知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

11 records (took 0.021 seconds)

    ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING
    3.
    发明申请
    ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
    在化学机械抛光中相同板上变化厚度的多个基板的端点控制

    公开(公告)号：US20140222188A1

    公开(公告)日：2014-08-07

    申请号：US14246801

    申请日：2014-04-07

    Applicant: Applied Materials, Inc.

    Inventor： Alain Duboust ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang ,  Stephen Jew ,  David H. Mai ,  Huyen Tran

    IPC: G06F17/50

    CPC classification number: B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

    Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

    Abstract translation: 第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。 在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力 更大的预期需要的抛光时间。 在初始周期之后，对第一基板和第二基板施加压力。

    Chemical mechanical polishing with applied magnetic field
    8.
    发明授权
    Chemical mechanical polishing with applied magnetic field 有权

    公开(公告)号：US11787008B2

    公开(公告)日：2023-10-17

    申请号：US17127065

    申请日：2020-12-18

    Applicant: Applied Materials, Inc.

    Inventor： Xingfeng Wang ,  Jianshe Tang ,  Feng Q. Liu ,  David M. Gage ,  Stephen Jew

    IPC: B24B37/04 ,  B24B57/02 ,  B24B37/20 ,  B24B37/10

    CPC classification number: B24B37/046 ,  B24B37/105 ,  B24B37/20 ,  B24B57/02

    Abstract: A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate-receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.

Patent Agency Ranking