公开(公告)号：US20160033205A1

公开(公告)日：2016-02-04

申请号：US14504021

申请日：2014-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： KALLOL BERA ,  KIM VELLORE ,  ANDREW CONSTANT ,  JACOB NEWMAN ,  JEFFREY BLAHNIK ,  JASON SCHALLER ,  WILLIAM WEAVER ,  ROBERT VOPAT ,  BENJAMIN RIORDON

IPC: F28D9/00

CPC classification number: F28F3/12 ,  H01L21/67109 ,  H01L21/67303

Abstract: Embodiments of multi-substrate thermal management apparatus are provided herein. In some embodiments, a multi-substrate thermal management apparatus includes a plurality of plates vertically arranged above one another; a plurality of channels extending through each of the plurality of plates; a supply manifold including a supply channel coupled to the plurality of plates at first locations; and a return manifold including a return channel coupled to the plurality of plates via a plurality of legs at second locations, wherein the supply and return channels are fluidly coupled to the plurality of channels to flow a heat transfer fluid through the plurality of plates.

Abstract translation: 本发明提供了多基板热管理装置的实施例。 在一些实施例中，多基板热管理装置包括彼此垂直布置的多个板; 多个通道，其延伸穿过所述多个板中的每一个; 供应歧管，其包括在第一位置处联接到所述多个板的供应通道; 以及返回歧管，其包括在第二位置处经由多个腿联接到所述多个板的返回通道，其中所述供应和返回通道流体地联接到所述多个通道以使传热流体流过所述多个板。

公开(公告)号：US20190018053A1

公开(公告)日：2019-01-17

申请号：US15649600

申请日：2017-07-13

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHKRISHNA JUPUDI ,  YUEH SHENG OW ,  JACOB NEWMAN ,  PREETHAM RAO ,  YUICHI WADA ,  VINODH RAMACHANDRAN

IPC: G01R29/08 ,  H01L21/67 ,  H05B6/80 ,  H05B6/64

Abstract: An apparatus for relaying microwave field intensity in a microwave cavity. In some embodiments, the apparatus comprises a microwave transparent substrate with at least one Radio Frequency (RF) detector that is capable of detecting a microwave field and generating a signal associated with a field intensity of the detected microwave field and a transmitter that receives the signal associated with the detected microwave field from the RF detector and transmits or stores information about the detected microwave field intensity. In some embodiments, the apparatus relays the microwave intensity via a wired, wireless, or optical transmitter located in proximity of the RF detector.

公开(公告)号：US20150102396A1

公开(公告)日：2015-04-16

申请号：US14515767

申请日：2014-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： UDAYAN GANGULY ,  YOSHITAKA YOKOTA ,  JING TANG ,  SUNDERRAJ THIRUPAPULIYUR ,  CHRISTOPHER SEAN OLSEN ,  SHIYU SUN ,  TZE WING POON ,  WEI LIU ,  JOHANES SWENBERG ,  VICKY U. NGUYEN ,  SWAMINATHAR SRINIVASAN ,  JACOB NEWMAN

IPC: H01L29/788 ,  H01L21/67

CPC classification number: H01L29/788 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76232 ,  H01L27/11521

Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract translation: 适用于窄间距应用的半导体器件及其制造方法在本文中描述。 在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。 在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。