-
1.发明公开公开(公告)号：US20240347641A1
公开(公告)日：2024-10-17
申请号：US18750751
申请日：2024-06-21
申请人： Acorn Semi, LLC
IPC分类号： H01L29/786 , B82Y10/00 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/423 , H01L29/775 , H01L29/78
CPC分类号： H01L29/78618 , B82Y10/00 , H01L29/0673 , H01L29/0847 , H01L29/41725 , H01L29/41791 , H01L29/42392 , H01L29/775 , H01L29/7839 , H01L29/785 , H01L29/7851 , H01L29/78696
摘要： A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.
-
公开(公告)号：US12034078B2
公开(公告)日：2024-07-09
申请号：US17931052
申请日：2022-09-09
申请人： Acorn Semi, LLC
IPC分类号： H01L29/00 , B82Y10/00 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/423 , H01L29/775 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78618 , B82Y10/00 , H01L29/0673 , H01L29/0847 , H01L29/41725 , H01L29/41791 , H01L29/42392 , H01L29/775 , H01L29/7839 , H01L29/785 , H01L29/7851 , H01L29/78696
摘要： A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.
-
公开(公告)号：US20240030306A1
公开(公告)日：2024-01-25
申请号：US18474948
申请日：2023-09-26
申请人： Acorn Semi, LLC
IPC分类号： H01L29/47 , H01L21/285 , H01L29/04 , H01L21/283 , H01L29/45 , H01L21/324 , H01L29/161
CPC分类号： H01L29/47 , H01L21/28512 , H01L21/28518 , H01L29/045 , H01L21/283 , H01L29/456 , H01L21/324 , H01L29/161
摘要： Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.
-
公开(公告)号：US10833199B2
公开(公告)日：2020-11-10
申请号：US16693143
申请日：2019-11-22
申请人： Acorn Semi, LLC
IPC分类号： H01L29/00 , H01L29/786 , B82Y10/00 , H01L29/417 , H01L29/775 , H01L29/78 , H01L29/08 , H01L29/06 , H01L29/423
摘要： A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.
-
5.发明申请公开(公告)号：US20200091347A1
公开(公告)日：2020-03-19
申请号：US16693143
申请日：2019-11-22
申请人： Acorn Semi, LLC
IPC分类号： H01L29/786 , B82Y10/00 , H01L29/06 , H01L29/08 , H01L29/78 , H01L29/417 , H01L29/423 , H01L29/775
摘要： A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.
-
公开(公告)号：US11804533B2
公开(公告)日：2023-10-31
申请号：US18173541
申请日：2023-02-23
申请人： Acorn Semi, LLC
IPC分类号： H01L29/47 , H01L21/285 , H01L29/04 , H01L21/283 , H01L29/45 , H01L21/324 , H01L29/161
CPC分类号： H01L29/47 , H01L21/283 , H01L21/28512 , H01L21/28518 , H01L21/324 , H01L29/045 , H01L29/161 , H01L29/456
摘要： Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.
-
公开(公告)号：US20230006066A1
公开(公告)日：2023-01-05
申请号：US17931052
申请日：2022-09-09
申请人： Acorn Semi, LLC
IPC分类号： H01L29/786 , B82Y10/00 , H01L29/417 , H01L29/775 , H01L29/78 , H01L29/08 , H01L29/06 , H01L29/423
摘要： A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.
-
公开(公告)号：US20210083123A1
公开(公告)日：2021-03-18
申请号：US17091959
申请日：2020-11-06
申请人： Acorn Semi, LLC
IPC分类号： H01L29/786 , B82Y10/00 , H01L29/417 , H01L29/775 , H01L29/78 , H01L29/08 , H01L29/06 , H01L29/423
摘要： A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.
-
公开(公告)号：US20230207657A1
公开(公告)日：2023-06-29
申请号：US18173541
申请日：2023-02-23
申请人： Acorn Semi, LLC
IPC分类号： H01L29/47 , H01L21/285 , H01L29/04 , H01L21/283 , H01L29/45 , H01L21/324 , H01L29/161
CPC分类号： H01L29/47 , H01L21/283 , H01L21/324 , H01L21/28512 , H01L21/28518 , H01L29/045 , H01L29/161 , H01L29/456
摘要： Techniques for reducing the specific contact resistance of metal - semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal - group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.
-
公开(公告)号：US11610974B2
公开(公告)日：2023-03-21
申请号：US17247803
申请日：2020-12-23
申请人： Acorn Semi, LLC
IPC分类号： H01L29/47 , H01L21/285 , H01L29/04 , H01L21/283 , H01L29/45 , H01L21/324 , H01L29/161
摘要： Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.014 秒)
