公开(公告)号：US11424132B2

公开(公告)日：2022-08-23

申请号：US16590755

申请日：2019-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Takashi Kuratomi ,  Avgerinos Gelatos ,  Tae Hong Ha ,  Xuesong Lu ,  Szuheng Ho ,  Wei Lei ,  Mark Lee ,  Raymond Hung ,  Xianmin Tang

IPC: H01L21/3205 ,  H01L21/285 ,  H01L21/02 ,  H01L21/321 ,  C23C16/02 ,  H01L21/768 ,  C23C16/455 ,  C23C16/06 ,  C23C16/34 ,  C23C14/06 ,  C23C16/56

Abstract: Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.