公开(公告)号：US20200378006A1

公开(公告)日：2020-12-03

申请号：US16424302

申请日：2019-05-28

Applicant: APPLIED MATERIALS, INC.

Inventor： RIBHU GAUTAM ,  ANANTHKRISHNA JUPUDI ,  TUCK FOONG KOH ,  PREETHAM P. RAO ,  VINODH RAMACHANDRAN ,  YUEH SHENG OW ,  YUICHI WADA ,  CHENG-HSIUNG TSAI ,  KAI LIANG LIEW

IPC: C23C16/511 ,  C23C16/54 ,  B01J19/12

Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

公开(公告)号：US20210140029A1

公开(公告)日：2021-05-13

申请号：US16677891

申请日：2019-11-08

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  YUICHI WADA ,  JUNQI WEI ,  KANG ZHANG ,  KELVIN BOH

IPC: C23C14/02 ,  H01L23/00 ,  C23C14/16 ,  H01J37/32 ,  H01J37/34

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.

公开(公告)号：US20190355616A1

公开(公告)日：2019-11-21

申请号：US16403796

申请日：2019-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： FELIX DENG ,  YUEH SHENG OW ,  TUCK FOONG KOH ,  NUNO YEN-CHU CHEN ,  YUICHI WADA ,  SREE RANGASAI V KESAPRAGADA ,  CLINTON GOH

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US20190018053A1

公开(公告)日：2019-01-17

申请号：US15649600

申请日：2017-07-13

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHKRISHNA JUPUDI ,  YUEH SHENG OW ,  JACOB NEWMAN ,  PREETHAM RAO ,  YUICHI WADA ,  VINODH RAMACHANDRAN

IPC: G01R29/08 ,  H01L21/67 ,  H05B6/80 ,  H05B6/64

Abstract: An apparatus for relaying microwave field intensity in a microwave cavity. In some embodiments, the apparatus comprises a microwave transparent substrate with at least one Radio Frequency (RF) detector that is capable of detecting a microwave field and generating a signal associated with a field intensity of the detected microwave field and a transmitter that receives the signal associated with the detected microwave field from the RF detector and transmits or stores information about the detected microwave field intensity. In some embodiments, the apparatus relays the microwave intensity via a wired, wireless, or optical transmitter located in proximity of the RF detector.