公开(公告)号：US12100588B2

公开(公告)日：2024-09-24

申请号：US18214891

申请日：2023-06-27

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki

IPC分类号： H01L21/02 ,  C23C16/40 ,  H01L21/3105 ,  H01L21/311 ,  H10B69/00 ,  C23C16/56

CPC分类号： H01L21/0234 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/31111 ,  H10B69/00 ,  C23C16/401 ,  C23C16/56

摘要： A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

公开(公告)号：US11996284B2

公开(公告)日：2024-05-28

申请号：US17401901

申请日：2021-08-13

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore

IPC分类号： H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31111

摘要： Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US11784043B2

公开(公告)日：2023-10-10

申请号：US17406919

申请日：2021-08-19

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore ,  Shang Chen ,  Ryoko Yamada ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/02

CPC分类号： H01L21/0228 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02274

摘要： Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

公开(公告)号：US11133181B2

公开(公告)日：2021-09-28

申请号：US16543917

申请日：2019-08-19

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore ,  Shang Chen ,  Ryoko Yamada ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/02

摘要： Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

公开(公告)号：US10510529B2

公开(公告)日：2019-12-17

申请号：US15707878

申请日：2017-09-18

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/033

摘要： Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US10312055B2

公开(公告)日：2019-06-04

申请号：US15659631

申请日：2017-07-26

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki

IPC分类号： C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/505

摘要： A method of forming a film on a substrate by PEALD includes deposition cycles, each including (i) feeding a precursor in a pulse to a reaction space to adsorb a precursor on a surface of a substrate; (ii) after step (i), applying RF power to a second electrode to generate in the reaction space a plasma to which the precursor-adsorbed surface is exposed, thereby forming a sublayer on the surface; and (iii) applying a bias voltage to the second electrode while applying RF power in step (ii), which bias voltage is negative with reference to a potential on a surface of the first electrode, wherein the cycle is repeated to deposit multiple sublayers until a film constituted by the sublayers has a desired thickness.

公开(公告)号：US20180350587A1

公开(公告)日：2018-12-06

申请号：US15971601

申请日：2018-05-04

申请人： ASM IP Holding B.V.

发明人： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia ,  Eva Tois ,  Suvi Haukka ,  Toshiya Suzuki

IPC分类号： H01L21/02 ,  H01L21/311

摘要： Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.

公开(公告)号：US09887082B1

公开(公告)日：2018-02-06

申请号：US15222715

申请日：2016-07-28

申请人： ASM IP Holding B.V.

发明人： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido Van Der Star ,  Toshiya Suzuki

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

CPC分类号： H01L21/0228 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/76224

摘要： There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US11728164B2

公开(公告)日：2023-08-15

申请号：US17450538

申请日：2021-10-11

申请人： ASM IP HOLDING B.V.

发明人： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

IPC分类号： C23C16/40 ,  C23C16/455 ,  H01L21/02

CPC分类号： H01L21/02274 ,  C23C16/401 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02216

摘要： Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

公开(公告)号：US20230132743A1

公开(公告)日：2023-05-04

申请号：US18146868

申请日：2022-12-27

申请人： ASM IP HOLDING B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

IPC分类号： H01L21/02 ,  C23C16/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

摘要： Disclosed is a process for forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plurality of deposition cycles. At least one deposition cycle includes contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that includes reactive species. The reactive species are generated from a gas that flows continuously to the reaction space throughout the at least one deposition cycle. A ratio of a wet etch rate of the SiOC thin film to a wet etch rate of thermal silicon oxide is less than 5.