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公开(公告)号：US20240347442A1
公开(公告)日：2024-10-17
申请号：US18634621
申请日：2024-04-12
发明人： Keun Soo Kim , Jae Yun Kim , Byoung Jun Ahn , Dong Soo Ryu , Dae Byoung Kang , Chel Woo Park
IPC分类号： H01L23/498 , H01L23/31 , H01L23/42 , H01L23/433 , H01L23/538 , H01L25/10
CPC分类号： H01L23/49894 , H01L23/3121 , H01L23/42 , H01L23/433 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L23/49833 , H01L25/105 , H01L23/5389 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/92225 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2225/107 , H01L2924/00014 , H01L2924/15311 , H01L2924/1533 , H01L2924/18161 , H01L2924/3511
摘要： A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.
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公开(公告)号：US11961797B2
公开(公告)日：2024-04-16
申请号：US17468981
申请日：2021-09-08
发明人： Keun Soo Kim , Jae Yun Kim , Byoung Jun Ahn , Dong Soo Ryu , Dae Byoung Kang , Chel Woo Park
IPC分类号： H01L23/498 , H01L23/31 , H01L23/42 , H01L23/433 , H01L25/10 , H01L23/538
CPC分类号： H01L23/49894 , H01L23/3121 , H01L23/42 , H01L23/433 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L23/49833 , H01L25/105 , H01L23/5389 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/92225 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2225/107 , H01L2924/00014 , H01L2924/15311 , H01L2924/1533 , H01L2924/18161 , H01L2924/3511 , H01L2224/48091 , H01L2924/00014 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2924/15311 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00
摘要： A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.
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公开(公告)号：US20240069629A1
公开(公告)日：2024-02-29
申请号：US18238729
申请日：2023-08-28
发明人： Tae Ho Yoon , Yang Gyoo Jung , Min Ho Kim , Youn Seok Song , Dong Soo Ryu , Choong Hoe Kim
CPC分类号： G06F3/012 , G02B27/0093 , G02B27/0172 , G06F3/033 , G09G5/377 , G09G5/38 , G02B2027/0138 , G02B2027/014 , G09G2320/106 , G09G2354/00
摘要： A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods that enhance or control laser irradiation of a semiconductor die, for example spatially and/or temporally, to improve bonding of the semiconductor die to a substrate.
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公开(公告)号：US11742216B2
公开(公告)日：2023-08-29
申请号：US17005021
申请日：2020-08-27
发明人： Tae Ho Yoon , Yang Gyoo Jung , Min Ho Kim , Youn Seok Song , Dong Soo Ryu , Choong Hoe Kim
CPC分类号： H01L21/4853 , G02B27/0927 , H01L24/75 , H01L24/81 , H01L23/3128 , H01L25/0657 , H01L25/50 , H01L2021/60112 , H01L2224/131 , H01L2224/16145 , H01L2224/16227 , H01L2224/73204 , H01L2224/75263 , H01L2224/81002 , H01L2224/81007 , H01L2224/81191 , H01L2224/81224 , H01L2224/81815 , H01L2224/92125 , H01L2225/06513 , H01L2924/15311 , H01L2924/18161 , H01L2924/3511 , H01L2224/131 , H01L2924/014
摘要： A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods that enhance or control laser irradiation of a semiconductor die, for example spatially and/or temporally, to improve bonding of the semiconductor die to a substrate.
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公开(公告)号：US20220130752A1
公开(公告)日：2022-04-28
申请号：US17468981
申请日：2021-09-08
发明人： Keun Soo Kim , Jae Yun Kim , Byoung Jun Ahn , Dong Soo Ryu , Dae Byoung Kang , Chel Woo Park
IPC分类号： H01L23/498 , H01L23/31 , H01L25/10 , H01L23/42 , H01L23/433
摘要： A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.
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公开(公告)号：US11121071B2
公开(公告)日：2021-09-14
申请号：US16813368
申请日：2020-03-09
发明人： Keun Soo Kim , Jae Yun Kim , Byoung Jun Ahn , Dong Soo Ryu , Dae Byoung Kang , Chel Woo Park
IPC分类号： H01L23/498 , H01L23/31 , H01L25/10 , H01L23/42 , H01L23/433 , H01L23/538
摘要： A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.
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