公开(公告)号：US11143896B2

公开(公告)日：2021-10-12

申请号：US16035260

申请日：2018-07-13

Applicant: AU OPTRONICS CORP.

Inventor： Tun-Chun Yang ,  Seok-Lyul Lee ,  Wei-Ming Huang

IPC: G09G3/36 ,  G02F1/1333 ,  G06F3/041 ,  G02F1/1335 ,  G06F3/044 ,  G02F1/1343

Abstract: A touch display panel comprises a first substrate, a plurality of first sensing series and a plurality of second sensing series, wherein both the first sensing series and the second sensing series are above the first substrate, and the first sensing series and the second sensing series are crossly arranged to form a plurality of sensing series openings in between, a first insulating layer, covering the first sensing series and the second sensing series, a patterned black matrix layer, comprising a plurality of black matrix openings arranged in a matrix formation, a second insulating layer, covering the patterned black matrix layer; and a patterned common electrodes layer. The plurality of sensing series openings, the plurality of black matrix openings, and the patterned common electrode layer are overlapped.

公开(公告)号：US20160034072A1

公开(公告)日：2016-02-04

申请号：US14884769

申请日：2015-10-16

Applicant: AU Optronics Corp.

Inventor： Tun-Chun Yang ,  Seok-Lyul Lee ,  Wei-Ming Huang

IPC: G06F3/044 ,  G09G3/36 ,  G06F3/041

CPC classification number: G06F3/044 ,  G06F3/0412 ,  G06F3/0416 ,  G06F2203/04106 ,  G06F2203/04111 ,  G06F2203/04112 ,  G09G3/36

Abstract: A touch display device includes a patterned sensing electrode structure, an insulating layer and a patterned common electrode layer. The patterned sensing electrode structure is disposed on a surface of a substrate, defining a plurality of displaying regions and a light-shielding region. The patterned sensing electrode structure corresponds to the light-shielding region, and exposes the displaying regions. The insulating layer covers the patterned sensing electrode structure. The patterned common electrode layer is disposed on the insulating layer, and the patterned common electrode layer includes a plurality of electrode portions corresponding to the displaying regions and a plurality of connecting portions disposed between the adjacent electrode portions and electrically connected to the electrode portions.

Abstract translation: 触摸显示装置包括图案化的感测电极结构，绝缘层和图案化的公共电极层。 图案化的感测电极结构设置在基板的表面上，限定多个显示区域和遮光区域。 图案化感测电极结构对应于遮光区域，并使显示区域曝光。 绝缘层覆盖图案化的感测电极结构。 图案化的公共电极层设置在绝缘层上，并且图案化的公共电极层包括对应于显示区域的多个电极部分和设置在相邻的电极部分之间并且电连接到电极部分的多个连接部分。

公开(公告)号：US09122352B2

公开(公告)日：2015-09-01

申请号：US14535334

申请日：2014-11-07

Applicant: AU Optronics Corp.

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Hung-Wei Tseng ,  Cheng-Chiu Pai ,  Yu-Hsuan Li ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: G06F3/042 ,  H01L31/028 ,  G06F3/041 ,  H01L31/18 ,  H01L31/20 ,  H01L27/146

CPC classification number: G06F3/0421 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  G06F2203/04109 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/028 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/202

Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Abstract translation: 一种形成光传感器的方法包括以下步骤。 提供基板，并且在基板上形成第一电极。 第一富硅介电层形成在用于感测红外线的第一电极上，其中第一富硅介电层包括富硅氧化物层，富硅氮化物层或富硅氧氮化物层。 在第一富硅电介质层上形成第二富硅介电层，用于感测可见光束，其中第二富硅介电层包括富硅氧化物层，富硅氮化物层或硅 - 富氮氧化物层。 第二电极形成在第二富硅电介质层上。

公开(公告)号：US20150062088A1

公开(公告)日：2015-03-05

申请号：US14535334

申请日：2014-11-07

Applicant: AU Optronics Corp.

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Hung-Wei Tseng ,  Cheng-Chiu Pai ,  Yu-Hsuan Li ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: G06F3/042 ,  G06F3/041 ,  H01L31/028 ,  H01L31/18 ,  H01L31/20

CPC classification number: G06F3/0421 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  G06F2203/04109 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/028 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/202

Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Abstract translation: 一种形成光传感器的方法包括以下步骤。 提供基板，并且在基板上形成第一电极。 第一富硅介电层形成在用于感测红外线的第一电极上，其中第一富硅介电层包括富硅氧化物层，富硅氮化物层或富硅氧氮化物层。 在第一富硅电介质层上形成第二富硅介电层，用于感测可见光束，其中第二富硅介电层包括富硅氧化物层，富硅氮化物层或硅 - 富氮氧化物层。 第二电极形成在第二富硅电介质层上。

公开(公告)号：US20180321773A1

公开(公告)日：2018-11-08

申请号：US16035260

申请日：2018-07-13

Applicant: AU OPTRONICS CORP.

Inventor： Tun-Chun Yang ,  Seok-Lyul Lee ,  Wei-Ming Huang

IPC: G06F3/044 ,  G09G3/36 ,  G06F3/041

CPC classification number: G06F3/044 ,  G06F3/0412 ,  G06F3/0416 ,  G06F2203/04106 ,  G06F2203/04111 ,  G06F2203/04112 ,  G09G3/36

Abstract: A touch display panel comprises a first substrate, a plurality of first sensing series and a plurality of second sensing series, wherein both the first sensing series and the second sensing series are above the first substrate, and the first sensing series and the second sensing series are crossly arranged to form a plurality of sensing series openings in between, a first insulating layer, covering the first sensing series and the second sensing series, a patterned black matrix layer, comprising a plurality of black matrix openings arranged in a matrix formation, a second insulating layer, covering the patterned black matrix layer; and a patterned common electrodes layer. The plurality of sensing series openings, the plurality of black matrix openings, and the patterned common electrode layer are overlapped.

公开(公告)号：US08865532B2

公开(公告)日：2014-10-21

申请号：US13625949

申请日：2012-09-25

Applicant: AU Optronics Corp.

Inventor： Jia-Hong Ye ,  Ssu-Hui Lu ,  Wu-Hsiung Lin ,  Chao-Chien Chiu ,  Ming-Hsien Lee ,  Chia-Tien Peng ,  Wei-Ming Huang

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L27/1255 ,  H01L27/1218 ,  H01L27/1248 ,  H01L29/78603

Abstract: A method for manufacturing an active device array substrate includes providing a flexible substrate having a transistor region and a transparent region; forming a gate electrode on the transistor region; sequentially forming a dielectric layer and a semiconductor layer to cover the gate electrode and the flexible substrate; removing a part of the semiconductor layer to form a channel layer above the gate electrode and removing a thickness of the dielectric layer disposed on the transparent region, such that a portion of the dielectric layer on the gate electrode has a first thickness, and another portion of the dielectric layer on the transparent region has a second thickness less than the first thickness; respectively forming a source electrode and a drain electrode on opposite sides of the channel layer; and forming a pixel electrode electrically connected to the drain electrode.

Abstract translation: 一种有源器件阵列衬底的制造方法，包括提供具有晶体管区域和透明区域的柔性衬底; 在晶体管区上形成栅电极; 顺序地形成介电层和半导体层以覆盖栅电极和柔性基板; 去除所述半导体层的一部分以在所述栅极电极上方形成沟道层，并且去除设置在所述透明区域上的所述电介质层的厚度，使得所述栅电极上的所述电介质层的一部分具有第一厚度， 在所述透明区域上的所述电介质层的厚度小于所述第一厚度的第二厚度; 分别在沟道层的相对侧上形成源电极和漏电极; 以及形成与漏电极电连接的像素电极。