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    SEMICONDUCTOR DEVICE WITH REDISTRIBUTION LAYERS FORMED UTILIZING DUMMY SUBSTRATES
    2.
    发明申请
    SEMICONDUCTOR DEVICE WITH REDISTRIBUTION LAYERS FORMED UTILIZING DUMMY SUBSTRATES 审中-公开
    具有重新分配层的半导体器件形成使用的DUMMY衬底

    公开(公告)号：US20150221601A1

    公开(公告)日：2015-08-06

    申请号：US14449654

    申请日：2014-08-01

    Applicant: Amkor Technology, Inc.

    Inventor： Jin Young Kim ,  Ji Young Chung ,  Doo Hyun Park ,  Choon Heung Lee

    IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56

    Abstract: A semiconductor device with redistribution layers formed utilizing dummy substrates is disclosed and may include forming a first redistribution layer on a first dummy substrate, forming a second redistribution layer on a second dummy substrate, electrically connecting a semiconductor die to the first redistribution layer, electrically connecting the first redistribution layer to the second redistribution layer, and removing the dummy substrates. The first redistribution layer may be electrically connected to the second redistribution layer utilizing a conductive pillar. An encapsulant material may be formed between the first and second redistribution layers. Side portions of one of the first and second redistribution layers may be covered with encapsulant. A surface of the semiconductor die may be in contact with the second redistribution layer. The dummy substrates may be in panel form. One of the dummy substrates may be in panel form and the other in unit form.

    Abstract translation: 公开了一种使用虚拟衬底形成的具有再分配层的半导体器件，其可以包括在第一虚拟衬底上形成第一再分配层，在第二虚设衬底上形成第二再分布层，将半导体管芯电连接到第一再分配层，电连接 第一再分配层到第二再分配层，并且去除虚设基板。 第一再分布层可以利用导电柱电连接到第二再分配层。 可以在第一和第二再分配层之间形成密封剂材料。 第一和第二再分布层之一的侧面部分可以用密封剂覆盖。 半导体管芯的表面可以与第二再分配层接触。 虚拟基板可以是面板形式。 虚拟基板中的一个可以是面板形式，另一个是单元形式。

    SEMICONDUCTOR PACKAGE AND FABRICATING METHOD THEREOF
    3.
    发明申请
    SEMICONDUCTOR PACKAGE AND FABRICATING METHOD THEREOF 有权
    半导体封装及其制造方法

    公开(公告)号：US20150041975A1

    公开(公告)日：2015-02-12

    申请号：US14456226

    申请日：2014-08-11

    Applicant: Amkor Technology, Inc.

    Inventor： Ji Young Chung ,  Choon Heung Lee ,  Glenn Rinne ,  Byong Jin Kim

    IPC: H01L23/31 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498

    CPC classification number: H01L25/50 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2924/00014

    Abstract: A semiconductor package includes a first package comprising a circuit board and a first semiconductor die mounded on the circuit board, and a second package comprising a mounting board. At least one second semiconductor die may be mounted on the mounting board, and one or more leads may be electrically connected to the mounting board and/or the second semiconductor die. An adhesion member may bond the first package to the second package, and an encapsulant may encapsulate the first package and the second package. the circuit board, the mounting board, and the one or more leads may be arranged to surround the first semiconductor die and the second semiconductor die, and the plurality of leads may be electrically connected to the circuit board and to a constant potential or ground, to reduce the effects of external electromagnetic interference upon the semiconductor package.

    Abstract translation: 半导体封装包括第一封装，包括电路板和安置在电路板上的第一半导体管芯，第二封装包括安装板。 至少一个第二半导体管芯可以安装在安装板上，并且一个或多个引线可以电连接到安装板和/或第二半导体管芯。 粘合构件可以将第一包装物粘合到第二包装，并且密封剂可以封装第一包装和第二包装。 电路板，安装板和一个或多个引线可以布置成围绕第一半导体管芯和第二半导体管芯，并且多个引线可以电连接到电路板和恒定电位或接地， 以减少外部电磁干扰对半导体封装的影响。

    Semiconductor device using EMC wafer support system and fabricating method thereof
    4.
    发明授权
    Semiconductor device using EMC wafer support system and fabricating method thereof 有权

    公开(公告)号：US10388643B2

    公开(公告)日：2019-08-20

    申请号：US15490091

    申请日：2017-04-18

    Applicant: Amkor Technology, Inc.

    Inventor： Jin Young Kim ,  Doo Hyun Park ,  Ju Hoon Yoon ,  Seong Min Seo ,  Glenn Rinne ,  Choon Heung Lee

    IPC: H01L25/00 ,  H01L25/065 ,  H01L23/31 ,  H01L21/56

    Abstract: Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.

    Semiconductor package and manufacturing method thereof
    5.
    发明授权
    Semiconductor package and manufacturing method thereof 有权

    公开(公告)号：US10115705B2

    公开(公告)日：2018-10-30

    申请号：US15211534

    申请日：2016-07-15

    Applicant: Amkor Technology, Inc.

    Inventor： Jin Young Kim ,  No Sun Park ,  Yoon Joo Kim ,  Choon Heung Lee ,  Jin Han Kim ,  Seung Jae Lee ,  Se Woong Cha ,  Sung Kyu Kim ,  Glenn Rinne

    IPC: H01L25/04 ,  H01L21/822 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L25/00

    Abstract: A semiconductor package and manufacturing method thereof are disclosed and may include a first semiconductor device comprising a first bond pad on a first surface of the first semiconductor device, a first encapsulant material surrounding side edges of the first semiconductor device, and a redistribution layer (RDL) formed on the first surface of the first semiconductor device and on a first surface of the encapsulant material. The RDL may electrically couple the first bond pad to a second bond pad formed above the first surface of the encapsulant material. A second semiconductor device comprising a third bond pad on a first surface of the second semiconductor device may face the first surface of the first semiconductor device and be electrically coupled to the first bond pad on the first semiconductor device. The first surface of the first semiconductor device may be coplanar with the first surface of the encapsulant material.

    SEMICONDUCTOR DEVICE WITH REDISTRIBUTION LAYERS FORMED UTILIZING DUMMY SUBSTRATES
    7.
    发明申请
    SEMICONDUCTOR DEVICE WITH REDISTRIBUTION LAYERS FORMED UTILIZING DUMMY SUBSTRATES 审中-公开

    公开(公告)号：US20200335461A1

    公开(公告)日：2020-10-22

    申请号：US16921522

    申请日：2020-07-06

    Applicant: Amkor Technology, Inc.

    Inventor： Jin Young Kim ,  Ji Young Chung ,  Doo Hyun Park ,  Choon Heung Lee

    IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L25/10 ,  H01L21/683

    Abstract: A semiconductor device with redistribution layers formed utilizing dummy substrates is disclosed and may include forming a first redistribution layer on a first dummy substrate, forming a second redistribution layer on a second dummy substrate, electrically connecting a semiconductor die to the first redistribution layer, electrically connecting the first redistribution layer to the second redistribution layer, and removing the dummy substrates. The first redistribution layer may be electrically connected to the second redistribution layer utilizing a conductive pillar. An encapsulant material may be formed between the first and second redistribution layers. Side portions of one of the first and second redistribution layers may be covered with encapsulant. A surface of the semiconductor die may be in contact with the second redistribution layer. The dummy substrates may be in panel form. One of the dummy substrates may be in panel form and the other in unit form.

    Semiconductor device with redistribution layers formed utilizing dummy substrates
    8.
    发明授权
    Semiconductor device with redistribution layers formed utilizing dummy substrates 有权

    公开(公告)号：US10707181B2

    公开(公告)日：2020-07-07

    申请号：US14449654

    申请日：2014-08-01

    Applicant: Amkor Technology, Inc.

    Inventor： Jin Young Kim ,  Ji Young Chung ,  Doo Hyun Park ,  Choon Heung Lee

    IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L25/10 ,  H01L21/683 ,  H01L21/48

    Abstract: A semiconductor device with redistribution layers formed utilizing dummy substrates is disclosed and may include forming a first redistribution layer on a first dummy substrate, forming a second redistribution layer on a second dummy substrate, electrically connecting a semiconductor die to the first redistribution layer, electrically connecting the first redistribution layer to the second redistribution layer, and removing the dummy substrates. The first redistribution layer may be electrically connected to the second redistribution layer utilizing a conductive pillar. An encapsulant material may be formed between the first and second redistribution layers. Side portions of one of the first and second redistribution layers may be covered with encapsulant. A surface of the semiconductor die may be in contact with the second redistribution layer. The dummy substrates may be in panel form. One of the dummy substrates may be in panel form and the other in unit form.

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