公开(公告)号：US20040048490A1

公开(公告)日：2004-03-11

申请号：US10657416

申请日：2003-09-08

Applicant: ASM JAPAN K.K.

Inventor： Naoto Tsuji ,  Fumitoshi Ozaki ,  Satoshi Takahashi

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/3212 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684

Abstract: An interlayer insulation film for multilayer interconnect of a semiconductor integrated circuit is formed by forming a first insulation film on a substrate by plasma CVD using a silicon-containing hydrocarbon gas; and continuously forming a second insulation film on the first insulation film at a thickness less than the first insulation film in situ by plasma CVD using a silicon-containing hydrocarbon gas and an oxidizing gas. The second insulation film has a hardness of 6 GPa or higher and is used as a polishing stop layer.

Abstract translation: 通过使用含硅烃气体通过等离子体CVD法在基板上形成第一绝缘膜来形成半导体集成电路的多层互连用层间绝缘膜， 并且通过使用含硅烃气体和氧化气体的等离子体CVD在第一绝缘膜上以小于第一绝缘膜的厚度连续地形成第二绝缘膜。 第二绝缘膜的硬度为6GPa以上，用作抛光停止层。

公开(公告)号：US20040232355A1

公开(公告)日：2004-11-25

申请号：US10847127

申请日：2004-05-17

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Atsuki Fukazawa ,  Naoto Tsuji

IPC: H01J037/32

CPC classification number: H01J33/00 ,  H01J37/06

Abstract: An electron-beam irradiation apparatus includes an evacuatable filament-electron gun chamber housing a filament and an anode and having an inactive-gas inlet through which an inactive gas flows in; an evacuatable treatment chamber connected to an exhaust system; and a separation wall for separating the filament-electrode gun chamber and the treatment chamber. The separation wall has an aperture configured to pass electrons and gas therethrough from the filament-electron gun chamber.

Abstract translation: 电子束照射装置包括容纳灯丝和阳极并具有非活性气体入口的惰性气体入口的可抽出的灯丝电子枪室; 连接到排气系统的可抽空处理室; 以及用于分离灯丝电极枪室和处理室的分离壁。 分隔壁具有孔，该孔被配置为使电子和气体从灯丝电子枪室通过。

公开(公告)号：US20030181069A1

公开(公告)日：2003-09-25

申请号：US10390451

申请日：2003-03-17

Applicant: ASM JAPAN K.K.

Inventor： Naoto Tsuji ,  Yukihiro Mori ,  Satoshi Takahashi ,  Ryo Kawaguchi

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C23C16/45523 ,  C23C16/30 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633

Abstract: A method of forming an interlayer insulation film on a semiconductor substrate using plasma CVD includes introducing a source gas into a reaction chamber, applying radio-frequency power after the source gas is brought in, introducing an oxidizing gas with or without an additive gas into the reaction chamber after the completion of supplying the source gas and applying the radio-frequency power, and applying the radio-frequency power again. The concentration of the oxidizing gas may be 0.3% or higher and a processing time period by the oxidizing gas may be three seconds or longer.

Abstract translation: 使用等离子体CVD在半导体衬底上形成层间绝缘膜的方法包括将源气体引入反应室，在引入源气体之后施加射频电力，将具有或不具有添加气体的氧化气体引入到 在完成供给源气体并施加射频电力之后，再次施加射频电力的反应室。 氧化气体的浓度可以为0.3％以上，氧化气体的处理时间可以为3秒以上。

公开(公告)号：US20030192478A1

公开(公告)日：2003-10-16

申请号：US10412822

申请日：2003-04-11

Applicant: ASM JAPAN K.K.

Inventor： Naoto Tsuji ,  Ryo Kawaguchi ,  Atsuki Fukazawa ,  Rei Tanaka

IPC: C23C016/00

CPC classification number: H01J37/32082 ,  C23C16/4582 ,  C23C16/4585 ,  C23C16/5096 ,  H01L21/68735

Abstract: A plasma CVD apparatus includes a vacuum chamber, a showerhead, and a susceptor characterized in that an insulation ring is placed and embedded in a peripheral portion of the susceptor to increase the electrically effective distance between the showerhead and the susceptor, both of which functions as electrodes.

Abstract translation: 等离子体CVD装置包括真空室，喷头和基座，其特征在于，绝缘环被放置并嵌入在所述基座的周边部分中，以增加所述喷头和所述基座之间的电有效距离， 电极。