公开(公告)号：US10801129B2

公开(公告)日：2020-10-13

申请号：US16313774

申请日：2017-06-26

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

Inventor： Benoit Amstatt ,  Florian Dupont ,  Ewen Henaff ,  Berangere Hyot

IPC: H01L21/02 ,  H01L33/18 ,  H01L33/00 ,  H01L33/24 ,  C03B23/02 ,  C03B23/04 ,  C03B25/04 ,  C30B29/60 ,  C30B23/02 ,  C30B23/04 ,  C30B25/04 ,  C30B25/18

Abstract: A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.

公开(公告)号：US09793431B2

公开(公告)日：2017-10-17

申请号：US15305745

申请日：2015-04-20

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

Inventor： Bérangère Hyot ,  Florian Dupont

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/12 ,  H01L33/18 ,  H01L33/10 ,  H01L33/32 ,  H01L27/15 ,  H01L33/08 ,  H01L33/46

CPC classification number: H01L33/0066 ,  H01L27/15 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/10 ,  H01L33/12 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

Abstract: The optoelectronic device (1) comprises a substrate (2), a light-emitting member (3) comprising an elongate element (4) extending in a direction forming an angle with the substrate (2). An intermediate element (5) is interposed between the substrate (2) and a longitudinal end of the elongate element (4) closest to the substrate (2). Furthermore, the substrate (2) is transparent to said light and the intermediate element (5), transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm.

公开(公告)号：US12002841B2

公开(公告)日：2024-06-04

申请号：US17613699

申请日：2020-05-28

Applicant: ALEDIA

Inventor： Florian Dupont ,  Jérôme Napierala

IPC: H01L27/15

CPC classification number: H01L27/15

Abstract: An optoelectronic device includes first and second light-emitting diodes, each LED having: a first semiconductor portion, with a first type of doping, having a wire-like shape along an axis and having side surfaces parallel to this axis; an active portion arranged at least partially on a top end of the first portion; and a second semiconductor portion, with a second type of doping, arranged at least partially on all or part of the active portion. The optoelectronic device further includes an electrically resistive layer having an electrical resistance that is higher than that of the active portion, covering at least all or part of the side surfaces of the first portion and all or part of the surface of the top end of the first portion not covered by the active portion. The resistive layers of the first and second LEDs are separated from one another.

公开(公告)号：US20220351971A1

公开(公告)日：2022-11-03

申请号：US17621682

申请日：2020-06-26

Applicant: Aledia

Inventor： Florian Dupont ,  Jérôme Napierala

IPC: H01L21/02 ,  H01L29/06

Abstract: A method of manufacturing a device including micrometer- or nanometer-range wires including a III-V compound, including, for each wire, the forming of at least a portion of the wire by a step of metal-organic vapor epitaxy including the injection into a reactor of a first precursor gas of the group-V element, of a second precursor gas of the group-III element, and of a third precursor gas of an additional element, dopant of the III-V compound, of a gas capable of obtaining a dopant concentration greater than 5.1019 atoms/cm3, for example, greater than 1.1020 atoms/cm3, in the wire portion in the case where the portion has a homogeneous dopant concentration.

公开(公告)号：US10886427B2

公开(公告)日：2021-01-05

申请号：US16313749

申请日：2017-06-26

Applicant: ALEDIA ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian Dupont ,  Benoit Amstatt ,  Vincent Beix ,  Thomas Lacave ,  Philippe Gilet ,  Ewen Henaff ,  Berangere Hyot ,  Hubert Bono

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/24 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/38 ,  H01L33/18 ,  H01L33/06

Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

公开(公告)号：US10340138B2

公开(公告)日：2019-07-02

申请号：US15532260

申请日：2015-12-04

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

Inventor： Florian Dupont ,  Benoit Amstatt ,  Bérangère Hyot

IPC: H01L21/02 ,  B82Y10/00 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/18 ,  H01L29/06

Abstract: The electronic device comprises a substrate (1), at least one semiconductor wire element (2) formed by a nitride of a group III material and an electroconductive layer (3) interposed between the substrate (1) and said at least one semiconductor wire element (2). Said at least one semiconductor wire element (2) extends from said electroconductive layer (3), and the electroconductive layer (3) comprises a carbide of zirconium or a carbide of hafnium.

公开(公告)号：US20150295041A1

公开(公告)日：2015-10-15

申请号：US14438497

申请日：2013-10-25

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

Inventor： Bérangère Hyot ,  Benoit Amstatt ,  Marie-Françoise Armand ,  Florian Dupont

IPC: H01L29/06 ,  H01L33/12 ,  H01L21/02

CPC classification number: H01L29/0676 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  C30B25/005 ,  C30B25/183 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B29/406 ,  C30B29/605 ,  H01L21/02104 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L29/401 ,  H01L29/413 ,  H01L29/6609 ,  H01L33/04 ,  H01L33/12 ,  H01L33/16 ,  H01L33/24 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/932

Abstract: The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Abstract translation: 电子器件包括衬底（1），介于衬底（1）和所述纳米线（2）之间的至少一个半导体纳米线（2）和缓冲层（3）。 缓冲层（3）至少部分地由纳米线（2）延伸的过渡金属氮化物层（9）形成，所述过渡金属氮化物选自：氮化钒，氮化铬，氮化锆，氮化铌，钼 氮化物，氮化铪或氮化钽。

公开(公告)号：US20230035764A1

公开(公告)日：2023-02-02

申请号：US17788259

申请日：2020-12-18

Applicant: Aledia

Inventor： Tiphaine Dupont ,  Mehdi Daanoune ,  Olivier Jeannin ,  Ivan-Christophe Robin ,  Florian Dupont

IPC: B23K26/18 ,  B23K26/322

Abstract: A device configured for a laser treatment including a substrate transparent for the laser and objects, each object being bonded to the substrate via a photonic crystal.

公开(公告)号：US09991342B2

公开(公告)日：2018-06-05

申请号：US14438497

申请日：2013-10-25

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

Inventor： Bérangère Hyot ,  Benoit Amstatt ,  Marie-Françoise Armand ,  Florian Dupont

IPC: H01L29/06 ,  H01L21/02 ,  H01L33/04 ,  B82Y10/00 ,  B82Y40/00 ,  C30B25/00 ,  C30B25/18 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B29/60 ,  H01L29/40 ,  H01L29/66 ,  H01L29/41 ,  H01L33/16 ,  H01L33/12 ,  B82Y99/00 ,  H01L33/24

CPC classification number: H01L29/0676 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  C30B25/005 ,  C30B25/183 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B29/406 ,  C30B29/605 ,  H01L21/02104 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L29/401 ,  H01L29/413 ,  H01L29/6609 ,  H01L33/04 ,  H01L33/12 ,  H01L33/16 ,  H01L33/24 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/932

Abstract: The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

公开(公告)号：US20170047477A1

公开(公告)日：2017-02-16

申请号：US15305745

申请日：2015-04-20

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

Inventor： Bérangère Hyot ,  Florian Dupont

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/32

CPC classification number: H01L33/0066 ,  H01L27/15 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/10 ,  H01L33/12 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

Abstract: The optoelectronic device (1) comprises a substrate (2), a light-emitting member (3) comprising an elongate element (4) extending in a direction forming an angle with the substrate (2). An intermediate element (5) is interposed between the substrate (2) and a longitudinal end of the elongate element (4) closest to the substrate (2). Furthermore, the substrate (2) is transparent to said light and the intermediate element (5), transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm.

Abstract translation: 光电子器件（1）包括衬底（2），发光构件（3），其包括在与衬底（2）形成一定角度的方向上延伸的细长元件（4）。 中间元件（5）插入在基板（2）和最靠近基板（2）的细长元件（4）的纵向端之间。 此外，基板（2）对所述光是透明的，对于所述光透明的中间元件（5）包括至少一种过渡金属的氮化物，并且具有小于或等于9nm的厚度。