公开(公告)号：US20190341264A1

公开(公告)日：2019-11-07

申请号：US16399478

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  JUNQI WEI ,  WEN LONG FAVIER SHOO ,  ANANTHKRISHNA JUPUDI ,  TAKASHI SHIMIZU ,  KELVIN BOH ,  TUCK FOONG KOH

IPC: H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US20210233773A1

公开(公告)日：2021-07-29

申请号：US17227327

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  JUNQI WEI ,  WEN LONG FAVIER SHOO ,  ANANTHKRISHNA JUPUDI ,  TAKASHI SHIMIZU ,  KELVIN BOH ,  TUCK FOONG KOH

IPC: H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US20210140029A1

公开(公告)日：2021-05-13

申请号：US16677891

申请日：2019-11-08

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  YUICHI WADA ,  JUNQI WEI ,  KANG ZHANG ,  KELVIN BOH

IPC: C23C14/02 ,  H01L23/00 ,  C23C14/16 ,  H01J37/32 ,  H01J37/34

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.