A light emitting diode (LED) having an active region and a three-dimensional (3D) structure. The 3D LED includes a first GaN-based layer having a first content of Aluminium and a first content of Indium, and a second GaN-based layer interposed between and in contact with the first layer and the active region, having a second content of Aluminium and a second content of Indium, the second content of indium being strictly higher than the first content of indium so as to promote the formation of misfit dislocations at an interface between the first and second layers. Advantageously, the active region and the first and second layers extend along semi-polar crystallographic planes. Also described is a method for manufacturing such a 3D LED.