Large area self imaging lithography based on broadband light source

    公开(公告)号:US11036145B2

    公开(公告)日:2021-06-15

    申请号:US16230667

    申请日:2018-12-21

    Abstract: Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

    Large area self imaging lithography based on broadband light source

    公开(公告)号:US11829073B2

    公开(公告)日:2023-11-28

    申请号:US17306527

    申请日:2021-05-03

    CPC classification number: G03F7/70408 G03F7/2006 G03F7/7005 G03F7/70191

    Abstract: Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

    METHODS OF PARALLEL TRANSFER OF MICRO-DEVICES USING TREATMENT

    公开(公告)号:US20220005863A1

    公开(公告)日:2022-01-06

    申请号:US17479985

    申请日:2021-09-20

    Abstract: A method of transferring micro-devices includes selectively treating a first adhesive layer to form a treated portion and an untreated portion while micro-devices are attached the first adhesive layer. A second adhesive layer on a second surface is placed to abut the micro-devices. The first adhesive layer is exposed to illumination in a region that overlaps at least some of the treated portion and at least some of the untreated portion. Exposing the first adhesive layer to illumination neutralizes the at least some of the untreated portion to create a neutralized portion that is less adhesive than an exposed area of the treated portion. The first surface is separated from the second surface such that micro-devices in the treated portion remain attached to the first surface and micro-devices in the neutralized portion are attached to the second surface and separate from the first surface.

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