，低堆垛层错密度和相对低的位错密度的大面积非极性或半极性GaN晶片的方法。 晶圆可用作后续体积生长的晶种，也可用作LED和激光二极管的基板。

公开(公告)号：US08740413B1

公开(公告)日：2014-06-03

申请号：US13328978

申请日：2011-12-16

申请人： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

发明人： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

IPC分类号： F21V9/00 ,  F21V9/16 ,  F21V21/00 ,  H01J63/04 ,  H01L33/00

CPC分类号： H01L33/504 ,  F21K9/00 ,  F21K9/232 ,  F21V29/70 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

摘要翻译： 光学装置包括具有至少两个辐射源的光源和由辐射源激发的至少两层波长改变材料，所述辐射源以至少两个预定波长发射辐射。 实施例包括被配置为发射第一波长的辐射的第一多个n个辐射源。 所述第一多个辐射源接近配置成发射第二波长的辐射的第二多个m个辐射源，所述第二波长比所述第一波长短。 m和n之间的比率是预定的。 所公开的光学装置还包括至少两个波长转换层，使得第一波长转换层被配置为吸收由第二辐射源发射的辐射的一部分，以及第二波长转换层，其被配置为吸收由第二波长转换层发射的辐射的一部分 第二辐射源。