公开(公告)号：US20040038514A1

公开(公告)日：2004-02-26

申请号：US10412363

申请日：2003-04-11

Applicant: ASM JAPAN K.K.

Inventor： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

IPC: H01L021/4763

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

Abstract: A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Abstract translation: 通过使含硅烃化合物汽化，形成源极气体，将由源气体构成的反应气体和任选的醇等添加气体引入到半导体基板上的绝缘膜上，形成硬膜至反应空间 等离子体CVD装置，并且施加低频RF功率和高频RF功率。 含硅烃化合物包括使用基础结构的形成低聚物的反应性基团作为基础结构的环状含Si烃化合物和/或线性含Si烃化合物。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US20040232355A1

公开(公告)日：2004-11-25

申请号：US10847127

申请日：2004-05-17

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Atsuki Fukazawa ,  Naoto Tsuji

IPC: H01J037/32

CPC classification number: H01J33/00 ,  H01J37/06

Abstract: An electron-beam irradiation apparatus includes an evacuatable filament-electron gun chamber housing a filament and an anode and having an inactive-gas inlet through which an inactive gas flows in; an evacuatable treatment chamber connected to an exhaust system; and a separation wall for separating the filament-electrode gun chamber and the treatment chamber. The separation wall has an aperture configured to pass electrons and gas therethrough from the filament-electron gun chamber.

Abstract translation: 电子束照射装置包括容纳灯丝和阳极并具有非活性气体入口的惰性气体入口的可抽出的灯丝电子枪室; 连接到排气系统的可抽空处理室; 以及用于分离灯丝电极枪室和处理室的分离壁。 分隔壁具有孔，该孔被配置为使电子和气体从灯丝电子枪室通过。

公开(公告)号：US20030192478A1

公开(公告)日：2003-10-16

申请号：US10412822

申请日：2003-04-11

Applicant: ASM JAPAN K.K.

Inventor： Naoto Tsuji ,  Ryo Kawaguchi ,  Atsuki Fukazawa ,  Rei Tanaka

IPC: C23C016/00

CPC classification number: H01J37/32082 ,  C23C16/4582 ,  C23C16/4585 ,  C23C16/5096 ,  H01L21/68735

Abstract: A plasma CVD apparatus includes a vacuum chamber, a showerhead, and a susceptor characterized in that an insulation ring is placed and embedded in a peripheral portion of the susceptor to increase the electrically effective distance between the showerhead and the susceptor, both of which functions as electrodes.

Abstract translation: 等离子体CVD装置包括真空室，喷头和基座，其特征在于，绝缘环被放置并嵌入在所述基座的周边部分中，以增加所述喷头和所述基座之间的电有效距离， 电极。

公开(公告)号：US20030162408A1

公开(公告)日：2003-08-28

申请号：US10317239

申请日：2002-12-11

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato ,  Shinya Kaneko ,  Devendra Kumar ,  Seijiro Umemoto

IPC: H01L021/31

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a. low dielectric constant.

Abstract translation: 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置。 含硅烃化合物包括作为基础结构的环硅氧烷化合物或线性硅氧烷化合物，其具有使用基础结构的形成低聚物的反应性基团。 反应气体在反应空间中的停留时间通过减少反应气体的总流量而以a形成硅氧烷聚合物膜的方式延长。 低介电常数。

公开(公告)号：US20030143867A1

公开(公告)日：2003-07-31

申请号：US10309401

申请日：2002-12-03

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C23C16/45523 ,  C23C16/401

Abstract: An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.

Abstract translation: 通过包括以下步骤的方法在半导体衬底上形成绝缘膜：（i）将包含至少Si，C和H的化合物的源气体引入室中; （ii）将脉冲中的氧化气体引入所述室中，其中所述源气体和所述氧化气体形成反应气体; 和（iii）通过等离子体处理反应气体在半导体衬底上形成绝缘膜。 等离子体处理可以是等离子体CVD处理。