Component having through-hole plating, and method for its production
    1.
    发明授权
    Component having through-hole plating, and method for its production 有权
    具有通孔电镀的部件及其制造方法

    公开(公告)号:US09035432B2

    公开(公告)日:2015-05-19

    申请号:US13915353

    申请日:2013-06-11

    摘要: A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.

    摘要翻译: 提供了具有带通孔电镀的半导体基板的部件的制造方法,所述贯通电镀被凹部包围,所述半导体基板在一侧具有覆盖所述第一侧的所述凹部的第一层。 半导体衬底在第二侧上具有覆盖第二侧的凹部的第二层,并且通孔电镀被由半导体衬底产生的环形结构包围。 围绕环结构的凹部在相同的工艺步骤中或与用于通孔电镀的凹槽同时产生。

    Method for manufacturing a component having an electrical through-connection
    3.
    发明授权
    Method for manufacturing a component having an electrical through-connection 有权
    用于制造具有电贯通连接的部件的方法

    公开(公告)号:US09114978B2

    公开(公告)日:2015-08-25

    申请号:US13921419

    申请日:2013-06-19

    摘要: A method for manufacturing a component having an electrical through-connection includes: providing a semiconductor substrate having a front side and a back side opposite from the front side; producing, on the front side of the semiconductor substrate, an insulating trench which annularly surrounds a contact area; introducing an insulating material into the insulating trench; producing a contact hole on the front side of the semiconductor substrate by removing the semiconductor material surrounded by the insulating trench in the contact area; and depositing a metallic material in the contact hole.

    摘要翻译: 一种用于制造具有电穿通连接的部件的方法包括:提供具有前侧和与前侧相对的后侧的半导体衬底; 在所述半导体衬底的前侧产生环形地围绕接触区域的绝缘沟槽; 将绝缘材料引入绝缘沟槽中; 通过去除由接触区域中的绝缘沟槽围绕的半导体材料,在半导体衬底的正面上产生接触孔; 以及在所述接触孔中沉积金属材料。

    MEMS structural component including a deflectable diaphragm and a fixed counter-element as well as a method for manufacturing it
    4.
    发明申请
    MEMS structural component including a deflectable diaphragm and a fixed counter-element as well as a method for manufacturing it 有权
    MEMS结构部件包括可偏转的膜片和固定的相对元件以及其制造方法

    公开(公告)号:US20150001653A1

    公开(公告)日:2015-01-01

    申请号:US14314624

    申请日:2014-06-25

    IPC分类号: B81C1/00 B81B3/00

    摘要: For simplifying the manufacture of a MEMS structural component including a deflectable diaphragm which spans an opening in the rear side of the structural component, and including a fixed counter-element, which is provided with passage openings, the counter-element from the base substrate of the MEMS structural component is patterned and the deflectable diaphragm is implemented in a layered structure on the base substrate. These measures are intended to improve the diaphragm properties and reduce the overall height of the MEMS structural component.

    摘要翻译: 为了简化MEMS结构部件的制造,该MEMS结构部件包括跨越结构部件的后侧的开口的可偏转隔膜,并且包括设置有通道开口的固定的相对元件,来自基底基板的相对元件 MEMS结构部件被图案化,并且可偏转膜片以基底衬底上的分层结构实现。 这些措施旨在改善隔膜性能并降低MEMS结构部件的整体高度。

    Hybrid integrated component and method for the manufacture thereof
    5.
    发明授权
    Hybrid integrated component and method for the manufacture thereof 有权
    混合集成组件及其制造方法

    公开(公告)号:US08836053B2

    公开(公告)日:2014-09-16

    申请号:US13890450

    申请日:2013-05-09

    IPC分类号: H01L29/84 B81B3/00 B81C1/00

    摘要: A component system includes at least one MEMS element, a cap for a micromechanical structure of the MEMS element, and at least one ASIC substrate. The micromechanical structure of the MEMS element is implemented in the functional layer of an SOI wafer. The MEMS element is mounted face down, with the structured functional layer on the ASIC substrate, and the cap is implemented in the substrate of the SOI wafer. The ASIC substrate includes a starting substrate provided with a layered structure on both sides. At least one circuit level is implemented in each case both in the MEMS-side layered structure and in the rear-side layered structure of the ASIC substrate. In the ASIC substrate, at least one ASIC through contact is implemented which electrically contacts at least one circuit level of the rear-side layered structure and/or at least one circuit level of the MEMS-side layered structure.

    摘要翻译: 组件系统包括至少一个MEMS元件,用于MEMS元件的微机械结构的盖以及至少一个ASIC基板。 MEMS元件的微机械结构在SOI晶片的功能层中实现。 MEMS元件面朝下安装,ASIC结构上的结构化功能层,并且帽被实现在SOI晶片的衬底中。 ASIC基板包括在两侧设置有分层结构的起始衬底。 在ASIC基板的MEMS侧分层结构和后侧层叠结构中,每种情况都至少实现一个电路电平。 在ASIC基板中,实现至少一个ASIC接触,其电接触后侧分层结构的至少一个电路电平和/或MEMS侧分层结构的至少一个电路电平。

    Method for producing an electrical feedthrough in a substrate, and a substrate having an electrical feedthrough
    6.
    发明授权
    Method for producing an electrical feedthrough in a substrate, and a substrate having an electrical feedthrough 有权
    在基板中制造电馈通的方法,以及具有电馈通的基板

    公开(公告)号:US08741774B2

    公开(公告)日:2014-06-03

    申请号:US13659030

    申请日:2012-10-24

    摘要: A method for producing an electrical feedthrough in a substrate includes: forming a first printed conductor on a first side of a substrate which electrically connects a first contact area of the substrate on the first side; forming a second printed conductor on a second side of a substrate which electrically connects a second contact area of the substrate on the second side; forming an annular trench in the substrate, a substrate punch being formed which extends from the first contact area to the second contact area; and selectively depositing an electrically conductive layer on an inner surface of the annular trench, the substrate punch being coated with an electrically conductive layer and remaining electrically insulated from the surrounding substrate due to the annular trench.

    摘要翻译: 一种用于在基板中制造电馈通的方法包括:在基板的第一侧上形成第一印刷导体,该第一印刷导体电连接第一侧上的基板的第一接触区域; 在基板的第二侧上形成第二印刷导体,所述第二印刷导体电连接所述第二侧上的所述基板的第二接触区域; 在所述衬底中形成环形沟槽,形成从所述第一接触区域延伸到所述第二接触区域的衬底冲头; 以及在所述环形沟槽的内表面上选择性地沉积导电层,所述衬底冲头涂覆有导电层,并且由于所述环形沟槽而与所述周围衬底保持电绝缘。

    COMPONENT HAVING THROUGH-HOLE PLATING, AND METHOD FOR ITS PRODUCTION
    7.
    发明申请
    COMPONENT HAVING THROUGH-HOLE PLATING, AND METHOD FOR ITS PRODUCTION 有权
    具有贯通孔镀层的部件及其制造方法

    公开(公告)号:US20130341766A1

    公开(公告)日:2013-12-26

    申请号:US13915353

    申请日:2013-06-11

    IPC分类号: H01L23/48 H01L21/768

    摘要: A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.

    摘要翻译: 提供了具有带通孔电镀的半导体基板的部件的制造方法,所述贯通电镀被凹部包围,所述半导体基板在一侧具有覆盖所述第一侧的所述凹部的第一层。 半导体衬底在第二侧上具有覆盖第二侧的凹部的第二层,并且通孔电镀被由半导体衬底产生的环形结构包围。 围绕环结构的凹部在相同的工艺步骤中或与用于通孔电镀的凹槽同时产生。

    Component having a through-connection
    9.
    发明授权
    Component having a through-connection 有权
    具有通过连接的部件

    公开(公告)号:US08778194B2

    公开(公告)日:2014-07-15

    申请号:US13744611

    申请日:2013-01-18

    IPC分类号: H01L21/302

    摘要: A method is described for manufacturing a component having a through-connection. The method includes providing a substrate; forming a trench structure in the substrate, a substrate area which is completely surrounded by the trench structure being produced; forming a closing layer for closing off the trench structure, a cavity girded by the closing layer being formed in the area of the trench structure; removing substrate material from the substrate area surrounded by the closed-off trench structure; and at least partially filling the substrate area surrounded by the closed-off trench structure with a metallic material. A component having a through-connection is also described.

    摘要翻译: 描述了用于制造具有贯通连接的部件的方法。 该方法包括提供基板; 在衬底中形成沟槽结构,被正被制造的沟槽结构完全包围的衬底区域; 形成用于封闭所述沟槽结构的封闭层,由所述封闭层围绕的腔体形成在所述沟槽结构的区域中; 从由封闭沟槽结构包围的衬底区域中去除衬底材料; 并且用金属材料至少部分地填充由封闭沟槽结构包围的衬底区域。 还描述了具有贯通连接的部件。