- Patent Title: Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
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Application No.: US14438497Application Date: 2013-10-25
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Publication No.: US09991342B2Publication Date: 2018-06-05
- Inventor: Bérangère Hyot , Benoit Amstatt , Marie-Françoise Armand , Florian Dupont
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
- Applicant Address: FR Paris FR Grenoble
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,ALEDIA
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,ALEDIA
- Current Assignee Address: FR Paris FR Grenoble
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: FR1260209 20121026
- International Application: PCT/EP2013/072426 WO 20131025
- International Announcement: WO2014/064264 WO 20140501
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L33/04 ; B82Y10/00 ; B82Y40/00 ; C30B25/00 ; C30B25/18 ; C30B29/16 ; C30B29/36 ; C30B29/40 ; C30B29/60 ; H01L29/40 ; H01L29/66 ; H01L29/41 ; H01L33/16 ; H01L33/12 ; B82Y99/00 ; H01L33/24
Abstract:
The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.
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