公开(公告)号：US20210233773A1

公开(公告)日：2021-07-29

申请号：US17227327

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  JUNQI WEI ,  WEN LONG FAVIER SHOO ,  ANANTHKRISHNA JUPUDI ,  TAKASHI SHIMIZU ,  KELVIN BOH ,  TUCK FOONG KOH

IPC: H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US20200258723A1

公开(公告)日：2020-08-13

申请号：US16271473

申请日：2019-02-08

Applicant: APPLIED MATERIALS, INC.

Inventor： KIRANKUMAR NEELASANDRA SAVANDAIAH ,  JUNQI WEI ,  YUEH SHENG OW ,  WEN LONG FAVIER SHOO

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  C23C14/14

Abstract: Methods and apparatus for physical vapor deposition are provided. The apparatus, for example, includes A PVD apparatus that includes a chamber including a chamber wall; a magnetron including a plurality of magnets configured to produce a magnetic field within the chamber; a pedestal configured to support a substrate; and a target assembly comprising a target made of gold and supported on the chamber wall via a backing plate coupled to a back surface of the target so that a front surface of the target faces the substrate, wherein a distance between a back surface formed in a recess of the backing plate and a bottom surface of the plurality of magnets is about 3.95 mm to about 4.45 mm, and wherein a distance between the front surface of the target and a front surface of the substrate is about 60.25 mm to about 60.75 mm.

公开(公告)号：US20210140029A1

公开(公告)日：2021-05-13

申请号：US16677891

申请日：2019-11-08

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  YUICHI WADA ,  JUNQI WEI ,  KANG ZHANG ,  KELVIN BOH

IPC: C23C14/02 ,  H01L23/00 ,  C23C14/16 ,  H01J37/32 ,  H01J37/34

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.

公开(公告)号：US20190341264A1

公开(公告)日：2019-11-07

申请号：US16399478

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  JUNQI WEI ,  WEN LONG FAVIER SHOO ,  ANANTHKRISHNA JUPUDI ,  TAKASHI SHIMIZU ,  KELVIN BOH ,  TUCK FOONG KOH

IPC: H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US20160104603A1

公开(公告)日：2016-04-14

申请号：US14864031

申请日：2015-09-24

Applicant: APPLIED MATERIALS, INC.

Inventor： JUNQI WEI ,  KIRANKUMAR SAVANDAIAH ,  ANANTHKRISHNA JUPUDI ,  ZHITAO CAO ,  YUEH SHENG OW

IPC: H01J37/32

CPC classification number: H01J37/3288 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32642

Abstract: Apparatus for extending process kit components lifetimes are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring.

Abstract translation: 公开了用于延长工艺组件组件寿命的装置。 在一些实施例中，处理套件包括：第一环，其具有限定内径的内壁，限定外径的外壁，内壁和外壁之间的上表面，以及位于内壁和内壁之间的相对的下表面 和所述外壁，其中所述上表面的靠近所述内壁的第一部分是凹形的，并且其中所述上表面的第二部分水平地延伸离开所述第一部分; 以及具有上表面和相对的下表面的第二环，其中所述下表面的第一部分构造成搁置在所述第一环的所述第二部分上，其中所述下表面的第二部分是凸的并延伸到 不接触第一环的上表面的凹形第一部分。