公开(公告)号：US10288582B2

公开(公告)日：2019-05-14

申请号：US14993871

申请日：2016-01-12

Applicant: Analog Devices Global

Inventor： Helen Berney ,  William Allan Lane ,  Patrick Martin McGuinness ,  Thomas G. O'Dwyer

IPC: G01N27/414

Abstract: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.

公开(公告)号：US20170279444A1

公开(公告)日：2017-09-28

申请号：US15216498

申请日：2016-07-21

Applicant: Analog Devices Global

Inventor： Edward John Coyne ,  Patrick Martin McGuinness ,  William Allan Lane ,  Lawrence O'Sullivan

IPC: H03K17/567 ,  H02P27/06 ,  H02M7/217 ,  H01L27/06 ,  H02M7/537

CPC classification number: H03K17/567 ,  H01L27/0623 ,  H02M7/217 ,  H02M7/537 ,  H02P27/06 ,  H03K17/06 ,  H03K2017/066

Abstract: A combined isolator and power switch is disclosed. Such devices are useful in isolating low voltage components such as control compilers from motors or generators working at high voltages. The combined isolator and power switch includes circuits to transfer internal power from its low voltage side to the switch driver circuits on the high voltage side. The combined isolator and switch is compact and easy to use.

公开(公告)号：US09484739B2

公开(公告)日：2016-11-01

申请号：US14496839

申请日：2014-09-25

Applicant: ANALOG DEVICES GLOBAL

Inventor： Edward John Coyne ,  John Twomey ,  Seamus P. Whiston ,  David J. Clarke ,  Donal P. McAuliffe ,  William Allan Lane ,  Stephen Denis Heffernan ,  Brian A. Moane ,  Brian Michael Sweeney ,  Patrick Martin McGuinness

IPC: H02H3/20 ,  H02H9/04 ,  H01L27/02 ,  H02H7/16

CPC classification number: H02H9/044 ,  H01L27/0259 ,  H02H7/16

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract translation: 提供一种保护装置，其展现了一纳秒或更少的转动时间。 这样一种器件为集成电路提供了防止静电放电事件的增强保护。 这反过来又降低了使用设备故障的风险。 保护装置可以包括连接在要保护的节点和放电路径之间的双极晶体管结构。

公开(公告)号：US11193967B2

公开(公告)日：2021-12-07

申请号：US16743878

申请日：2020-01-15

Applicant: Analog Devices Global

Inventor： Alan J. O'Donnell ,  David Aherne ,  Javier Alejandro Salcedo ,  David J. Clarke ,  John A. Cleary ,  Patrick Martin McGuinness ,  Albert C. O'Grady

IPC: G01R31/00 ,  G08B21/18 ,  H02H1/00 ,  H02H9/04 ,  H02H3/20 ,  H05K1/02 ,  H02H9/00 ,  H01L27/02 ,  H02H3/04

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

公开(公告)号：US10557881B2

公开(公告)日：2020-02-11

申请号：US15801132

申请日：2017-11-01

Applicant: Analog Devices Global

Inventor： Alan J. O'Donnell ,  David Aherne ,  Javier Alejandro Salcedo ,  David J. Clarke ,  John A. Cleary ,  Patrick Martin McGuinness ,  Albert C. O'Grady

IPC: G01R31/00 ,  G08B21/18 ,  H02H1/00 ,  H02H9/04 ,  H02H3/20 ,  H05K1/02 ,  H02H9/00

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

公开(公告)号：US10148263B2

公开(公告)日：2018-12-04

申请号：US15216498

申请日：2016-07-21

Applicant: Analog Devices Global Unlimited Company

Inventor： Edward John Coyne ,  Patrick Martin McGuinness ,  William Allan Lane ,  Laurence O'Sullivan

IPC: H01L29/66 ,  H03K17/795 ,  H03K19/003 ,  H03K17/567 ,  H01L27/06 ,  H02M7/217 ,  H02M7/537 ,  H02P27/06 ,  H03K17/06

Abstract: A combined isolator and power switch is disclosed. Such devices are useful in isolating low voltage components such as control compilers from motors or generators working at high voltages. The combined isolator and power switch includes circuits to transfer internal power from its low voltage side to the switch driver circuits on the high voltage side. The combined isolator and switch is compact and easy to use.

公开(公告)号：US20190195825A1

公开(公告)日：2019-06-27

申请号：US16329664

申请日：2017-08-29

Applicant: ANALOG DEVICES GLOBAL

Inventor： Alfonso Berduque ,  Helen Berney ,  William Allan Lane ,  Raymond J. Speer ,  Brendan Cawley ,  Donal McAuliffe ,  Patrick Martin McGuinness

IPC: G01N27/407 ,  G01N27/30

CPC classification number: G01N27/407 ,  G01N27/304

Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.

公开(公告)号：US20200158771A1

公开(公告)日：2020-05-21

申请号：US16743878

申请日：2020-01-15

Applicant: Analog Devices Global

Inventor： Alan J. O'Donnell ,  David Aherne ,  Javier Alejandro Salcedo ,  David J. Clarke ,  John A. Cleary ,  Patrick Martin McGuinness ,  Albert C. O'Grady

IPC: G01R31/00 ,  G08B21/18 ,  H02H1/00 ,  H02H9/04

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

公开(公告)号：US20160094026A1

公开(公告)日：2016-03-31

申请号：US14496839

申请日：2014-09-25

Applicant: ANALOG DEVICES GLOBAL

Inventor： Edward John Coyne ,  John Twomey ,  Seamus P. Whiston ,  David J. Clarke ,  Donal P. McAuliffe ,  William Allan Lane ,  Stephen Denis Heffernan ,  Brian A. Moane ,  Brian Michael Sweeney ,  Patrick Martin McGuinness

IPC: H02H9/04 ,  H02H7/16

CPC classification number: H02H9/044 ,  H01L27/0259 ,  H02H7/16

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract translation: 提供一种保护装置，其展现了一纳秒或更少的转动时间。 这样一种器件为集成电路提供了防止静电放电事件的增强保护。 这反过来又降低了使用设备故障的风险。 保护装置可以包括连接在要保护的节点和放电路径之间的双极晶体管结构。

公开(公告)号：US20190293692A1

公开(公告)日：2019-09-26

申请号：US16360356

申请日：2019-03-21

Applicant: Analog Devices Global Unlimited Company

Inventor： David J. Clarke ,  Stephen Denis Heffernan ,  Nijun Wei ,  Alan J. O'Donnell ,  Patrick Martin McGuinness ,  Shaun Bradley ,  Edward John Coyne ,  David Aherne ,  David M. Boland

IPC: G01R19/165 ,  G01R31/00 ,  G01R31/28 ,  H01L23/525 ,  H01L27/02 ,  H01L23/60 ,  H01L23/62 ,  H02H9/04

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;