知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

13 条记录 (耗时 0.02 秒)

    Estimating Deformation of a Patterning Device and/or a Change in Its Position
    2.
    发明申请
    Estimating Deformation of a Patterning Device and/or a Change in Its Position 有权
    估计图案化装置的变形和/或其位置变化

    公开(公告)号：US20170068171A1

    公开(公告)日：2017-03-09

    申请号：US15122772

    申请日：2015-03-05

    申请人： ASML Netherlands B.V. ,  ASML Holding N.V.

    发明人： Bearrach MOEST ,  Peter A. DELMASTRO ,  Johannes ONVLEE ,  Adrianus Martinus VAN DER WIELEN ,  Christopher Charles WARD

    IPC分类号： G03F7/20 ,  G01B11/14

    CPC分类号： G03F7/70616 ,  G01B11/14 ,  G03F7/70058 ,  G03F7/70775 ,  G03F7/70783 ,  G03F7/70875

    摘要： A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.

    摘要翻译： 提供了用于确定图案形成装置相对于图案形成装置的变形和/或移位位置的系统和方法。 该系统包括测量图案形成装置上的多个参考标记的相应位置的第一感测子系统和测量图案形成装置的边缘相对于支撑件的位置的第二感测子系统。 该系统还包括控制器，用于基于测量的图案形成装置上的标记的相应位置来确定图案化部分的绝对位置和绝对位置的变化，基于图案化装置的边缘确定相对位置的变化 测量边缘位置，并且估计图案形成装置相对于支撑件的位置的变化和图案形成装置的图案化部分的图案变形在一段时间内的变化。

    CONTAMINANT ANALYZING METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF
    4.
    发明申请
    CONTAMINANT ANALYZING METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF 有权

    公开(公告)号：US20230137537A1

    公开(公告)日：2023-05-04

    申请号：US17918317

    申请日：2021-04-01

    申请人： ASML Holding N.V. ,  ASML Netherlands B.V.

    发明人： Michal Emanuel PAWLOWSKI ,  Aage BENDIKSEN ,  Christopher Michael DOHAN ,  Johannes ONVLEE

    IPC分类号： G01N21/31 ,  G01N21/956 ,  G03F7/20

    摘要： An inspection system, a lithography apparatus, and an inspection method are provided. The inspection system includes an illumination system, a detection system, and processing circuitry. The illumination system generates a broadband beam and illuminates surface of an object with the broadband illumination beam. The broadband beam has a continuous spectral range. The detection system receives radiation scattered at the surface and by a structure near the surface. The detection system generates a detection signal based on an optical response to the broadband illumination beam. The processing circuitry analyzes the detection signal. The processing circuitry distinguishes between a spurious signal and a signal corresponding to a defect on the surface based on the analyzing The spurious signal is diminished for at least a portion of the continuous spectral range.

    SYSTEMS AND METHODS FOR ADJUSTING PREDICTION MODELS BETWEEN FACILITY LOCATIONS
    9.
    发明申请
    SYSTEMS AND METHODS FOR ADJUSTING PREDICTION MODELS BETWEEN FACILITY LOCATIONS 有权

    公开(公告)号：US20220197264A1

    公开(公告)日：2022-06-23

    申请号：US17601503

    申请日：2020-03-12

    申请人： ASML NETHERLANDS B.V.

    发明人： Johannes ONVLEE ,  Arnaud HUBAUX

    IPC分类号： G05B19/418

    摘要： A method for configuring a semiconductor manufacturing process, the method including: providing an initial prediction model including a plurality of model parameters to one or more remote locations; receiving at least one updated model parameter from the one or more remote locations, the at least one model parameter is updated by training the initial prediction model with local data at the one or more remote locations; determining aggregated model parameters based on the at least one updated model parameter received from the one or more remote locations; and adjusting the initial prediction model based on the aggregated model parameters, the adjusted prediction model being operable to configure the semiconductor manufacturing process.