发明授权
US09159553B2 Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface
有权
部分或完全松弛的合金上的半极性或非极性氮化物器件在异质界面处具有失配位错
- 专利标题： Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface
- 专利标题（中）： 部分或完全松弛的合金上的半极性或非极性氮化物器件在异质界面处具有失配位错
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申请号： US12861532申请日： 2010-08-23
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公开(公告)号： US09159553B2公开(公告)日： 2015-10-13
- 发明人: Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
- 申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Gates & Cooper LLP
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01L21/02 ; B82Y20/00 ; H01L33/00 ; H01S5/32 ; H01S5/343 ; H01L33/06 ; H01L33/12 ; H01L33/16 ; H01L33/32 ; H01S5/20 ; H01S5/22
摘要：
A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
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