公开(公告)号：US20030181069A1

公开(公告)日：2003-09-25

申请号：US10390451

申请日：2003-03-17

Applicant: ASM JAPAN K.K.

Inventor： Naoto Tsuji ,  Yukihiro Mori ,  Satoshi Takahashi ,  Ryo Kawaguchi

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C23C16/45523 ,  C23C16/30 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633

Abstract: A method of forming an interlayer insulation film on a semiconductor substrate using plasma CVD includes introducing a source gas into a reaction chamber, applying radio-frequency power after the source gas is brought in, introducing an oxidizing gas with or without an additive gas into the reaction chamber after the completion of supplying the source gas and applying the radio-frequency power, and applying the radio-frequency power again. The concentration of the oxidizing gas may be 0.3% or higher and a processing time period by the oxidizing gas may be three seconds or longer.

Abstract translation: 使用等离子体CVD在半导体衬底上形成层间绝缘膜的方法包括将源气体引入反应室，在引入源气体之后施加射频电力，将具有或不具有添加气体的氧化气体引入到 在完成供给源气体并施加射频电力之后，再次施加射频电力的反应室。 氧化气体的浓度可以为0.3％以上，氧化气体的处理时间可以为3秒以上。