公开(公告)号：US10586707B2

公开(公告)日：2020-03-10

申请号：US16189429

申请日：2018-11-13

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond Hung ,  Namsung Kim ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Jong Choi ,  Christopher Ahles ,  Andrew Kummel

IPC: H01L21/285 ,  H01L21/311 ,  H01L21/324 ,  C23C16/46 ,  C23C16/42 ,  C23C16/455 ,  C23C16/04 ,  C23C16/08 ,  C23C16/02

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.

公开(公告)号：US11626288B2

公开(公告)日：2023-04-11

申请号：US17389772

申请日：2021-07-30

Applicant: Applied Materials, Inc.

Inventor： Raymond Hung ,  Mehul Naik ,  Michael Haverty

IPC: H01L21/285 ,  H01L29/45 ,  H01L29/47 ,  H01L29/40 ,  H01L29/417

Abstract: Methods for reducing interface resistance of semiconductor devices leverage dual work function metal silicide. In some embodiments, a method may comprise selectively depositing a metal silicide layer on an Epi surface and adjusting a metal-to-silicon ratio of the metal silicide layer during deposition to alter a work function of the metal silicide layer based on whether the Epi surface is a P type Epi surface or an N type Epi surface to achieve a Schottky barrier height of less than 0.5 eV. The work function for a P type Epi surface may be adjusted to a value of approximately 5.0 eV and the work function for an N type Epi surface may be adjusted to a value of approximately 3.8 eV. The deposition of the metal silicide layer on the Epi surface may be performed prior to deposition of a contact etch stop layer and an activation anneal.

公开(公告)号：US11417568B2

公开(公告)日：2022-08-16

申请号：US16845749

申请日：2020-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei Lei ,  Yi Xu ,  Yu Lei ,  Tae Hong Ha ,  Raymond Hung ,  Shirish A. Pethe

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/285

Abstract: Methods and apparatus for selectively depositing a tungsten layer atop a dielectric surface. In embodiments the method includes: depositing a tungsten layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a dielectric bottom surface of a feature disposed in a substrate to form a first tungsten portion having a first thickness atop the substrate field, a second tungsten portion having a second thickness atop the sidewall, and a third tungsten portion having a third thickness atop the dielectric bottom surface, wherein the second thickness is less than the first thickness and third thickness; oxidizing a top surface of the tungsten layer to form a first oxidized tungsten portion atop the substrate field, a second oxidized tungsten portion atop the side wall, and a third oxidized tungsten portion atop the dielectric bottom surface; removing the first oxidized tungsten portion, the second oxidized tungsten portion and the third oxidized tungsten portion, wherein the second tungsten portion is completely removed from the sidewall; and passivating or completely removing the first tungsten portion from the substrate field.

公开(公告)号：US11424132B2

公开(公告)日：2022-08-23

申请号：US16590755

申请日：2019-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Takashi Kuratomi ,  Avgerinos Gelatos ,  Tae Hong Ha ,  Xuesong Lu ,  Szuheng Ho ,  Wei Lei ,  Mark Lee ,  Raymond Hung ,  Xianmin Tang

IPC: H01L21/3205 ,  H01L21/285 ,  H01L21/02 ,  H01L21/321 ,  C23C16/02 ,  H01L21/768 ,  C23C16/455 ,  C23C16/06 ,  C23C16/34 ,  C23C14/06 ,  C23C16/56

Abstract: Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.

公开(公告)号：US10475655B2

公开(公告)日：2019-11-12

申请号：US15988820

申请日：2018-05-24

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond Hung ,  Namsung Kim ,  Srinivas Nemani ,  Ellie Yieh ,  Jong Choi ,  Christopher Ahles ,  Andrew Kummel

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/324

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.