公开(公告)号：US09122352B2

公开(公告)日：2015-09-01

申请号：US14535334

申请日：2014-11-07

Applicant: AU Optronics Corp.

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Hung-Wei Tseng ,  Cheng-Chiu Pai ,  Yu-Hsuan Li ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: G06F3/042 ,  H01L31/028 ,  G06F3/041 ,  H01L31/18 ,  H01L31/20 ,  H01L27/146

CPC classification number: G06F3/0421 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  G06F2203/04109 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/028 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/202

Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Abstract translation: 一种形成光传感器的方法包括以下步骤。 提供基板，并且在基板上形成第一电极。 第一富硅介电层形成在用于感测红外线的第一电极上，其中第一富硅介电层包括富硅氧化物层，富硅氮化物层或富硅氧氮化物层。 在第一富硅电介质层上形成第二富硅介电层，用于感测可见光束，其中第二富硅介电层包括富硅氧化物层，富硅氮化物层或硅 - 富氮氧化物层。 第二电极形成在第二富硅电介质层上。

公开(公告)号：US20150062088A1

公开(公告)日：2015-03-05

申请号：US14535334

申请日：2014-11-07

Applicant: AU Optronics Corp.

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Hung-Wei Tseng ,  Cheng-Chiu Pai ,  Yu-Hsuan Li ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: G06F3/042 ,  G06F3/041 ,  H01L31/028 ,  H01L31/18 ,  H01L31/20

CPC classification number: G06F3/0421 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  G06F2203/04109 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/028 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/202

Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Abstract translation: 一种形成光传感器的方法包括以下步骤。 提供基板，并且在基板上形成第一电极。 第一富硅介电层形成在用于感测红外线的第一电极上，其中第一富硅介电层包括富硅氧化物层，富硅氮化物层或富硅氧氮化物层。 在第一富硅电介质层上形成第二富硅介电层，用于感测可见光束，其中第二富硅介电层包括富硅氧化物层，富硅氮化物层或硅 - 富氮氧化物层。 第二电极形成在第二富硅电介质层上。

公开(公告)号：US08865532B2

公开(公告)日：2014-10-21

申请号：US13625949

申请日：2012-09-25

Applicant: AU Optronics Corp.

Inventor： Jia-Hong Ye ,  Ssu-Hui Lu ,  Wu-Hsiung Lin ,  Chao-Chien Chiu ,  Ming-Hsien Lee ,  Chia-Tien Peng ,  Wei-Ming Huang

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L27/1255 ,  H01L27/1218 ,  H01L27/1248 ,  H01L29/78603

Abstract: A method for manufacturing an active device array substrate includes providing a flexible substrate having a transistor region and a transparent region; forming a gate electrode on the transistor region; sequentially forming a dielectric layer and a semiconductor layer to cover the gate electrode and the flexible substrate; removing a part of the semiconductor layer to form a channel layer above the gate electrode and removing a thickness of the dielectric layer disposed on the transparent region, such that a portion of the dielectric layer on the gate electrode has a first thickness, and another portion of the dielectric layer on the transparent region has a second thickness less than the first thickness; respectively forming a source electrode and a drain electrode on opposite sides of the channel layer; and forming a pixel electrode electrically connected to the drain electrode.

Abstract translation: 一种有源器件阵列衬底的制造方法，包括提供具有晶体管区域和透明区域的柔性衬底; 在晶体管区上形成栅电极; 顺序地形成介电层和半导体层以覆盖栅电极和柔性基板; 去除所述半导体层的一部分以在所述栅极电极上方形成沟道层，并且去除设置在所述透明区域上的所述电介质层的厚度，使得所述栅电极上的所述电介质层的一部分具有第一厚度， 在所述透明区域上的所述电介质层的厚度小于所述第一厚度的第二厚度; 分别在沟道层的相对侧上形成源电极和漏电极; 以及形成与漏电极电连接的像素电极。