公开(公告)号：US10937827B2

公开(公告)日：2021-03-02

申请号：US16958142

申请日：2018-11-21

Applicant: ALEDIA

Inventor： Ivan-Christophe Robin ,  Jérôme Napierala

IPC: H01L27/15 ,  H01L33/12 ,  H01L33/00 ,  H01L33/32 ,  H01L33/24

Abstract: A pseudosubstrate for an optoelectronic device suitable for the growth of light-emitting diodes including a substrate and a buffer structure formed on an upper face of the substrate. The buffer structure includes at least one first portion wherein one layer made of solid gallium nitride (GaN) delimits at least one free surface of a first type facing away from the upper face of the substrate, each free surface of the first type being suitable for the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a first wavelength. The buffer structure including at least one second portion wherein a stack alternating layers of indium and gallium nitride (InGaN) and intermediate layers of GaN and in which the indium is present in a first weight ratio, delimits at least one free surface of a second type facing away from the upper face of the substrate, each free surface of the second type being suited to the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a second wavelength different from the first wavelength. The second portion of the buffer structure is offset relative to the first portion of the buffer structure in a general plane (P) oriented parallel to the plane of the upper face of the substrate. Also described is an optoelectronic device and a manufacturing method.

公开(公告)号：US12155006B2

公开(公告)日：2024-11-26

申请号：US17627823

申请日：2020-07-16

Applicant: ALEDIA

Inventor： Jérôme Napierala

IPC: H01L33/02 ,  H01L33/12 ,  H01L33/18 ,  H01L33/24

Abstract: A light emitting diode (LED) having an active region and a three-dimensional (3D) structure. The 3D LED includes a first GaN-based layer having a first content of Aluminium and a first content of Indium, and a second GaN-based layer interposed between and in contact with the first layer and the active region, having a second content of Aluminium and a second content of Indium, the second content of indium being strictly higher than the first content of indium so as to promote the formation of misfit dislocations at an interface between the first and second layers. Advantageously, the active region and the first and second layers extend along semi-polar crystallographic planes. Also described is a method for manufacturing such a 3D LED.

公开(公告)号：US12002841B2

公开(公告)日：2024-06-04

申请号：US17613699

申请日：2020-05-28

Applicant: ALEDIA

Inventor： Florian Dupont ,  Jérôme Napierala

IPC: H01L27/15

CPC classification number: H01L27/15

Abstract: An optoelectronic device includes first and second light-emitting diodes, each LED having: a first semiconductor portion, with a first type of doping, having a wire-like shape along an axis and having side surfaces parallel to this axis; an active portion arranged at least partially on a top end of the first portion; and a second semiconductor portion, with a second type of doping, arranged at least partially on all or part of the active portion. The optoelectronic device further includes an electrically resistive layer having an electrical resistance that is higher than that of the active portion, covering at least all or part of the side surfaces of the first portion and all or part of the surface of the top end of the first portion not covered by the active portion. The resistive layers of the first and second LEDs are separated from one another.

公开(公告)号：US20240105890A1

公开(公告)日：2024-03-28

申请号：US18267417

申请日：2021-12-02

Applicant: Aledia

Inventor： Olga Kryliouk ,  Mehdi Daanoune ,  Jérôme Napierala

IPC: H01L33/58 ,  H01L27/15 ,  H01L33/24

CPC classification number: H01L33/58 ,  H01L27/156 ,  H01L33/24 ,  H01L2933/0083

Abstract: An optoelectronic device including an array of axial light-emitting diodes. The light-emitting diodes each include an active area configured to emit an electromagnetic radiation having an emission spectrum including a maximum at a first wavelength. The array forms a photonic crystal configured to be able to form three resonance peaks amplifying the intensity of said electromagnetic radiation at at least second, third, and fourth wavelengths.

公开(公告)号：US20240063191A1

公开(公告)日：2024-02-22

申请号：US18267074

申请日：2021-12-02

Applicant: Aledia

Inventor： Olga Kryliouk ,  Mehdi Daanoune ,  Jérôme Napierala

IPC: H01L25/075 ,  H01L33/08 ,  H01L33/18 ,  H01L33/10 ,  H01L33/00 ,  H01L33/58

CPC classification number: H01L25/0753 ,  H01L33/08 ,  H01L33/18 ,  H01L33/105 ,  H01L33/0093 ,  H01L33/58 ,  H01L2933/0083

Abstract: An optoelectronic device including an array of axial light-emitting diodes, the light-emitting diodes each including an active area configured to emit an electromagnetic radiation having an emission spectrum comprising a maximum at a first wavelength, the array forming a photonic crystal configured to form a resonance peak amplifying the intensity of said electromagnetic radiation at at least one second wavelength different from the first wavelength.

公开(公告)号：US20240047505A1

公开(公告)日：2024-02-08

申请号：US18267071

申请日：2021-12-15

Applicant: Aledia

Inventor： Mehdi Daanoune ,  Jérôme Napierala ,  Vishnuvarthan Kumaresan ,  Philippe Gilet ,  Marjorie Marra

IPC: H01L27/15 ,  H01L33/18 ,  H01L33/44 ,  H01L33/10 ,  H01L33/00

CPC classification number: H01L27/156 ,  H01L33/18 ,  H01L33/44 ,  H01L33/10 ,  H01L33/0093 ,  H01L2933/0083

Abstract: An optoelectronic device including an array of axial light-emitting diodes (LED), each including an active area configured to emit electromagnetic radiation whose emission spectrum includes a maximum at a first wavelength. The device further includes a cladding for each LED, transparent to said radiation of a first material surrounding the sidewalls of the LED over at least a portion of the LED, each cladding having a thickness greater than 10 nm. The device further comprises layer, between the claddings, transparent to said radiation, made of a second material different from the first material, the second material being electrically insulating, the array forming a photonic crystal.

公开(公告)号：US20220352415A1

公开(公告)日：2022-11-03

申请号：US17621676

申请日：2020-06-22

Applicant: Aledia

Inventor： Olga Kryliouk ,  Jérôme Napierala

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32

Abstract: A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

公开(公告)号：US20220351971A1

公开(公告)日：2022-11-03

申请号：US17621682

申请日：2020-06-26

Applicant: Aledia

Inventor： Florian Dupont ,  Jérôme Napierala

IPC: H01L21/02 ,  H01L29/06

Abstract: A method of manufacturing a device including micrometer- or nanometer-range wires including a III-V compound, including, for each wire, the forming of at least a portion of the wire by a step of metal-organic vapor epitaxy including the injection into a reactor of a first precursor gas of the group-V element, of a second precursor gas of the group-III element, and of a third precursor gas of an additional element, dopant of the III-V compound, of a gas capable of obtaining a dopant concentration greater than 5.1019 atoms/cm3, for example, greater than 1.1020 atoms/cm3, in the wire portion in the case where the portion has a homogeneous dopant concentration.