公开(公告)号：US09530898B2

公开(公告)日：2016-12-27

申请号：US14515767

申请日：2014-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Udayan Ganguly ,  Yoshitaka Yokota ,  Jing Tang ,  Sunderraj Thirupapuliyur ,  Christopher Sean Olsen ,  Shiyu Sun ,  Tze Wing Poon ,  Wei Liu ,  Johanes Swenberg ,  Vicky U. Nguyen ,  Swaminathar Srinivasan ,  Jacob Newman

IPC: H01L29/788 ,  H01L21/67 ,  H01L21/762 ,  H01L27/115

CPC classification number: H01L29/788 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76232 ,  H01L27/11521

Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract translation: 适用于窄间距应用的半导体器件及其制造方法在本文中描述。 在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。 在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。