公开(公告)号：US20040038514A1

公开(公告)日：2004-02-26

申请号：US10412363

申请日：2003-04-11

Applicant: ASM JAPAN K.K.

Inventor： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

IPC: H01L021/4763

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

Abstract: A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Abstract translation: 通过使含硅烃化合物汽化，形成源极气体，将由源气体构成的反应气体和任选的醇等添加气体引入到半导体基板上的绝缘膜上，形成硬膜至反应空间 等离子体CVD装置，并且施加低频RF功率和高频RF功率。 含硅烃化合物包括使用基础结构的形成低聚物的反应性基团作为基础结构的环状含Si烃化合物和/或线性含Si烃化合物。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US20030224622A1

公开(公告)日：2003-12-04

申请号：US10402109

申请日：2003-03-27

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Yoshinori Morisada ,  Yasuyoshi Hyodo ,  Seijiro Umemoto

IPC: H01L021/31

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of -50null C.-100null C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.

Abstract translation: 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置，并且在-50℃-100℃的温度下通过等离子体聚合沉积硅​​氧烷聚合物膜。反应气体在反应空间中的停留时间通过减少反应气体的总流量而延长 以形成低介电常数例如2.5的硅氧烷聚合物膜的方式。

公开(公告)号：US20030162408A1

公开(公告)日：2003-08-28

申请号：US10317239

申请日：2002-12-11

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato ,  Shinya Kaneko ,  Devendra Kumar ,  Seijiro Umemoto

IPC: H01L021/31

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a. low dielectric constant.

Abstract translation: 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置。 含硅烃化合物包括作为基础结构的环硅氧烷化合物或线性硅氧烷化合物，其具有使用基础结构的形成低聚物的反应性基团。 反应气体在反应空间中的停留时间通过减少反应气体的总流量而以a形成硅氧烷聚合物膜的方式延长。 低介电常数。

公开(公告)号：US20030143867A1

公开(公告)日：2003-07-31

申请号：US10309401

申请日：2002-12-03

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C23C16/45523 ,  C23C16/401

Abstract: An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.

Abstract translation: 通过包括以下步骤的方法在半导体衬底上形成绝缘膜：（i）将包含至少Si，C和H的化合物的源气体引入室中; （ii）将脉冲中的氧化气体引入所述室中，其中所述源气体和所述氧化气体形成反应气体; 和（iii）通过等离子体处理反应气体在半导体衬底上形成绝缘膜。 等离子体处理可以是等离子体CVD处理。

公开(公告)号：US20020160626A1

公开(公告)日：2002-10-31

申请号：US10133419

申请日：2002-04-25

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

IPC: H01L021/31

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  C08G77/00 ,  H01L2924/00

Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has nullSiR2Onull repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula SinullOnullnull1R2nullnullnullnull2(OCnH2nnull1)null wherein null is an integer of 1-3, null is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

Abstract translation: 硅氧烷聚合物绝缘膜的介电常数为3.1以下，具有C原子浓度为20％以下的-SiR 2 O重复结构单元。 硅氧烷聚合物还具有高热稳定性和高耐湿性。 硅氧烷聚合物通过直接蒸发式SialphaOalpha-1R2alpha-β+ 2（OCnH2n + 1）β的含硅烃化合物形成，其中α为1-3的整数，β为2，n为整数1 -3，R是与Si连接的C 1-6烃，然后将蒸发的化合物与氧化剂一起引入等离子体CVD装置的反应室。 通过减少反应气体的总流量来延长源气体的停留时间，以形成具有低介电常数的微孔多孔结构的硅氧烷聚合物膜。