公开(公告)号：US11075178B2

公开(公告)日：2021-07-27

申请号：US16685032

申请日：2019-11-15

申请人： Ampleon Netherlands B.V.

发明人： Gutta Venkata ,  Iouri Volokhine

IPC分类号： H03F3/14 ,  H01L23/66 ,  H01L23/13 ,  H01L23/498 ,  H01L23/00 ,  H01P3/16 ,  H01P5/08 ,  H03F1/56 ,  H03F3/21 ,  H05B6/48 ,  H04B1/04

摘要： An example embodiment relates to a radiofrequency (RF) power amplifier pallet, and further relates to an electronic device that includes such a pallet. The RF power amplifier pallet may include a coupled line coupler that includes a first line segment and a second line segment that is electromagnetically coupled to the first line segment. A first end of the first line segment may be electrically connected to an output of an RF amplifying unit. The RF power amplifier pallet may further include a dielectric filled waveguide having an end section of the first dielectric substrate, an end section of the second dielectric substrate, and a plurality of metal wall segments covering the end sections of the first and second dielectric layers. The plurality of metal wall segments may be arranged spaced apart from the first line segment and electrically connected to a first end of the second line segment.

公开(公告)号：US20160351513A1

公开(公告)日：2016-12-01

申请号：US15165317

申请日：2016-05-26

申请人： Ampleon Netherlands B.V.

发明人： Yi Zhu ,  Josephus Van Der Zanden ,  Iouri Volokhine ,  Rob Mathijs Heeres

IPC分类号： H01L23/66

CPC分类号： H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6666 ,  H01L2223/6672 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1421 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/30111 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/451 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A package is provided. The package comprises a die and an impedance matching network. The die has a first terminal and a second terminal. The impedance matching network is coupled to the second terminal and comprises a first inductor and a first capacitor. The first inductor comprises first bond wire connections coupled between the second terminal and a first bond pad on the die, and second bond wire connections coupled between the first bond pad and a second bond pad coupled to the first capacitor.

摘要翻译： 提供一个包装。 封装包括管芯和阻抗匹配网络。 模具具有第一端子和第二端子。 阻抗匹配网络耦合到第二终端并且包括第一电感器和第一电容器。 第一电感器包括耦合在第二端子和管芯上的第一接合焊盘之间的第一接合线连接，以及耦合在第一接合焊盘和耦合到第一电容器的第二接合焊盘之间的第二接合线连接。

公开(公告)号：US12009792B2

公开(公告)日：2024-06-11

申请号：US17272814

申请日：2019-09-03

申请人： Ampleon Netherlands B.V.

发明人： Vittorio Cuoco ,  Jos Van Der Zanden ,  Yi Zhu ,  Iouri Volokhine

IPC分类号： H03F3/24 ,  H01L23/00 ,  H01L23/66 ,  H03F3/195

CPC分类号： H03F3/245 ,  H01L23/66 ,  H01L24/49 ,  H03F3/195 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2224/04042 ,  H01L2224/49175 ,  H03F2200/451

摘要： Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.

公开(公告)号：US09941227B2

公开(公告)日：2018-04-10

申请号：US15165317

申请日：2016-05-26

申请人： Ampleon Netherlands B.V.

发明人： Yi Zhu ,  Josephus Van Der Zanden ,  Iouri Volokhine ,  Rob Mathijs Heeres

IPC分类号： H01L23/66 ,  H01L23/48 ,  H03F3/191 ,  H03H7/38 ,  H01L23/00 ,  H03F1/56 ,  H03F3/195

CPC分类号： H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6666 ,  H01L2223/6672 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1421 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/30111 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/451 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A package is provided. The package comprises a die and an impedance matching network. The die has a first terminal and a second terminal. The impedance matching network is coupled to the second terminal and comprises a first inductor and a first capacitor. The first inductor comprises first bond wire connections coupled between the second terminal and a first bond pad on the die, and second bond wire connections coupled between the first bond pad and a second bond pad coupled to the first capacitor.

公开(公告)号：US20210257977A1

公开(公告)日：2021-08-19

申请号：US17272814

申请日：2019-09-03

申请人： Ampleon Netherlands B.V.

发明人： Vittorio Cuoco ,  Jos Van Der Zanden ,  Yi Zhu ,  Iouri Volokhine

IPC分类号： H03F3/24 ,  H03F3/195 ,  H01L23/66 ,  H01L23/00

摘要： Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.

公开(公告)号：US20200168571A1

公开(公告)日：2020-05-28

申请号：US16685032

申请日：2019-11-15

申请人： Ampleon Netherlands B.V.

发明人： Gutta Venkata ,  Iouri Volokhine

IPC分类号： H01L23/66 ,  H03F3/21 ,  H01L23/498 ,  H01L23/13 ,  H01P5/08 ,  H01P3/16 ,  H01L23/00 ,  H03F1/56 ,  H05B6/48

摘要： An example embodiment relates to a radiofrequency (RF) power amplifier pallet, and further relates to an electronic device that includes such a pallet. The RF power amplifier pallet may include a coupled line coupler that includes a first line segment and a second line segment that is electromagnetically coupled to the first line segment. A first end of the first line segment may be electrically connected to an output of an RF amplifying unit. The RF power amplifier pallet may further include a dielectric filled waveguide having an end section of the first dielectric substrate, an end section of the second dielectric substrate, and a plurality of metal wall segments covering the end sections of the first and second dielectric layers. The plurality of metal wall segments may be arranged spaced apart from the first line segment and electrically connected to a first end of the second line segment.