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公开(公告)号：US12183559B2
公开(公告)日：2024-12-31
申请号：US17508493
申请日：2021-10-22
Applicant: Applied Materials, Inc.
Inventor： Vishwas Kumar Pandey , Colin John Dickinson , Dinkesh Huderi Somanna , Ala Moradian , Kartik Bhupendra Shah
Abstract: An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.
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公开(公告)号：US20130284724A1
公开(公告)日：2013-10-31
申请号：US13860572
申请日：2013-04-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Michael S. Cox , Colin John Dickinson
IPC: H05B6/36
CPC classification number: H05B6/36 , F01N3/0275 , F01N2240/28 , H01J37/32834 , H01J37/32844 , H05H1/46 , H05H2001/4667 , H05H2245/1215 , Y02C20/30
Abstract: In some embodiments an apparatus for treating an exhaust gas in a foreline of a substrate processing system may include a dielectric tube configured to be coupled to the foreline of the substrate processing system to allow a flow of exhaust gases from the foreline through the dielectric tube; an RF coil wound about an outer surface of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube; a tap coupled to the RF coil to provide an RF return path, the tap disposed between the first end of the dielectric tube and a central portion of the dielectric tube.
Abstract translation: 在一些实施例中，用于处理衬底处理系统的前级管线中的废气的设备可以包括被配置为耦合到衬底处理系统的前级管线以允许来自前级管线的废气流经介质管的介质管; 围绕所述电介质管的外表面缠绕的RF线圈，所述RF线圈具有第一端以向所述RF线圈提供RF输入，所述RF线圈的所述第一端设置在所述电介质管的第一端附近，所述第二端 设置在电介质管的第二端附近; 耦合到RF线圈的抽头以提供RF返回路径，所述抽头设置在电介质管的第一端和电介质管的中心部分之间。
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公开(公告)号：US09867238B2
公开(公告)日：2018-01-09
申请号：US13860572
申请日：2013-04-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Michael S. Cox , Colin John Dickinson
CPC classification number: H05B6/36 , F01N3/0275 , F01N2240/28 , H01J37/32834 , H01J37/32844 , H05H1/46 , H05H2001/4667 , H05H2245/1215 , Y02C20/30
Abstract: In some embodiments an apparatus for treating an exhaust gas in a foreline of a substrate processing system may include a dielectric tube configured to be coupled to the foreline of the substrate processing system to allow a flow of exhaust gases from the foreline through the dielectric tube; an RF coil wound about an outer surface of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube; a tap coupled to the RF coil to provide an RF return path, the tap disposed between the first end of the dielectric tube and a central portion of the dielectric tube.
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公开(公告)号：US20160276179A1
公开(公告)日：2016-09-22
申请号：US14418411
申请日：2014-12-18
Applicant: Applied Materials, Inc.
Inventor： Paul E. Fisher , Monique McIntosh , Andrew Herbert , Colin John Dickinson
CPC classification number: H01L21/67017 , B01D53/346 , B01D53/56 , B01D53/76
Abstract: Embodiments enclosed herein relate to methods and apparatus for reducing nitrogen oxides (NOx) produced during processing, such as during semiconductor fabrication processing. A processing system may include an abatement controller and an effluent abatement system, wherein the abatement controller controls the effluent abatement system to reduce NOx production, while ensuring abatement of the effluent gases from the processing system. The effluent abatement system may include a combustion-type effluent abatement system and/or a plasma-type effluent abatement system. The abatement controller may select operating modes of the effluent abatement systems to reduce NOx production.
Abstract translation: 本文包括的实施例涉及用于还原在加工期间产生的氮氧化物（NOx）的方法和装置，例如在半导体制造处理期间。 处理系统可以包括减排控制器和污水消除系统，其中减排控制器控制污水排放系统以减少NOx产生，同时确保减少来自处理系统的废气。 废水排放系统可以包括燃烧型流出物排放系统和/或等离子体型排出物排放系统。 减排控制器可以选择排污系统的运行模式以减少NOx的产生。
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公开(公告)号：US20160118226A1
公开(公告)日：2016-04-28
申请号：US14986070
申请日：2015-12-31
Applicant: Applied Materials, Inc.
Inventor： Michael S. Cox , Rongping Wang , Brian T. West , Roger M. Johnson , Colin John Dickinson
CPC classification number: H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
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Patent Agency Ranking
公开(公告)号：US11110392B2
公开(公告)日：2021-09-07
申请号：US16429357
申请日：2019-06-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Colin John Dickinson , Mehran Moalem , Daniel O. Clark
Abstract: Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, a method for treating an exhaust gas in an exhaust conduit of a substrate processing system includes: flowing an exhaust gas from a process chamber into a plasma source via a foreline; injecting a reagent into the foreline; forming a plasma in the plasma source from the exhaust gas and the reagent; and injecting a cleaning gas into the foreline, wherein the cleaning gas and the reagent are different gases.
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公开(公告)号：US10722840B2
公开(公告)日：2020-07-28
申请号：US15449226
申请日：2017-03-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Colin John Dickinson , Mehran Moalem , Daniel O. Clark
Abstract: Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, a method for treating an exhaust gas in an exhaust conduit of a substrate processing system includes: flowing an exhaust gas and a reagent gas into an exhaust conduit of a substrate processing system; injecting a non-reactive gas into the exhaust conduit to maintain a desired pressure in the exhaust conduit for conversion of the exhaust gas; and forming a plasma from the exhaust gas and reagent gas, subsequent to injecting the non-reactive gas, to convert the exhaust gas to abatable byproduct gases.
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公开(公告)号：US10449486B2
公开(公告)日：2019-10-22
申请号：US15486938
申请日：2017-04-13
Applicant: Applied Materials, Inc.
Inventor： Michael S. Cox , Monique McIntosh , Colin John Dickinson , Paul E. Fisher , Yutaka Tanaka , Zheng Yuan
Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
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9.发明授权Capacitively coupled plasma source for abating compounds produced in semiconductor processes 有权用于减少在半导体工艺中产生的化合物的电容耦合等离子体源公开(公告)号：US09543124B2
公开(公告)日：2017-01-10
申请号：US14986070
申请日：2015-12-31
Applicant: Applied Materials, Inc.
Inventor： Michael S. Cox , Rongping Wang , Brian T. West , Roger M. Johnson , Colin John Dickinson
CPC classification number: H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
Abstract translation: 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。
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公开(公告)号：US12170192B2
公开(公告)日：2024-12-17
申请号：US16939843
申请日：2020-07-27
Applicant: Applied Materials, Inc.
Inventor： Colin John Dickinson
Abstract: Implementations of the present disclosure relate to systems for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a system is provided that includes a water and oxygen delivery system. The water and oxygen delivery system includes a water vapor reagent source fluidly coupled with a chamber foreline via a first conduit; and an oxygen reagent source fluidly coupled with the chamber foreline via a second conduit fluidly coupled with the first conduit. The system further includes a plasma source fluidly coupled with the water and oxygen delivery system via the chamber foreline.
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