公开(公告)号：US07508518B2

公开(公告)日：2009-03-24

申请号：US12078172

申请日：2008-03-27

申请人： Akitake Tamura ,  Kaoru Fujihara ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Kaoru Fujihara ,  Teruyuki Hayashi

IPC分类号： G01N21/00 ,  G01N21/55

CPC分类号： G01N15/06 ,  G01N1/42 ,  G01N2015/0693

摘要： The present invention relates to a particle measuring method for irradiating light to a surface of a substrate to scatter the light so as to measure a condition of particles on the substrate based on the scattered light. The particle measuring method according to the present invention comprises the steps of: heating a certain liquid to obtain a steam; supplying the steam onto a substrate so that a content of the steam is absorbed by each particle, while a temperature of the substrate is maintained in such a manner that the steam does not condense on the substrate; cooling the substrate before the particle dries so that the content absorbed by the particle is solidified, while preventing generation of solidified substance on regions of the surface of the substrate to which no particle adheres; and irradiating light to the substrate to scatter the light and detecting the scattered light, under a condition in which the content absorbed by the particle has been solidified.

摘要翻译： 本发明涉及一种用于将光照射到基板的表面以散射光以便基于散射光测量基板上的颗粒的状态的颗粒测量方法。 根据本发明的颗粒测量方法包括以下步骤：加热某些液体以获得蒸汽; 将蒸汽供给到基板上，使得蒸汽的含量被每个颗粒吸收，同时保持基板的温度使得蒸汽不会在基板上冷凝; 在颗粒干燥之前冷却基板，使得由颗粒吸收的内容物固化，同时防止在没有颗粒粘附的基材表面的区域上产生固化物质; 并且在颗粒吸收的内容物固化的条件下，向基板照射光以散射光并检测散射光。

公开(公告)号：US20080239283A1

公开(公告)日：2008-10-02

申请号：US12078172

申请日：2008-03-27

申请人： Akitake Tamura ,  Kaoru Fujihara ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Kaoru Fujihara ,  Teruyuki Hayashi

IPC分类号： G01N1/00

CPC分类号： G01N15/06 ,  G01N1/42 ,  G01N2015/0693

摘要： The present invention relates to a particle measuring method for irradiating light to a surface of a substrate to scatter the light so as to measure a condition of particles on the substrate based on the scattered light. The particle measuring method according to the present invention comprises the steps of: heating a certain liquid to obtain a steam; supplying the steam onto a substrate so that a content of the steam is absorbed by each particle, while a temperature of the substrate is maintained in such a manner that the steam does not condense on the substrate; cooling the substrate before the particle dries so that the content absorbed by the particle is solidified, while preventing generation of solidified substance on regions of the surface of the substrate to which no particle adheres; and irradiating light to the substrate to scatter the light and detecting the scattered light, under a condition in which the content absorbed by the particle has been solidified.

摘要翻译： 本发明涉及一种用于将光照射到基板的表面以散射光以便基于散射光测量基板上的颗粒的状态的颗粒测量方法。 根据本发明的颗粒测量方法包括以下步骤：加热某些液体以获得蒸汽; 将蒸汽供给到基板上，使得蒸汽的含量被每个颗粒吸收，同时保持基板的温度使得蒸汽不会在基板上冷凝; 在颗粒干燥之前冷却基板，使得由颗粒吸收的内容物固化，同时防止在没有颗粒粘附的基材表面的区域上产生固化物质; 并且在颗粒吸收的内容物固化的条件下，向基板照射光以散射光并检测散射光。

公开(公告)号：US08008211B2

公开(公告)日：2011-08-30

申请号：US12343968

申请日：2008-12-24

申请人： Akitake Tamura ,  Teruyuki Hayashi ,  Kaoru Fujihara

发明人： Akitake Tamura ,  Teruyuki Hayashi ,  Kaoru Fujihara

IPC分类号： H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521

摘要： A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.

摘要翻译： 图案形成方法包括：（a）在第一掩模图案的掩模部分的侧壁上形成一对沉积物，在其上形成薄膜，蚀刻它以留下沉积物，并在沉积物之间暴露第二层膜的顶表面; （b）通过去除掩模部分形成对应于沉积物的掩模部分形成的第二掩模图案，等离子体蚀刻第二层膜并除去沉积物; （c）在其上形成薄膜，并对其进行蚀刻以在掩模部分的彼此面对的侧壁上留下沉积物，并在沉积物之间露出第三层膜，同时在相邻的掩模部分之间留下沉积物; 和（d）通过去除第二掩模部分在其上形成凹槽，并蚀刻掉第三层膜。

公开(公告)号：US20090206253A1

公开(公告)日：2009-08-20

申请号：US12368645

申请日：2009-02-10

申请人： Misako SAITO ,  Teruyuki Hayashi ,  Akitake Tamura ,  Kaoru Fujihara

发明人： Misako SAITO ,  Teruyuki Hayashi ,  Akitake Tamura ,  Kaoru Fujihara

IPC分类号： G01N23/00

CPC分类号： G01N23/2251 ,  G01N2223/6116

摘要： In a substrate inspection method, it is inspected whether the metal electrode is electrically connected to the conductive film by radiating electron beams onto a surface of the substrate to detect the number of secondary electrons emitted therefrom. The method includes placing the substrate onto a mounting table; inspecting the metal electrode by radiating electron beams onto an area of the substrate including the metal electrode at a first acceleration voltage and detecting secondary electrons emitted from the metal electrode; and radiating electron beams onto an area of the substrate not including the metal electrode at a second acceleration voltage. The second acceleration voltage is set such that a difference between the number of electrons entering the insulation film and the number of secondary electrons emitted from the insulation film is smaller at the second acceleration voltage than at the first acceleration voltage.

摘要翻译： 在基板检查方法中，通过将电子束辐射到基板的表面上来检查金属电极是否与导电膜电连接以检测从其发射的二次电子的数量。 该方法包括将基板放置在安装台上; 通过以第一加速电压将电子束辐射到包括金属电极的基板的区域上并检测从金属电极发射的二次电子来检查金属电极; 并且以第二加速电压将电子束辐射到不包括金属电极的基板的区域上。 第二加速电压被设定为使得进入绝缘膜的电子数与从绝缘膜发射的二次电子的数量之间的差在第二加速电压时比在第一加速电压下小。

公开(公告)号：US20100154712A1

公开(公告)日：2010-06-24

申请号：US12639410

申请日：2009-12-16

申请人： Akitake Tamura ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Teruyuki Hayashi

IPC分类号： C23C16/00

CPC分类号： C23C14/243 ,  C23C14/246

摘要： A source gas generating device includes a liquid accommodation unit that accommodates therein the liquid source obtained by liquefying the solid source; a first energy feed unit that supplies energy to raise a temperature of a first region within the liquid accommodation unit to a melting point of the solid source; a second energy feed unit that supplies energy to raise a temperature of a second region within the liquid accommodation unit to a temperature higher than the temperature of the first region, the second region being distanced apart from the first region via a liquid flowing region; a solid source feed unit that supplies the solid source into the first region of the liquid accommodation unit; and an outlet port that discharges the source gas produced by the evaporation of the liquid source within the second region of the liquid accommodation unit.

摘要翻译： 源气体发生装置包括：液体容纳单元，其容纳通过液化固体源获得的液体源; 第一能量供给单元，其提供能量以将所述液体容纳单元内的第一区域的温度升高到所述固体源的熔点; 第二能量馈送单元，其提供能量以将所述液体容纳单元内的第二区域的温度升高到比所述第一区域的温度高的温度，所述第二区域经由液体流动区域与所述第一区域分开; 固体源进料单元，其将固体源供应到液体容纳单元的第一区域; 以及排出由液体容纳单元的第二区域内的液体源的蒸发而产生的源气体的排出口。

公开(公告)号：US20090194233A1

公开(公告)日：2009-08-06

申请号：US11663182

申请日：2006-06-23

申请人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

IPC分类号： C23C16/455 ,  B32B15/04 ,  C23C16/40 ,  C23C16/44 ,  B05D1/36 ,  H01L21/205 ,  H01L21/306

CPC分类号： C23C16/4404 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45561 ,  Y10T428/265

摘要： A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 μm.

摘要翻译： 用于半导体处理装置的部件（10）包括限定部件形状的矩阵（10a）和覆盖矩阵的预定表面的保护膜（10c）。 保护膜（10c）基本上由选自铝，硅，铪，锆和钇的第一元素的无定形氧化物组成。 保护膜（10c）的孔隙率小于1％，厚度为1nm〜10μm。

公开(公告)号：US20120094014A1

公开(公告)日：2012-04-19

申请号：US13265678

申请日：2010-04-21

申请人： Yuji Ono ,  Tomohiko Edura ,  Teruyuki Hayashi ,  Akitake Tamura ,  Misako Saito ,  Hirotaka Kuwada ,  Shimon Otsuki

发明人： Yuji Ono ,  Tomohiko Edura ,  Teruyuki Hayashi ,  Akitake Tamura ,  Misako Saito ,  Hirotaka Kuwada ,  Shimon Otsuki

IPC分类号： B05D5/06 ,  B67D7/06 ,  C23C16/448

CPC分类号： C23C14/12 ,  C23C14/228 ,  C23C14/246

摘要： There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit.

摘要翻译： 提供了能够高度迁移率地有效地升华/熔化颗粒状有机材料的气相沉积设备和气相沉积方法。 用于通过气相沉积在基板上形成薄膜的气相沉积装置包括构造成供给材料气体的可降压材料供给装置和被配置为在基板上形成薄膜的成膜装置。 材料供给装置包括：配置为控制材料量的量控制单元和构造成使从量控制单元供给的材料蒸发的原料气体生成单元。

公开(公告)号：US20110244693A1

公开(公告)日：2011-10-06

申请号：US13163305

申请日：2011-06-17

申请人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

IPC分类号： H01L21/31 ,  C23C4/04 ,  C23C16/06

CPC分类号： C23C16/4404 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45561 ,  Y10T428/265

摘要： A component for a semiconductor processing apparatus includes a matrix defining a shape of the component, and a protection film covering a predetermined surface of the matrix. The protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film has a porosity of less than 1% and a thickness of 1 nm to 10 μm.

摘要翻译： 半导体处理装置的部件包括限定部件的形状的矩阵和覆盖矩阵的预定表面的保护膜。 保护膜基本上由选自铝，硅，铪，锆和钇的第一元素的无定形氧化物组成。 保护膜的孔隙率小于1％，厚度为1nm至10μm。

公开(公告)号：US08950999B2

公开(公告)日：2015-02-10

申请号：US12525314

申请日：2008-01-31

申请人： Akitake Tamura ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Teruyuki Hayashi

IPC分类号： H01L21/677 ,  H01L21/67

CPC分类号： H01J37/34 ,  H01J37/32522 ,  H01J37/3476 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67248 ,  H01L21/67766 ,  H01L21/67772 ,  H01L21/67778

摘要： Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.

摘要翻译： 防止任何颗粒附着在待处理基材的表面上。 提供了一种基板处理装置，其特征在于包括：传送室，用于经由设置用于容纳基板的基板容纳容器的栅极，在其之间进行基板与基板容纳容器的传送;处理室， 对基板施加特定的处理，用于将处理室与传送室连接的加载锁定室以及用于在将基板转移到传送室和装载锁定室中的至少一个的阶段的温度控制单元 ，因为刚好在其转移之前的衬底的温度高于将被转移到其中的衬底内部的温度，控制衬底的温度和温度的至少一个 室内

公开(公告)号：US20120031339A1

公开(公告)日：2012-02-09

申请号：US13262335

申请日：2010-04-02

申请人： Yuji Ono ,  Tomohiko Edura ,  Teruyuki Hayashi ,  Akitake Tamura ,  Misako Saito

发明人： Yuji Ono ,  Tomohiko Edura ,  Teruyuki Hayashi ,  Akitake Tamura ,  Misako Saito

IPC分类号： C23C16/455

CPC分类号： C23C14/12 ,  C23C14/24 ,  H01L51/001 ,  H01L51/50

摘要： There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing.

摘要翻译： 提供一种沉积头，其能够在大尺寸基板中排出具有均匀流速和等热特性的材料气体，以及用于形成均匀薄膜的常规小尺寸基板。 还提供了包括沉积头的沉积设备。 沉积头设置在用于在衬底上形成薄膜并用于将材料气体朝向衬底排出的沉积设备中。 沉积头包括外壳和设置在外壳内并且材料气体被引入的内壳。 在内壳体中，形成有将材料气体朝向基板排出的开口，在外壳的外表面或外壳与内壳之间的空间内设置加热材料气体的加热器 。