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    Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
    1.
    发明授权
    Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof 有权
    适用于窄间距应用的半导体器件及其制造方法

    公开(公告)号：US09530898B2

    公开(公告)日：2016-12-27

    申请号：US14515767

    申请日：2014-10-16

    申请人： APPLIED MATERIALS, INC.

    发明人： Udayan Ganguly ,  Yoshitaka Yokota ,  Jing Tang ,  Sunderraj Thirupapuliyur ,  Christopher Sean Olsen ,  Shiyu Sun ,  Tze Wing Poon ,  Wei Liu ,  Johanes Swenberg ,  Vicky U. Nguyen ,  Swaminathar Srinivasan ,  Jacob Newman

    IPC分类号： H01L29/788 ,  H01L21/67 ,  H01L21/762 ,  H01L27/115

    CPC分类号： H01L29/788 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76232 ,  H01L27/11521

    摘要： Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

    摘要翻译： 适用于窄间距应用的半导体器件及其制造方法在本文中描述。 在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。 在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

    Thermal reactor with improved gas flow distribution
    3.
    发明授权
    Thermal reactor with improved gas flow distribution 有权
    具有改善气流分布的热反应器

    公开(公告)号：US08888916B2

    公开(公告)日：2014-11-18

    申请号：US14088013

    申请日：2013-11-22

    申请人： Applied Materials, Inc.

    发明人： Ming-Kuei (Michael) Tseng ,  Norman L. Tam ,  Yoshitaka Yokota ,  Agus S. Tjandra ,  Robert Navasca ,  Mehran Behdjat ,  Sundar Ramamurthy ,  Kedarnath Sangam ,  Alexander N. Lerner

    IPC分类号： C23C16/00 ,  H01L21/00 ,  H01L21/67 ,  F27D7/06

    CPC分类号： H01L21/67115 ,  F27D7/06 ,  H01L21/67017 ,  H01L21/67098

    摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

    摘要翻译： 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件， 室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上 ，并且排气组件限定了被配置为延长处理量的排气量。

    REMOTE PLASMA RADICAL TREATMENT OF SILICON OXIDE
    4.
    发明申请
    REMOTE PLASMA RADICAL TREATMENT OF SILICON OXIDE 有权
    氧化硅远程等离子体处理

    公开(公告)号：US20140227888A1

    公开(公告)日：2014-08-14

    申请号：US14255471

    申请日：2014-04-17

    申请人： Applied Materials, Inc.

    发明人： CHRISTOPHER S. OLSEN ,  Yoshitaka Yokota

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02164 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3211 ,  H01L27/11524

    摘要： Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, the method includes generating a plasma comprising nitrogen-containing radicals in a remote plasma applicator, flowing the plasma comprising nitrogen-containing radicals into a processing region of the processing chamber where a semiconductor device is disposed, wherein the semiconductor device has a substrate comprising an oxide layer formed thereon, exposing an exposed surface of the oxide layer to the nitrogen-containing radicals, and incorporating nitrogen in the exposed surface of the oxide layer of the substrate.

    摘要翻译： 本文描述的实施例通常涉及用于制造闪存设备的方法。 在一个实施例中，该方法包括在远程等离子体施加器中产生包含含氮自由基的等离子体，其将包含含氮自由基的等离子体流入设置半导体器件的处理室的处理区域，其中半导体器件具有 包含其上形成的氧化物层的衬底，将氧化物层的暴露表面暴露于含氮自由基，并在衬底的氧化物层的暴露表面中引入氮。

    REMOTE PLASMA RADICAL TREATMENT OF SILICON OXIDE
    5.
    发明申请
    REMOTE PLASMA RADICAL TREATMENT OF SILICON OXIDE 有权
    氧化硅远程等离子体处理

    公开(公告)号：US20130109164A1

    公开(公告)日：2013-05-02

    申请号：US13658594

    申请日：2012-10-23

    申请人： Applied Materials, Inc.

    发明人： Christopher S. Olsen ,  Yoshitaka Yokota

    IPC分类号： H01L21/285 ,  H01L21/318

    CPC分类号： H01L21/02164 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3211 ,  H01L27/11524

    摘要： Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, the method includes generating a plasma comprising nitrogen-containing radicals in a remote plasma applicator, flowing the plasma comprising nitrogen-containing radicals into a processing region of the processing chamber where a semiconductor device is disposed, wherein the semiconductor device has a substrate comprising an oxide layer formed thereon, exposing an exposed surface of the oxide layer to the nitrogen-containing radicals, and incorporating nitrogen in the exposed surface of the oxide layer of the substrate.

    摘要翻译： 本文描述的实施例通常涉及用于制造闪存设备的方法。 在一个实施例中，该方法包括在远程等离子体施加器中产生包含含氮自由基的等离子体，其将包含含氮自由基的等离子体流入设置半导体器件的处理室的处理区域，其中半导体器件具有 包含其上形成的氧化物层的衬底，将氧化物层的暴露表面暴露于含氮自由基，并在衬底的氧化物层的暴露表面中引入氮。

    Method and apparatus for single step selective nitridation
    7.
    发明授权
    Method and apparatus for single step selective nitridation 有权
    单步选择性氮化的方法和装置

    公开(公告)号：US09023700B2

    公开(公告)日：2015-05-05

    申请号：US14299788

    申请日：2014-06-09

    申请人： Applied Materials, Inc.

    发明人： Udayan Ganguly ,  Theresa Kramer Guarini ,  Matthew Scott Rogers ,  Yoshitaka Yokota ,  Johanes S. Swenberg ,  Malcolm J. Bevan

    IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/28 ,  H01L27/115 ,  H01L29/788 ,  H01L29/423

    CPC分类号： H01L21/02247 ,  H01L21/02362 ,  H01L21/28202 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/7881

    摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

    摘要翻译： 提供了半导体衬底选择性一步氮化的方法和装置。 通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。 可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。 远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成 区域和基板支撑。