发明申请
- 专利标题： PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND STORAGE MEDIUM
- 专利标题（中）： 图案形成方法，半导体器件制造设备和存储介质
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申请号： US12343968申请日： 2008-12-24
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公开(公告)号： US20090176374A1公开(公告)日： 2009-07-09
- 发明人: Akitake TAMURA , Teruyuki Hayashi , Kaoru Fujihara
- 申请人： Akitake TAMURA , Teruyuki Hayashi , Kaoru Fujihara
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-339922 20071228
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.
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