公开(公告)号：US12009792B2

公开(公告)日：2024-06-11

申请号：US17272814

申请日：2019-09-03

申请人： Ampleon Netherlands B.V.

发明人： Vittorio Cuoco ,  Jos Van Der Zanden ,  Yi Zhu ,  Iouri Volokhine

IPC分类号： H03F3/24 ,  H01L23/00 ,  H01L23/66 ,  H03F3/195

CPC分类号： H03F3/245 ,  H01L23/66 ,  H01L24/49 ,  H03F3/195 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2224/04042 ,  H01L2224/49175 ,  H03F2200/451

摘要： Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.

公开(公告)号：US20210257977A1

公开(公告)日：2021-08-19

申请号：US17272814

申请日：2019-09-03

申请人： Ampleon Netherlands B.V.

发明人： Vittorio Cuoco ,  Jos Van Der Zanden ,  Yi Zhu ,  Iouri Volokhine

IPC分类号： H03F3/24 ,  H03F3/195 ,  H01L23/66 ,  H01L23/00

摘要： Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.