公开(公告)号：US09012275B2

公开(公告)日：2015-04-21

申请号：US14094764

申请日：2013-12-02

Applicant: AU Optronics Corp.

Inventor： Chung-Tao Chen ,  Wu-Hsiung Lin ,  Po-Hsueh Chen

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/66765 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A method of forming TFT is provided. The TFT includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed on the gate insulating layer above the gate electrode. The source electrode is disposed on the gate insulating layer and the first protective pattern. The drain electrode is disposed on the gate insulating layer and the second protective pattern. The semiconductor channel layer is disposed on the gate insulating layer, the source electrode, and the drain electrode. In an extending direction from the source electrode to the drain electrode, a length of the first protective pattern is shorter than that of the source electrode, and a length of the second protective pattern is shorter than that of the drain electrode.

Abstract translation: 提供一种形成TFT的方法。 TFT包括栅电极，栅极绝缘层，第一保护图案，第二保护图案，源电极，漏电极，半导体沟道层和钝化层。 第一保护图案和第二保护图案设置在栅极电极上方的栅极绝缘层上。 源电极设置在栅绝缘层和第一保护图案上。 漏电极设置在栅绝缘层和第二保护图案上。 半导体沟道层设置在栅绝缘层，源电极和漏电极上。 在从源电极到漏电极的延伸方向上，第一保护图案的长度短于源电极的长度，并且第二保护图案的长度短于漏电极的长度。

公开(公告)号：US20140080271A1

公开(公告)日：2014-03-20

申请号：US14094764

申请日：2013-12-02

Applicant: AU Optronics Corp.

Inventor： Chung-Tao Chen ,  Wu-Hsiung Lin ,  Po-Hsueh Chen

IPC: H01L29/66

CPC classification number: H01L29/66765 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A method of forming TFT is provided. The TFT includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed on the gate insulating layer above the gate electrode. The source electrode is disposed on the gate insulating layer and the first protective pattern. The drain electrode is disposed on the gate insulating layer and the second protective pattern. The semiconductor channel layer is disposed on the gate insulating layer, the source electrode, and the drain electrode. In an extending direction from the source electrode to the drain electrode, a length of the first protective pattern is shorter than that of the source electrode, and a length of the second protective pattern is shorter than that of the drain electrode.

Abstract translation: 提供一种形成TFT的方法。 TFT包括栅电极，栅极绝缘层，第一保护图案，第二保护图案，源电极，漏电极，半导体沟道层和钝化层。 第一保护图案和第二保护图案设置在栅极电极上方的栅极绝缘层上。 源电极设置在栅绝缘层和第一保护图案上。 漏电极设置在栅绝缘层和第二保护图案上。 半导体沟道层设置在栅绝缘层，源电极和漏电极上。 在从源电极到漏电极的延伸方向上，第一保护图案的长度短于源电极的长度，并且第二保护图案的长度短于漏电极的长度。