公开(公告)号：US06671235B1

公开(公告)日：2003-12-30

申请号：US09536867

申请日：2000-03-27

Applicant: Andrew M. Hawryluk ,  Robert D. Hempstead ,  David A. Markle

Inventor： Andrew M. Hawryluk ,  Robert D. Hempstead ,  David A. Markle

IPC: G11B1300

CPC classification number: G11B5/82 ,  G11B5/012 ,  G11B5/59633 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/0021

Abstract: A method of, and apparatus for, defining disk tracks in magnetic recording media. The track-writing apparatus (20) is capable of forming tracks (340) with a track width (TW) and track spaces (350) with a space width (SW) on a magnetic media disk (70) having an upper surface (70S), wherein the disk comprises a magnetic medium with a thermal diffusion length (X). The apparatus comprises, in order along an optical axis (A1), a laser light source (30) capable of providing a pulsed laser light beam (B1), a light pipe (32), and illumination shaping optical system (40) that provides substantially uniform illumination over an exposure region (ER), and a phase plate (60) having a phase grating (210) with a grating period (p), arranged proximate and substantially parallel to the upper surface of the disk so as to form an periodic irradiance distribution (380) at the surface of the disk when the phase plate is illuminated with the exposure region. The irradiance distribution is capable of heating one or more regions of the disk to beyond the Curie temperature of the magnetic media. A method of defining the disk tracks using Spatial Period Division (SPD) with the track writing apparatus described above by forming closed annular demagnetized spaces in a periodic magnetized pattern (300) formed in the disk is also disclosed.

Abstract translation: 一种用于在磁记录介质中定义磁盘轨迹的方法和设备。 轨道写入装置（20）能够在具有上表面（70S）的磁性介质盘（70）上形成具有轨道宽度（TW）的轨道（340）和具有空间宽度（SW）的轨道空间（350） ），其中盘包括具有热扩散长度（X）的磁性介质。 该装置沿着光轴（A1）依次包括能够提供脉冲激光束（B1）的激光源（30），光管（32）和照明整形光学系统（40），其提供 以及具有光栅周期（p）的相位光栅（210）的相位板（60），该相位板（60）布置成与盘的上表面接近且基本平行，从而形成 当相位板用曝光区域照亮时，盘的表面处的周期性辐照度分布（380）。 辐照度分布能够将盘的一个或多个区域加热到超过磁性介质的居里温度。 还公开了通过在形成在盘中的周期性磁化图案（300）中形成闭合的环形消磁空间来定义使用上述轨道写入装置的空间周期分割（SPD）的盘轨迹的方法。

公开(公告)号：US06531681B1

公开(公告)日：2003-03-11

申请号：US09536869

申请日：2000-03-27

Applicant: David A. Markle ,  Andrew M. Hawryluk ,  Hwan J. Jeong

Inventor： David A. Markle ,  Andrew M. Hawryluk ,  Hwan J. Jeong

IPC: B23K2606

CPC classification number: G03F7/70558 ,  B23K26/0738 ,  G03F7/70225 ,  G03F7/70391 ,  H01L21/67115

Abstract: Radiant energy line source(s) (e.g., laser diode array) and anamorphic relay receiving radiant energy therefrom and directing that energy to a substrate in a relatively uniform line image. The line image is scanned with respect to the substrate for treatment thereof. Good uniformity is provided even when the line source is uneven. Optionally, delimiting aperture(s) located in the anamorphic relay focal plane and a subsequent imaging relay are includeable to permit substrate exposure in strips with boundaries between adjacent strips within scribe lines between circuits. An anamorphic relay focal plane mask with a predetermined pattern can be used to define portions of the substrate to be treated with the substrate and mask scanning motions synchronized with each other. Control of source output, and position/speed of the substrate, with respect to the line image, allows uniform dose and required magnitude over the substrate.

Abstract translation: 辐射能量线源（例如，激光二极管阵列）和变形继电器从其接收辐射能，并将能量引导到相对均匀的线图像中的衬底。 相对于基板扫描线图像以进行处理。 即使线源不均匀，也能提供良好的均匀性。 可选地，定位在变形继电器焦平面中的孔径和随后的成像继电器可包括允许基板暴露在条带之间，其中在电路之间的划线内的相邻条带之间具有边界。 可以使用具有预定图案的变形继电器焦平面掩模来限定待用基板的部分，并且掩模扫描运动彼此同步。 源极输出的控制和基板的位置/速度相对于线图像，允许在衬底上均匀的剂量和所需的幅度。

公开(公告)号：US07514305B1

公开(公告)日：2009-04-07

申请号：US11476275

申请日：2006-06-28

Applicant: Andrew M. Hawryluk ,  Boris Grek ,  David A. Markle

Inventor： Andrew M. Hawryluk ,  Boris Grek ,  David A. Markle

IPC: H01L21/00

CPC classification number: H01L21/2636 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract translation: 提供了用于改善用于处理半导体衬底的光束图像的强度分布的方法和装置。 可以产生和操纵至少一个光子束以形成具有强度分布的图像，其具有用于热处理基板的表面的延伸的均匀区域。 可以跨越表面扫描图像以加热衬底表面的至少一部分以在预定的停留时间内实现期望的温度。 这种处理可以由于束的均匀部分中包含的大量能量而实现高效率。

公开(公告)号：US06825101B1

公开(公告)日：2004-11-30

申请号：US09536927

申请日：2000-03-27

Applicant: Andrew M. Hawryluk ,  David A. Markle ,  Somit Talwar

Inventor： Andrew M. Hawryluk ,  David A. Markle ,  Somit Talwar

IPC: H01L2120

CPC classification number: H01L21/324 ,  H01J2237/316 ,  H01L21/263 ,  H01L21/2636 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513

Abstract: A method of this invention includes annealing at least one region of a substrate with a short pulse of particles. The particles can be electrons, protons, alpha particles, other atomic or molecular ions or neutral atoms and molecules. The substrate can be composed of a semiconductor material, for example. The particles can include dopant atoms such as p-type dopant atoms such as boron (B), aluminum (Al), gallium (Ga), or indium (In), and n-type dopant atomic species including arsenic (As), phosphorus (P), or antimony (Sb). The particles can also include silicon (Si) or germanium (Ge) atoms or ionized gas atoms including those of hydrogen (He), oxygen (O), nitrogen (N), neon (Ne), argon (Ar), or krypton (Kr). The particles can be used to anneal dopant atoms previously implanted into the substrate. Alternatively, the particle species can be chosen to include the desired implant dopant, the energy of the particle may be chosen to achieve the desired implant depth, and the energy, dose and pulse duration may be chosen to anneal the implanted region during the pulse. This embodiment of the method performs implantation and activation in a single step. If no change in the electrical state of the substrate is required, the particles can include silicon (Si), and germanium (Ge) atoms.

Abstract translation: 本发明的方法包括用短脉冲的颗粒退火衬底的至少一个区域。 颗粒可以是电子，质子，α粒子，其他原子或分子离子或中性原子和分子。 例如，基板可以由半导体材料构成。 颗粒可以包括诸如硼（B），铝（Al），镓（Ga）或铟（In）的p型掺杂剂原子的掺杂剂原子，以及包括砷（As），磷 （P）或锑（Sb）。 这些颗粒还可以包括硅（Si）或锗（Ge）原子或包括氢（He），氧（O），氮（N），氖（Ne），氩（Ar）或氪 Kr）。 颗粒可以用于退火以前植入衬底中的掺杂剂原子。 或者，可以选择粒子物种以包括所需的注入掺杂剂，可以选择粒子的能量以实现期望的注入深度，并且可以选择能量，剂量和脉冲持续时间以在脉冲期间退火注入区域。 该方法的该实施例在单个步骤中执行植入和激活。 如果不需要基板的电气状态的变化，则颗粒可以包括硅（Si）和锗（Ge）原子。

公开(公告)号：US06326219B2

公开(公告)日：2001-12-04

申请号：US09286492

申请日：1999-04-05

Applicant: David A. Markle ,  Somit Talwar ,  Andrew M. Hawryluk

Inventor： David A. Markle ,  Somit Talwar ,  Andrew M. Hawryluk

IPC: H01L2100

CPC classification number: H01L29/66575 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/28079 ,  H01L21/324

Abstract: The invention is directed to methods for determining the wavelength, pulse length and other important characteristics of radiant energy used to anneal or to activate the source and drain regions of an integrated transistor device which has been doped through implantation of dopant ions, for example. In general, the radiant energy pulse is determined to have a wavelength from 450 to 900 nanometers, a pulse length of 0.1 to 50 nanoseconds, and an exposure energy dose of from 0.1 to 1.0 Joules per square centimeter. A radiant energy pulse of the determined wavelength, pulse length and energy dose is directed onto the source and drain regions to trigger activation. In cases where the doped region has been rendered amorphous, activation requires crystallization using the crystal structure at the boundaries as a seed. In this case the radiant energy pulse causes the source and drain regions to crystallize with the same crystallographic orientation as the underlying substrate with the dopant ions incorporated into the crystalline lattice so that the source and drain regions are activated. To enhance absorption of the radiant energy used for annealing the doped regions, an anti-reflective layer can be formed over the doped regions before exposure. The radiant energy can be generated by a laser or other relatively intense, pulsed, radiant energy source. Selection of the source should be based on efficiency, the ability to distribute energy uniformly over an extended area and the ability to accurately control the energy content of a single pulse.

Abstract translation: 本发明涉及用于确定用于退火或激活已经通过注入掺杂剂离子掺杂的集成晶体管器件的源极和漏极区域的辐射能的波长，脉冲长度和其它重要特性的方法。 通常，辐射能脉冲被确定为具有450-900纳米的波长，0.1至50纳秒的脉冲长度和0.1至1.0焦耳/平方厘米的曝光能量。 所确定的波长，脉冲长度和能量剂量的辐射能量脉冲被引导到源极和漏极区域以触发激活。 在掺杂区域变为无定形的情况下，活化需要使用边界处的晶体结构作为晶种进行结晶。 在这种情况下，辐射能量脉冲导致源极和漏极区域以与底部衬底相同的晶体取向结晶，掺杂剂离子结合到晶格中，使得源极和漏极区域被激活。 为了增强用于退火掺杂区域的辐射能的吸收，可以在曝光之前在掺杂区域上形成抗反射层。 辐射能可以由激光或其他相对强烈的脉冲辐射能源产生。 源的选择应基于效率，均匀分布在扩展区域上的能力以及准确控制单脉冲能量含量的能力。

公开(公告)号：US06479821B1

公开(公告)日：2002-11-12

申请号：US09659094

申请日：2000-09-11

Applicant: Andrew M. Hawryluk ,  Somit Talwar ,  Yun Wang ,  David A. Markle ,  Michael O. Thompson

Inventor： Andrew M. Hawryluk ,  Somit Talwar ,  Yun Wang ,  David A. Markle ,  Michael O. Thompson

IPC: G03G516

CPC classification number: H01L21/268 ,  G03G5/16

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g., solid) to a second phase (e.g., liquid or vapor) at a phase transition temperature (TP). During this phase change, the phase switch layer absorbs heat but does not significantly change temperature. This limits the temperature of the absorber layer and the process region since both are close to the phase change layer.

Abstract translation: 一种用于控制从辐射脉冲（10）暴露于工件（W）的处理区域（30）的热量的方法，装置和系统，其可以是扫描光束（B）的形式， ，使用热感应相位层（60）。 本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。 吸收层的一部分覆盖工艺区域。 吸收层吸收辐射并将吸收的辐射转化成热。 相位开关层沉积在吸收层的上方或下方。 相位开关层可以包括一个或多个薄膜层，并且可以包括绝热层和相变层。 由于它们非常接近，覆盖处理区域的相位开关层的部分具有接近处理区域的温度的温度。 在相转变温度（TP）下，相位开关层的相位从第一相（例如，固体）变为第二相（例如，液体或蒸气）。 在该相变期间，相开关层吸热，但不会明显改变温度。 这限制了吸收层和工艺区域的温度，因为它们都接近于相变层。

公开(公告)号：US08559014B2

公开(公告)日：2013-10-15

申请号：US12924244

申请日：2010-09-23

Applicant: Hwan J. Jeong ,  David A. Markle

Inventor： Hwan J. Jeong ,  David A. Markle

IPC: G01B9/02

CPC classification number: G02B27/58 ,  A61B6/5282

Abstract: High-resolution, common-path interferometric imaging systems and methods are described, wherein a light source generates and directs light toward a sample from different directions. An optical imaging system collects the resultant scattered and unscattered components. A variable phase shifting system adjusts the relative phase of the components. The interfered components are sensed by an image sensing system. The process is repeated multiple times with different phase shifts to form corresponding multiple electronic signals representative of raw sample images, which are processed by a signal processor to form a processed image. Multiple processed images, each corresponding to a different illumination azimuth angle, are combined to extend the system resolution.

Abstract translation: 描述了高分辨率，公共路径干涉成像系统和方法，其中光源从不同的方向产生并指向样品。 光学成像系统收集所得的散射和未散射的部件。 可变相移系统调整组件的相对相位。 受干扰的部件由图像感测系统感测。 该过程以不同的相移重复多次以形成表示原始样本图像的对应的多个电子信号，其由信号处理器处理以形成经处理的图像。 组合多个处理后的图像，每个对应于不同的照明方位角，以扩展系统分辨率。

公开(公告)号：US08314360B2

公开(公告)日：2012-11-20

申请号：US13164700

申请日：2011-06-20

Applicant: Boris Grek ,  David A. Markle

Inventor： Boris Grek ,  David A. Markle

IPC: H01L21/268

CPC classification number: B23K26/0853 ,  B23K26/0006 ,  B23K26/352 ,  B23K26/40 ,  B23K26/703 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56

Abstract: Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some instances, the image may be formed from a beam traveling over at least a portion of the central region so that no portion thereof directly illuminates any portion of the edge when the image is scanned across the periphery region. The substrate may be rotated 180° or the beam direction may be switched after part of the scanning operation has been completed.

Abstract translation: 提供了用于处理具有上表面的基板的装置和方法，所述上表面包括中心区域，周边区域和与周边区域相邻的边缘。 在衬底的上表面上扫描具有足以实现衬底的热处理的强度的图像。 图像扫描几何形状允许以基本均匀的温度处理基板的中心区域而不损坏外边缘。 在一些情况下，图像可以由在中心区域的至少一部分上行进的光束形成，使得当图像跨过周边区域扫描图像时，它的任何部分都不直接照亮边缘的任何部分。 基板可以旋转180°，或者在部分扫描操作完成之后可以切换光束方向。

公开(公告)号：US07767927B2

公开(公告)日：2010-08-03

申请号：US11129971

申请日：2005-05-16

Applicant: David A. Markle

Inventor： David A. Markle

IPC: G01J5/54 ,  B23K26/00

CPC classification number: G01K11/125 ,  G01J5/0003 ,  G01J5/58 ,  G01J2005/0077

Abstract: Methods and apparatus for remotely measuring temperature of a specular surface. Method takes two measurements of P-polarized radiation emitted at or near Brewster angle from the surface. First measurement (SA) collects and detects first amount of radiation emitted directly from a surface portion using a collection optical system. Second measurement (SB) includes first amount of radiation and adds quantity of radiation collected at or near at/near Brewster angle and reflected from the surface with a retro optical system with a round-trip transmission t2 that retro-reflects a quantity of radiation received from surface portion back to same surface portion where it reflects and combines with first amount of radiation collected by collection optical system. Measurements SA and SB and t2 are used to determine surface emissivity (ξ). Calibration curve is used that relates ratio of the first measurement SA to surface emissivity (SA/ξ), to surface temperature. Surface temperature determined from SA/ξ by calibration curve.

Abstract translation: 用于远程测量镜面温度的方法和装置。 方法采用两个来自表面布鲁斯特角附近发射的P偏振辐射的测量。 第一测量（SA）使用收集光学系统收集并检测直接从表面部分发射的辐射量。 第二测量（SB）包括第一量的辐射，并增加在布鲁斯特角附近或附近收集的辐射量，并用具有回射反射接收的辐射量的往复传输t2的复古光学系统从表面反射 从表面部分返回到其反射的相同表面部分，并与由收集光学系统收集的第一量的辐射组合。 测量SA和SB和t2用于确定表面发射率（＆xgr。）。 使用校准曲线，其将第一测量SA与表面发射率（SA / xgr）的比率与表面温度相关联。 表面温度由SA /＆xgr; 通过校准曲线。

公开(公告)号：US07763828B2

公开(公告)日：2010-07-27

申请号：US10653625

申请日：2003-09-02

Applicant: Somit Talwar ,  David A. Markle

Inventor： Somit Talwar ,  David A. Markle

IPC: B23K26/00 ,  B23K26/02

CPC classification number: B23K26/0604 ,  B23K26/073 ,  B23K2101/40

Abstract: A method and apparatus for performing laser thermal processing (LTP) using a two-dimensional array of laser diodes to form a line image, which is scanned across a substrate. The apparatus includes a two-dimensional array of laser diodes, the radiation from which is collimated in one plane using a cylindrical lens array, and imaged onto the substrate as a line image using an anomorphic, telecentric optical imaging system. The apparatus also includes a scanning substrate stage for supporting a substrate to be LTP processed. The laser diode radiation beam is incident on the substrate at angles at or near the Brewster's angle for the given substrate material and the wavelength of the radiation beam, which is linearly P-polarized. The use of a two-dimensional laser diode array allows for a polarized radiation beam of relatively high energy density to be delivered to the substrate, thereby allowing for LTP processing with good uniformity, reasonably short dwell times, and thus reasonably high throughput.

Abstract translation: 一种使用激光二极管的二维阵列进行激光热处理（LTP）的方法和装置，以形成跨越衬底扫描的线像。 该装置包括激光二极管的二维阵列，使用柱面透镜阵列在一个平面中准直的辐射，并使用异常远心光学成像系统作为线图像成像到基板上。 该装置还包括用于支撑待处理LTP的衬底的扫描衬底台。 对于给定的衬底材料，激光二极管辐射束以布鲁斯特角度或附近的角度入射到衬底上，并且是线性P偏振的辐射束的波长。 使用二维激光二极管阵列允许将相对较高能量密度的偏振辐射束输送到衬底，从而允许LTP处理具有良好的均匀性，合理短的停留时间，并因此允许相当高的通量。