公开(公告)号：US20200066512A1

公开(公告)日：2020-02-27

申请号：US16605475

申请日：2018-05-03

申请人： ASM IP Holding B.V.

发明人： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/40

摘要： Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

公开(公告)号：US10249577B2

公开(公告)日：2019-04-02

申请号：US15499647

申请日：2017-04-27

申请人： ASM IP Holding B.V.

发明人： Choong Man Lee ,  Yong Min Yoo ,  Young Jae Kim ,  Seung Ju Chun ,  Sun Ja Kim

IPC分类号： H01L21/4763 ,  H01L23/00 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/522

摘要： A semiconductor manufacturing method includes depositing a low-k dielectric layer, forming a trench in the low-k dielectric layer, forming a barrier layer in the trench, filling a metal on the barrier layer, planarizing the metal, and forming a capping layer on the planarized metal, wherein the capping layer includes at least two layers.

公开(公告)号：US20220076949A1

公开(公告)日：2022-03-10

申请号：US17450538

申请日：2021-10-11

申请人： ASM IP HOLDING B.V.

发明人： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455

摘要： Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

公开(公告)号：US20180033625A1

公开(公告)日：2018-02-01

申请号：US15662107

申请日：2017-07-27

申请人： ASM IP Holding B.V.

发明人： Yong Min Yoo ,  Jong Wan Choi ,  Young Jae Kim ,  Sun Ja Kim ,  Wan Gyu Lim

IPC分类号： H01L21/225 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3065

CPC分类号： H01L21/225 ,  H01L21/2255 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31053

摘要： A method of processing a substrate to enable selective doping without a photolithography process is provided. The method includes forming a diffusion barrier on the substrate having a patterned structure using plasma deposition method, removing the diffusion barrier except for part of the diffusion barrier using wet etching, forming a diffusion source layer on the patterned structure and the part of the diffusion barrier, and applying energy to the diffusion source layer.

公开(公告)号：US20170338192A1

公开(公告)日：2017-11-23

申请号：US15499647

申请日：2017-04-27

申请人： ASM IP Holding B.V.

发明人： Choong Man Lee ,  Yong Min Yoo ,  Young Jae Kim ,  Seung Ju Chun ,  Sun Ja Kim

IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC分类号： H01L23/564 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295

摘要： A semiconductor manufacturing method includes depositing a low-k dielectric layer, forming a trench in the low-k dielectric layer, forming a barrier layer in the trench, filling a metal on the barrier layer, planarizing the metal, and forming a capping layer on the planarized metal, wherein the capping layer includes at least two layers.

公开(公告)号：US11501965B2

公开(公告)日：2022-11-15

申请号：US15971601

申请日：2018-05-04

申请人： ASM IP Holding B.V.

发明人： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia ,  Eva Tois ,  Suvi Haukka ,  Toshiya Suzuki

IPC分类号： H01L21/02 ,  H01L21/32 ,  H01L21/311 ,  H01L21/321

摘要： Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.

公开(公告)号：US11158500B2

公开(公告)日：2021-10-26

申请号：US16603555

申请日：2018-05-03

申请人： ASM IP Holding B.V.

发明人： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/3065

摘要： Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.

公开(公告)号：US11728164B2

公开(公告)日：2023-08-15

申请号：US17450538

申请日：2021-10-11

申请人： ASM IP HOLDING B.V.

发明人： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

IPC分类号： C23C16/40 ,  C23C16/455 ,  H01L21/02

CPC分类号： H01L21/02274 ,  C23C16/401 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02216

摘要： Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

公开(公告)号：US11170993B2

公开(公告)日：2021-11-09

申请号：US16605475

申请日：2018-05-03

申请人： ASM IP Holding B.V.

发明人： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

IPC分类号： C23C16/40 ,  H01L21/02 ,  C23C16/455

摘要： Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

公开(公告)号：US20190081072A1

公开(公告)日：2019-03-14

申请号：US16188690

申请日：2018-11-13

申请人： ASM IP Holding B.V.

发明人： Seung Ju Chun ,  Yong Min Yoo ,  Jong Wan Choi ,  Young Jae Kim ,  Sun Ja Kim ,  Wan Gyu Lim ,  Yoon Ki Min ,  Hae Jin Lee ,  Tae Hee Yoo

IPC分类号： H01L27/11582 ,  H01L23/532 ,  H01L27/115 ,  H01L23/522 ,  H01L21/768 ,  H01L21/311 ,  H01L27/11556 ,  H01L27/1157

摘要： A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.