公开(公告)号：US20040048490A1

公开(公告)日：2004-03-11

申请号：US10657416

申请日：2003-09-08

Applicant: ASM JAPAN K.K.

Inventor： Naoto Tsuji ,  Fumitoshi Ozaki ,  Satoshi Takahashi

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/3212 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684

Abstract: An interlayer insulation film for multilayer interconnect of a semiconductor integrated circuit is formed by forming a first insulation film on a substrate by plasma CVD using a silicon-containing hydrocarbon gas; and continuously forming a second insulation film on the first insulation film at a thickness less than the first insulation film in situ by plasma CVD using a silicon-containing hydrocarbon gas and an oxidizing gas. The second insulation film has a hardness of 6 GPa or higher and is used as a polishing stop layer.

Abstract translation: 通过使用含硅烃气体通过等离子体CVD法在基板上形成第一绝缘膜来形成半导体集成电路的多层互连用层间绝缘膜， 并且通过使用含硅烃气体和氧化气体的等离子体CVD在第一绝缘膜上以小于第一绝缘膜的厚度连续地形成第二绝缘膜。 第二绝缘膜的硬度为6GPa以上，用作抛光停止层。