公开(公告)号：US09012275B2

公开(公告)日：2015-04-21

申请号：US14094764

申请日：2013-12-02

Applicant: AU Optronics Corp.

Inventor： Chung-Tao Chen ,  Wu-Hsiung Lin ,  Po-Hsueh Chen

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/66765 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A method of forming TFT is provided. The TFT includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed on the gate insulating layer above the gate electrode. The source electrode is disposed on the gate insulating layer and the first protective pattern. The drain electrode is disposed on the gate insulating layer and the second protective pattern. The semiconductor channel layer is disposed on the gate insulating layer, the source electrode, and the drain electrode. In an extending direction from the source electrode to the drain electrode, a length of the first protective pattern is shorter than that of the source electrode, and a length of the second protective pattern is shorter than that of the drain electrode.

Abstract translation: 提供一种形成TFT的方法。 TFT包括栅电极，栅极绝缘层，第一保护图案，第二保护图案，源电极，漏电极，半导体沟道层和钝化层。 第一保护图案和第二保护图案设置在栅极电极上方的栅极绝缘层上。 源电极设置在栅绝缘层和第一保护图案上。 漏电极设置在栅绝缘层和第二保护图案上。 半导体沟道层设置在栅绝缘层，源电极和漏电极上。 在从源电极到漏电极的延伸方向上，第一保护图案的长度短于源电极的长度，并且第二保护图案的长度短于漏电极的长度。

公开(公告)号：US08865532B2

公开(公告)日：2014-10-21

申请号：US13625949

申请日：2012-09-25

Applicant: AU Optronics Corp.

Inventor： Jia-Hong Ye ,  Ssu-Hui Lu ,  Wu-Hsiung Lin ,  Chao-Chien Chiu ,  Ming-Hsien Lee ,  Chia-Tien Peng ,  Wei-Ming Huang

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L27/1255 ,  H01L27/1218 ,  H01L27/1248 ,  H01L29/78603

Abstract: A method for manufacturing an active device array substrate includes providing a flexible substrate having a transistor region and a transparent region; forming a gate electrode on the transistor region; sequentially forming a dielectric layer and a semiconductor layer to cover the gate electrode and the flexible substrate; removing a part of the semiconductor layer to form a channel layer above the gate electrode and removing a thickness of the dielectric layer disposed on the transparent region, such that a portion of the dielectric layer on the gate electrode has a first thickness, and another portion of the dielectric layer on the transparent region has a second thickness less than the first thickness; respectively forming a source electrode and a drain electrode on opposite sides of the channel layer; and forming a pixel electrode electrically connected to the drain electrode.

Abstract translation: 一种有源器件阵列衬底的制造方法，包括提供具有晶体管区域和透明区域的柔性衬底; 在晶体管区上形成栅电极; 顺序地形成介电层和半导体层以覆盖栅电极和柔性基板; 去除所述半导体层的一部分以在所述栅极电极上方形成沟道层，并且去除设置在所述透明区域上的所述电介质层的厚度，使得所述栅电极上的所述电介质层的一部分具有第一厚度， 在所述透明区域上的所述电介质层的厚度小于所述第一厚度的第二厚度; 分别在沟道层的相对侧上形成源电极和漏电极; 以及形成与漏电极电连接的像素电极。

公开(公告)号：US20140080271A1

公开(公告)日：2014-03-20

申请号：US14094764

申请日：2013-12-02

Applicant: AU Optronics Corp.

Inventor： Chung-Tao Chen ,  Wu-Hsiung Lin ,  Po-Hsueh Chen

IPC: H01L29/66

CPC classification number: H01L29/66765 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A method of forming TFT is provided. The TFT includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed on the gate insulating layer above the gate electrode. The source electrode is disposed on the gate insulating layer and the first protective pattern. The drain electrode is disposed on the gate insulating layer and the second protective pattern. The semiconductor channel layer is disposed on the gate insulating layer, the source electrode, and the drain electrode. In an extending direction from the source electrode to the drain electrode, a length of the first protective pattern is shorter than that of the source electrode, and a length of the second protective pattern is shorter than that of the drain electrode.

Abstract translation: 提供一种形成TFT的方法。 TFT包括栅电极，栅极绝缘层，第一保护图案，第二保护图案，源电极，漏电极，半导体沟道层和钝化层。 第一保护图案和第二保护图案设置在栅极电极上方的栅极绝缘层上。 源电极设置在栅绝缘层和第一保护图案上。 漏电极设置在栅绝缘层和第二保护图案上。 半导体沟道层设置在栅绝缘层，源电极和漏电极上。 在从源电极到漏电极的延伸方向上，第一保护图案的长度短于源电极的长度，并且第二保护图案的长度短于漏电极的长度。