公开(公告)号：US07508518B2

公开(公告)日：2009-03-24

申请号：US12078172

申请日：2008-03-27

申请人： Akitake Tamura ,  Kaoru Fujihara ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Kaoru Fujihara ,  Teruyuki Hayashi

IPC分类号： G01N21/00 ,  G01N21/55

CPC分类号： G01N15/06 ,  G01N1/42 ,  G01N2015/0693

摘要： The present invention relates to a particle measuring method for irradiating light to a surface of a substrate to scatter the light so as to measure a condition of particles on the substrate based on the scattered light. The particle measuring method according to the present invention comprises the steps of: heating a certain liquid to obtain a steam; supplying the steam onto a substrate so that a content of the steam is absorbed by each particle, while a temperature of the substrate is maintained in such a manner that the steam does not condense on the substrate; cooling the substrate before the particle dries so that the content absorbed by the particle is solidified, while preventing generation of solidified substance on regions of the surface of the substrate to which no particle adheres; and irradiating light to the substrate to scatter the light and detecting the scattered light, under a condition in which the content absorbed by the particle has been solidified.

摘要翻译： 本发明涉及一种用于将光照射到基板的表面以散射光以便基于散射光测量基板上的颗粒的状态的颗粒测量方法。 根据本发明的颗粒测量方法包括以下步骤：加热某些液体以获得蒸汽; 将蒸汽供给到基板上，使得蒸汽的含量被每个颗粒吸收，同时保持基板的温度使得蒸汽不会在基板上冷凝; 在颗粒干燥之前冷却基板，使得由颗粒吸收的内容物固化，同时防止在没有颗粒粘附的基材表面的区域上产生固化物质; 并且在颗粒吸收的内容物固化的条件下，向基板照射光以散射光并检测散射光。

公开(公告)号：US20080239283A1

公开(公告)日：2008-10-02

申请号：US12078172

申请日：2008-03-27

申请人： Akitake Tamura ,  Kaoru Fujihara ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Kaoru Fujihara ,  Teruyuki Hayashi

IPC分类号： G01N1/00

CPC分类号： G01N15/06 ,  G01N1/42 ,  G01N2015/0693

摘要： The present invention relates to a particle measuring method for irradiating light to a surface of a substrate to scatter the light so as to measure a condition of particles on the substrate based on the scattered light. The particle measuring method according to the present invention comprises the steps of: heating a certain liquid to obtain a steam; supplying the steam onto a substrate so that a content of the steam is absorbed by each particle, while a temperature of the substrate is maintained in such a manner that the steam does not condense on the substrate; cooling the substrate before the particle dries so that the content absorbed by the particle is solidified, while preventing generation of solidified substance on regions of the surface of the substrate to which no particle adheres; and irradiating light to the substrate to scatter the light and detecting the scattered light, under a condition in which the content absorbed by the particle has been solidified.

摘要翻译： 本发明涉及一种用于将光照射到基板的表面以散射光以便基于散射光测量基板上的颗粒的状态的颗粒测量方法。 根据本发明的颗粒测量方法包括以下步骤：加热某些液体以获得蒸汽; 将蒸汽供给到基板上，使得蒸汽的含量被每个颗粒吸收，同时保持基板的温度使得蒸汽不会在基板上冷凝; 在颗粒干燥之前冷却基板，使得由颗粒吸收的内容物固化，同时防止在没有颗粒粘附的基材表面的区域上产生固化物质; 并且在颗粒吸收的内容物固化的条件下，向基板照射光以散射光并检测散射光。

公开(公告)号：US08008211B2

公开(公告)日：2011-08-30

申请号：US12343968

申请日：2008-12-24

申请人： Akitake Tamura ,  Teruyuki Hayashi ,  Kaoru Fujihara

发明人： Akitake Tamura ,  Teruyuki Hayashi ,  Kaoru Fujihara

IPC分类号： H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521

摘要： A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.

摘要翻译： 图案形成方法包括：（a）在第一掩模图案的掩模部分的侧壁上形成一对沉积物，在其上形成薄膜，蚀刻它以留下沉积物，并在沉积物之间暴露第二层膜的顶表面; （b）通过去除掩模部分形成对应于沉积物的掩模部分形成的第二掩模图案，等离子体蚀刻第二层膜并除去沉积物; （c）在其上形成薄膜，并对其进行蚀刻以在掩模部分的彼此面对的侧壁上留下沉积物，并在沉积物之间露出第三层膜，同时在相邻的掩模部分之间留下沉积物; 和（d）通过去除第二掩模部分在其上形成凹槽，并蚀刻掉第三层膜。

公开(公告)号：US20090206253A1

公开(公告)日：2009-08-20

申请号：US12368645

申请日：2009-02-10

申请人： Misako SAITO ,  Teruyuki Hayashi ,  Akitake Tamura ,  Kaoru Fujihara

发明人： Misako SAITO ,  Teruyuki Hayashi ,  Akitake Tamura ,  Kaoru Fujihara

IPC分类号： G01N23/00

CPC分类号： G01N23/2251 ,  G01N2223/6116

摘要： In a substrate inspection method, it is inspected whether the metal electrode is electrically connected to the conductive film by radiating electron beams onto a surface of the substrate to detect the number of secondary electrons emitted therefrom. The method includes placing the substrate onto a mounting table; inspecting the metal electrode by radiating electron beams onto an area of the substrate including the metal electrode at a first acceleration voltage and detecting secondary electrons emitted from the metal electrode; and radiating electron beams onto an area of the substrate not including the metal electrode at a second acceleration voltage. The second acceleration voltage is set such that a difference between the number of electrons entering the insulation film and the number of secondary electrons emitted from the insulation film is smaller at the second acceleration voltage than at the first acceleration voltage.

摘要翻译： 在基板检查方法中，通过将电子束辐射到基板的表面上来检查金属电极是否与导电膜电连接以检测从其发射的二次电子的数量。 该方法包括将基板放置在安装台上; 通过以第一加速电压将电子束辐射到包括金属电极的基板的区域上并检测从金属电极发射的二次电子来检查金属电极; 并且以第二加速电压将电子束辐射到不包括金属电极的基板的区域上。 第二加速电压被设定为使得进入绝缘膜的电子数与从绝缘膜发射的二次电子的数量之间的差在第二加速电压时比在第一加速电压下小。

公开(公告)号：US06883283B2

公开(公告)日：2005-04-26

申请号：US10103135

申请日：2002-03-22

申请人： Osamu Suenaga ,  Kazuo Yamamoto ,  Kaoru Fujihara ,  Sadao Kobayashi

发明人： Osamu Suenaga ,  Kazuo Yamamoto ,  Kaoru Fujihara ,  Sadao Kobayashi

IPC分类号： E04B5/43 ,  F16F15/02 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  E02D27/00

CPC分类号： H01L21/67196 ,  G03F7/70833 ,  G03F7/709

摘要： A semiconductor manufacturing facility has a proper strength and an anti-vibration effect. The semiconductor facility contains processing apparatuses, installation tables and an installation floor. An apparatus having a vibration source is installed on an installation table having a rigid structure. The installation table is installed on the installation floor having a floor construction including a plurality of columns, which support a floor member extending in horizontal directions. An interval of the columns is 4 m to 12 m.

摘要翻译： 半导体制造设备具有适当的强度和抗振动效果。 半导体设备包括处理设备，安装台和安装楼层。 具有振动源的装置安装在具有刚性结构的安装台上。 安装台安装在具有支撑沿水平方向延伸的地板构件的多个列的地板结构的安装地板上。 柱的间隔为4m至12m。

公开(公告)号：US20090176374A1

公开(公告)日：2009-07-09

申请号：US12343968

申请日：2008-12-24

申请人： Akitake TAMURA ,  Teruyuki Hayashi ,  Kaoru Fujihara

发明人： Akitake TAMURA ,  Teruyuki Hayashi ,  Kaoru Fujihara

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521

摘要： A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.

摘要翻译： 图案形成方法包括：（a）在第一掩模图案的掩模部分的侧壁上形成一对沉积物，在其上形成薄膜，蚀刻它以留下沉积物，并在沉积物之间暴露第二层膜的顶表面; （b）通过去除掩模部分形成对应于沉积物的掩模部分形成的第二掩模图案，等离子体蚀刻第二层膜并除去沉积物; （c）在其上形成薄膜，并对其进行蚀刻以在掩模部分的彼此面对的侧壁上留下沉积物，并在沉积物之间露出第三层膜，同时在相邻的掩模部分之间留下沉积物; 和（d）通过去除第二掩模部分在其上形成凹槽，并蚀刻掉第三层膜。

公开(公告)号：US5445521A

公开(公告)日：1995-08-29

申请号：US250379

申请日：1994-05-27

申请人： Eiji Yamaguchi ,  Kaoru Fujihara ,  Takenobu Matsuo ,  Hirofumi Kitayama

发明人： Eiji Yamaguchi ,  Kaoru Fujihara ,  Takenobu Matsuo ,  Hirofumi Kitayama

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C30B25/14 ,  F27D19/00 ,  F27D5/00

CPC分类号： C23C16/45557 ,  C23C16/4401 ,  C23C16/52 ,  C30B25/14 ,  F27D19/00 ,  F27D2019/0009 ,  F27D2019/0068

摘要： A heat treating device including a pressure detecting unit for outputting an output signal when a pressure in a heat processing furnace becomes a set value, an air release pipe having a first valve and a check valve, a differential pressure gauge shut off by a second valve in terms of pressure from the interior of the heat processing furnace, and an air feed pipe having a third valve. One ends of each of the air release pipe and the air feed pipe is connected respectively to the heat processing furnace and the other ends opened in air. In such arrangement, after processing gases are evacuated from the heat processing furnace, an inert gas is fed. Then when an internal pressure of the furnace becomes near an air pressure, the first valve is opened in response to the output signal of the pressure detecting unit to make the internal pressure of the heat processing furnace a little higher than the air pressure. When a differential pressure value of the differential pressure gauge is below a set value, the third value is opened to communicate the interior of the heat processing furnace with air through the air feed pipe. Then the cap closing the opening of the heat processing furnace is opened.

摘要翻译： 一种热处理装置，包括：当热处理炉中的压力变为设定值时输出输出信号的压力检测单元;具有第一阀和止回阀的排气管，由第二阀关闭的差压表 在来自热处理炉的内部的压力和具有第三阀的进气管。 每个排气管和供气管的一端分别连接到热处理炉，另一端在空气中敞开。 在这样的布置中，在处理气体从热处理炉抽出之后，供给惰性气体。 然后，当炉子的内部压力接近空气压力时，响应于压力检测单元的输出信号打开第一阀门，使得热处理炉的内部压力比空气压力高一点。 当差压表的差压值低于设定值时，打开第三值，以使热处理炉的内部通过供气管与空气相通。 然后关闭热处理炉的开口的盖子打开。

公开(公告)号：US08608422B2

公开(公告)日：2013-12-17

申请号：US10959197

申请日：2004-10-07

申请人： Tsuyoshi Moriya ,  Hiroshi Nagaike ,  Teruyuki Hayashi ,  Kaoru Fujihara

发明人： Tsuyoshi Moriya ,  Hiroshi Nagaike ,  Teruyuki Hayashi ,  Kaoru Fujihara

IPC分类号： H01L21/677 ,  H01L21/67 ,  C23C16/00

CPC分类号： H01L21/67069 ,  H01J2237/0048 ,  H01L21/67028

摘要： In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.

摘要翻译： 为了防止单元中的颗粒在基板处理工艺中粘附到基板上，离子发生器对颗粒进行充电。 同时，从直流电源向衬底施加与粒子的带电极性相同极性的直流电压。 为了防止在产生气体等离子体时产生颗粒，在多个阶段向上下电极施加高频电压以产生等离子体。 换句话说，在第一步骤中，将等离子体可点燃的最小高频电压施加到上电极和下电极，从而产生最小等离子体。 此后，施加的电压分级地增加以产生预定的等离子体。

公开(公告)号：US20110168330A1

公开(公告)日：2011-07-14

申请号：US13006787

申请日：2011-01-14

申请人： Hiromitsu SAKAUE ,  Takashi HORIUCHI ,  Kaoru FUJIHARA

发明人： Hiromitsu SAKAUE ,  Takashi HORIUCHI ,  Kaoru FUJIHARA

IPC分类号： H01L21/3065 ,  C23C16/50 ,  B05C13/02

CPC分类号： H01L21/67109 ,  H01L21/67201 ,  H01L21/6875

摘要： A support structure for supporting a processing target object includes a support main body that supports a weight of the processing target object and recess-shaped supporting body accommodating portions formed on a top surface of the support main body. The support structure further includes supporting bodies accommodated in the respective supporting body accommodating portions to be protruded above the top surface of the support main body. The supporting bodies are rollable in the respective supporting body accommodating portions while supporting the processing target object of which bottom surface is in contact with upper peak portions of the supporting bodies.

摘要翻译： 用于支撑加工对象物的支撑结构包括支撑主体，其支撑加工对象物的重量和形成在支撑主体的顶表面上的凹形支撑体容纳部。 支撑结构还包括容纳在相应的支撑体容纳部分中的支撑体，以在支撑主体的顶表面上方突出。 支撑体可在相应的支撑体容纳部分中滚动，同时支撑底表面与支撑体的上峰部分接触的处理对象物体。

公开(公告)号：US20050087136A1

公开(公告)日：2005-04-28

申请号：US10959197

申请日：2004-10-07

申请人： Tsuyoshi Moriya ,  Hiroshi Nagaike ,  Teruyuki Hayashi ,  Kaoru Fujihara

发明人： Tsuyoshi Moriya ,  Hiroshi Nagaike ,  Teruyuki Hayashi ,  Kaoru Fujihara

IPC分类号： B65G49/06 ,  C23C16/00 ,  H01L21/00 ,  H01L21/30 ,  H01L21/68

CPC分类号： H01L21/67069 ,  H01J2237/0048 ,  H01L21/67028

摘要： In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.

摘要翻译： 为了防止单元中的颗粒在基板处理工艺中粘附到基板上，离子发生器对颗粒进行充电。 同时，从直流电源向衬底施加与粒子的带电极性相同极性的直流电压。 为了防止在产生气体等离子体时产生颗粒，在多个阶段向上下电极施加高频电压以产生等离子体。 换句话说，在第一步骤中，将等离子体可点燃的最小高频电压施加到上电极和下电极，从而产生最小等离子体。 此后，施加的电压分级地增加以产生预定的等离子体。