公开(公告)号：US20030181069A1

公开(公告)日：2003-09-25

申请号：US10390451

申请日：2003-03-17

Applicant: ASM JAPAN K.K.

Inventor： Naoto Tsuji ,  Yukihiro Mori ,  Satoshi Takahashi ,  Ryo Kawaguchi

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C23C16/45523 ,  C23C16/30 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633

Abstract: A method of forming an interlayer insulation film on a semiconductor substrate using plasma CVD includes introducing a source gas into a reaction chamber, applying radio-frequency power after the source gas is brought in, introducing an oxidizing gas with or without an additive gas into the reaction chamber after the completion of supplying the source gas and applying the radio-frequency power, and applying the radio-frequency power again. The concentration of the oxidizing gas may be 0.3% or higher and a processing time period by the oxidizing gas may be three seconds or longer.

Abstract translation: 使用等离子体CVD在半导体衬底上形成层间绝缘膜的方法包括将源气体引入反应室，在引入源气体之后施加射频电力，将具有或不具有添加气体的氧化气体引入到 在完成供给源气体并施加射频电力之后，再次施加射频电力的反应室。 氧化气体的浓度可以为0.3％以上，氧化气体的处理时间可以为3秒以上。

公开(公告)号：US20020160626A1

公开(公告)日：2002-10-31

申请号：US10133419

申请日：2002-04-25

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

IPC: H01L021/31

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  C08G77/00 ,  H01L2924/00

Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has nullSiR2Onull repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula SinullOnullnull1R2nullnullnullnull2(OCnH2nnull1)null wherein null is an integer of 1-3, null is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

Abstract translation: 硅氧烷聚合物绝缘膜的介电常数为3.1以下，具有C原子浓度为20％以下的-SiR 2 O重复结构单元。 硅氧烷聚合物还具有高热稳定性和高耐湿性。 硅氧烷聚合物通过直接蒸发式SialphaOalpha-1R2alpha-β+ 2（OCnH2n + 1）β的含硅烃化合物形成，其中α为1-3的整数，β为2，n为整数1 -3，R是与Si连接的C 1-6烃，然后将蒸发的化合物与氧化剂一起引入等离子体CVD装置的反应室。 通过减少反应气体的总流量来延长源气体的停留时间，以形成具有低介电常数的微孔多孔结构的硅氧烷聚合物膜。

公开(公告)号：US20040048490A1

公开(公告)日：2004-03-11

申请号：US10657416

申请日：2003-09-08

Applicant: ASM JAPAN K.K.

Inventor： Naoto Tsuji ,  Fumitoshi Ozaki ,  Satoshi Takahashi

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/3212 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684

Abstract: An interlayer insulation film for multilayer interconnect of a semiconductor integrated circuit is formed by forming a first insulation film on a substrate by plasma CVD using a silicon-containing hydrocarbon gas; and continuously forming a second insulation film on the first insulation film at a thickness less than the first insulation film in situ by plasma CVD using a silicon-containing hydrocarbon gas and an oxidizing gas. The second insulation film has a hardness of 6 GPa or higher and is used as a polishing stop layer.

Abstract translation: 通过使用含硅烃气体通过等离子体CVD法在基板上形成第一绝缘膜来形成半导体集成电路的多层互连用层间绝缘膜， 并且通过使用含硅烃气体和氧化气体的等离子体CVD在第一绝缘膜上以小于第一绝缘膜的厚度连续地形成第二绝缘膜。 第二绝缘膜的硬度为6GPa以上，用作抛光停止层。